CN102143330A - 摄像器件,半导体装置及摄像方法 - Google Patents

摄像器件,半导体装置及摄像方法 Download PDF

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Publication number
CN102143330A
CN102143330A CN2010106073262A CN201010607326A CN102143330A CN 102143330 A CN102143330 A CN 102143330A CN 2010106073262 A CN2010106073262 A CN 2010106073262A CN 201010607326 A CN201010607326 A CN 201010607326A CN 102143330 A CN102143330 A CN 102143330A
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CN
China
Prior art keywords
line
ccd
transmission
signal
lines
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Pending
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CN2010106073262A
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English (en)
Chinese (zh)
Inventor
吴田昌俊
新井正敏
江藤刚治
江藤九重
秋浓俊昭
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Kinki University Nishikawa
Japan Atomic Energy Agency
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Kinki University Nishikawa
Japan Atomic Energy Agency
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Application filed by Kinki University Nishikawa, Japan Atomic Energy Agency filed Critical Kinki University Nishikawa
Publication of CN102143330A publication Critical patent/CN102143330A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/622—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by controlling anti-blooming drains
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80377—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)
CN2010106073262A 2009-12-25 2010-12-27 摄像器件,半导体装置及摄像方法 Pending CN102143330A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009294755 2009-12-25
JP2009-294755 2009-12-25

Publications (1)

Publication Number Publication Date
CN102143330A true CN102143330A (zh) 2011-08-03

Family

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Family Applications (1)

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CN2010106073262A Pending CN102143330A (zh) 2009-12-25 2010-12-27 摄像器件,半导体装置及摄像方法

Country Status (4)

Country Link
US (1) US8576319B2 (enExample)
JP (1) JP5105453B2 (enExample)
CN (1) CN102143330A (enExample)
GB (1) GB2477187A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103594480A (zh) * 2013-12-02 2014-02-19 中国电子科技集团公司第四十四研究所 具备信号电荷选择功能的ccd像元结构
CN108496361A (zh) * 2015-11-17 2018-09-04 微软技术许可有限责任公司 多模式光电传感器

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012127772A1 (ja) * 2011-03-24 2012-09-27 パナソニック株式会社 固体撮像素子および当該素子を備える撮像装置
JP6188679B2 (ja) * 2012-02-29 2017-08-30 江藤　剛治 固体撮像装置
DE102014013099B4 (de) 2014-09-03 2019-11-14 Basler Aktiengesellschaft Verfahren und Vorrichtung zur vereinfachten Erfassung eines Tiefenbildes
CN113038121B (zh) * 2021-03-09 2022-08-16 湘潭大学 中子辐照后电荷耦合器件暗信号的原位测量系统及方法

Citations (4)

* Cited by examiner, † Cited by third party
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US4811068A (en) * 1983-07-27 1989-03-07 Canon Kabushiki Kaisha Charge transfer device
EP1265292A2 (en) * 2001-06-04 2002-12-11 Isetex, Inc. Charge multiplier with logarithmic dynamic range compression implemented in charge domain
JP2007028520A (ja) * 2005-07-21 2007-02-01 Fujifilm Holdings Corp デジタルカメラ
JP2007274174A (ja) * 2006-03-30 2007-10-18 Fujifilm Corp 固体撮像装置および駆動方法

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JPS60163464A (ja) * 1984-02-02 1985-08-26 Fujitsu Ltd 電荷結合装置
JPS60202962A (ja) * 1984-03-28 1985-10-14 Fujitsu Ltd 電荷結合装置
JPS6354879A (ja) * 1986-08-25 1988-03-09 Omron Tateisi Electronics Co 静止画撮像カメラ
US4897728A (en) * 1987-10-09 1990-01-30 Kabushiki Kaisha Toshiba Charge transfer device for solid state image pickup apparatus and method of driving the same
JP2504845B2 (ja) * 1989-10-06 1996-06-05 シャープ株式会社 固体撮像装置
DE69320839T2 (de) * 1992-01-31 1999-03-04 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Verfahren zur Ladungsübertragung, Ladungsübertragungsvorrichtung und Festkörperbildaufnahmevorrichtung zur Anwendung derselben
JP3436281B2 (ja) 1994-12-28 2003-08-11 ソニー株式会社 固体撮像装置
JPH09270504A (ja) * 1996-03-29 1997-10-14 Toshiba Microelectron Corp 固体撮像装置
JPH10243284A (ja) * 1997-02-25 1998-09-11 Toshiba Microelectron Corp 固体撮像装置並びにこれを用いた自動焦点調整装置及び撮像システム
JP3710656B2 (ja) * 1999-09-07 2005-10-26 東芝マイクロエレクトロニクス株式会社 固体撮像装置および距離測定装置
JP3704052B2 (ja) 2000-03-28 2005-10-05 リンク・リサーチ株式会社 高速撮像素子及び高速撮影装置
JP2002252338A (ja) * 2000-12-18 2002-09-06 Canon Inc 撮像装置及び撮像システム
JP4390096B2 (ja) * 2001-07-06 2009-12-24 富士フイルム株式会社 内視鏡装置
US7432971B2 (en) * 2002-06-21 2008-10-07 Shimadzu Corporation In-situ storage image sensor and in-situ storage image pickup apparatus
JP4265295B2 (ja) * 2002-06-21 2009-05-20 株式会社島津製作所 撮像素子および撮像装置
JP2004103785A (ja) * 2002-09-09 2004-04-02 Fuji Film Microdevices Co Ltd 固体撮像素子
JP2006121650A (ja) * 2004-09-24 2006-05-11 Fuji Photo Film Co Ltd 固体撮像装置
US7855742B2 (en) * 2006-03-30 2010-12-21 Fujifilm Corporation Solid state imaging device with horizontal transfer paths and a driving method therefor
JP2009065478A (ja) * 2007-09-06 2009-03-26 Fujifilm Corp 固体撮像素子の駆動方法及び撮像装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4811068A (en) * 1983-07-27 1989-03-07 Canon Kabushiki Kaisha Charge transfer device
EP1265292A2 (en) * 2001-06-04 2002-12-11 Isetex, Inc. Charge multiplier with logarithmic dynamic range compression implemented in charge domain
JP2007028520A (ja) * 2005-07-21 2007-02-01 Fujifilm Holdings Corp デジタルカメラ
JP2007274174A (ja) * 2006-03-30 2007-10-18 Fujifilm Corp 固体撮像装置および駆動方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103594480A (zh) * 2013-12-02 2014-02-19 中国电子科技集团公司第四十四研究所 具备信号电荷选择功能的ccd像元结构
CN108496361A (zh) * 2015-11-17 2018-09-04 微软技术许可有限责任公司 多模式光电传感器
CN108496361B (zh) * 2015-11-17 2020-12-08 微软技术许可有限责任公司 一种多模式光电传感器及相机

Also Published As

Publication number Publication date
GB2477187A (en) 2011-07-27
US20110157448A1 (en) 2011-06-30
US8576319B2 (en) 2013-11-05
JP5105453B2 (ja) 2012-12-26
JP2011151797A (ja) 2011-08-04
GB201022024D0 (en) 2011-02-02

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Application publication date: 20110803