JP5105453B2 - 撮像素子、半導体装置、及び撮像方法、撮像装置 - Google Patents

撮像素子、半導体装置、及び撮像方法、撮像装置 Download PDF

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Publication number
JP5105453B2
JP5105453B2 JP2010286019A JP2010286019A JP5105453B2 JP 5105453 B2 JP5105453 B2 JP 5105453B2 JP 2010286019 A JP2010286019 A JP 2010286019A JP 2010286019 A JP2010286019 A JP 2010286019A JP 5105453 B2 JP5105453 B2 JP 5105453B2
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Japan
Prior art keywords
transfer
ccd
imaging
transfer stage
signal
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Expired - Fee Related
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JP2010286019A
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English (en)
Japanese (ja)
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JP2011151797A5 (enExample
JP2011151797A (ja
Inventor
昌俊 呉田
正敏 新井
剛治 江藤
九重 江藤
俊昭 秋濃
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Japan Atomic Energy Agency
Kindai University
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Japan Atomic Energy Agency
Kindai University
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Priority to JP2010286019A priority Critical patent/JP5105453B2/ja
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Publication of JP2011151797A5 publication Critical patent/JP2011151797A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/622—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by controlling anti-blooming drains
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80377—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)
JP2010286019A 2009-12-25 2010-12-22 撮像素子、半導体装置、及び撮像方法、撮像装置 Expired - Fee Related JP5105453B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010286019A JP5105453B2 (ja) 2009-12-25 2010-12-22 撮像素子、半導体装置、及び撮像方法、撮像装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009294755 2009-12-25
JP2009294755 2009-12-25
JP2010286019A JP5105453B2 (ja) 2009-12-25 2010-12-22 撮像素子、半導体装置、及び撮像方法、撮像装置

Publications (3)

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JP2011151797A JP2011151797A (ja) 2011-08-04
JP2011151797A5 JP2011151797A5 (enExample) 2012-07-12
JP5105453B2 true JP5105453B2 (ja) 2012-12-26

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JP2010286019A Expired - Fee Related JP5105453B2 (ja) 2009-12-25 2010-12-22 撮像素子、半導体装置、及び撮像方法、撮像装置

Country Status (4)

Country Link
US (1) US8576319B2 (enExample)
JP (1) JP5105453B2 (enExample)
CN (1) CN102143330A (enExample)
GB (1) GB2477187A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012127772A1 (ja) * 2011-03-24 2012-09-27 パナソニック株式会社 固体撮像素子および当該素子を備える撮像装置
JP6188679B2 (ja) * 2012-02-29 2017-08-30 江藤　剛治 固体撮像装置
CN103594480A (zh) * 2013-12-02 2014-02-19 中国电子科技集团公司第四十四研究所 具备信号电荷选择功能的ccd像元结构
DE102014013099B4 (de) 2014-09-03 2019-11-14 Basler Aktiengesellschaft Verfahren und Vorrichtung zur vereinfachten Erfassung eines Tiefenbildes
US9979905B2 (en) 2015-11-17 2018-05-22 Microsoft Technology Licensing, Llc. Multimode photosensor
CN113038121B (zh) * 2021-03-09 2022-08-16 湘潭大学 中子辐照后电荷耦合器件暗信号的原位测量系统及方法

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JPS6028265A (ja) * 1983-07-27 1985-02-13 Canon Inc 電荷転送デバイス
JPS60163464A (ja) * 1984-02-02 1985-08-26 Fujitsu Ltd 電荷結合装置
JPS60202962A (ja) * 1984-03-28 1985-10-14 Fujitsu Ltd 電荷結合装置
JPS6354879A (ja) * 1986-08-25 1988-03-09 Omron Tateisi Electronics Co 静止画撮像カメラ
US4897728A (en) * 1987-10-09 1990-01-30 Kabushiki Kaisha Toshiba Charge transfer device for solid state image pickup apparatus and method of driving the same
JP2504845B2 (ja) * 1989-10-06 1996-06-05 シャープ株式会社 固体撮像装置
DE69320839T2 (de) * 1992-01-31 1999-03-04 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Verfahren zur Ladungsübertragung, Ladungsübertragungsvorrichtung und Festkörperbildaufnahmevorrichtung zur Anwendung derselben
JP3436281B2 (ja) 1994-12-28 2003-08-11 ソニー株式会社 固体撮像装置
JPH09270504A (ja) * 1996-03-29 1997-10-14 Toshiba Microelectron Corp 固体撮像装置
JPH10243284A (ja) * 1997-02-25 1998-09-11 Toshiba Microelectron Corp 固体撮像装置並びにこれを用いた自動焦点調整装置及び撮像システム
JP3710656B2 (ja) * 1999-09-07 2005-10-26 東芝マイクロエレクトロニクス株式会社 固体撮像装置および距離測定装置
JP3704052B2 (ja) 2000-03-28 2005-10-05 リンク・リサーチ株式会社 高速撮像素子及び高速撮影装置
JP2002252338A (ja) * 2000-12-18 2002-09-06 Canon Inc 撮像装置及び撮像システム
US7190400B2 (en) * 2001-06-04 2007-03-13 Texas Instruments Incorporated Charge multiplier with logarithmic dynamic range compression implemented in charge domain
JP4390096B2 (ja) * 2001-07-06 2009-12-24 富士フイルム株式会社 内視鏡装置
US7432971B2 (en) * 2002-06-21 2008-10-07 Shimadzu Corporation In-situ storage image sensor and in-situ storage image pickup apparatus
JP4265295B2 (ja) * 2002-06-21 2009-05-20 株式会社島津製作所 撮像素子および撮像装置
JP2004103785A (ja) * 2002-09-09 2004-04-02 Fuji Film Microdevices Co Ltd 固体撮像素子
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JP4634953B2 (ja) * 2006-03-30 2011-02-16 富士フイルム株式会社 固体撮像装置および駆動方法
US7855742B2 (en) * 2006-03-30 2010-12-21 Fujifilm Corporation Solid state imaging device with horizontal transfer paths and a driving method therefor
JP2009065478A (ja) * 2007-09-06 2009-03-26 Fujifilm Corp 固体撮像素子の駆動方法及び撮像装置

Also Published As

Publication number Publication date
GB2477187A (en) 2011-07-27
CN102143330A (zh) 2011-08-03
US20110157448A1 (en) 2011-06-30
US8576319B2 (en) 2013-11-05
JP2011151797A (ja) 2011-08-04
GB201022024D0 (en) 2011-02-02

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