GB2423635B - Method for preventing an increase in contact hole width during contact formation - Google Patents

Method for preventing an increase in contact hole width during contact formation

Info

Publication number
GB2423635B
GB2423635B GB0608285A GB0608285A GB2423635B GB 2423635 B GB2423635 B GB 2423635B GB 0608285 A GB0608285 A GB 0608285A GB 0608285 A GB0608285 A GB 0608285A GB 2423635 B GB2423635 B GB 2423635B
Authority
GB
United Kingdom
Prior art keywords
preventing
increase
hole width
width during
contact hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0608285A
Other languages
English (en)
Other versions
GB2423635A (en
GB0608285D0 (en
Inventor
Dawn M Hopper
Hiroyuki Kinoshita
Christy Woo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of GB0608285D0 publication Critical patent/GB0608285D0/en
Publication of GB2423635A publication Critical patent/GB2423635A/en
Application granted granted Critical
Publication of GB2423635B publication Critical patent/GB2423635B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/034—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics bottomless barrier, adhesion or liner layers
    • H01L21/76802—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/054—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by selectively removing parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
GB0608285A 2003-11-08 2004-10-08 Method for preventing an increase in contact hole width during contact formation Expired - Fee Related GB2423635B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/705,631 US7005387B2 (en) 2003-11-08 2003-11-08 Method for preventing an increase in contact hole width during contact formation
PCT/US2004/033417 WO2005048342A1 (en) 2003-11-08 2004-10-08 Method for preventing an increase in contact hole width during contact formation

Publications (3)

Publication Number Publication Date
GB0608285D0 GB0608285D0 (en) 2006-06-07
GB2423635A GB2423635A (en) 2006-08-30
GB2423635B true GB2423635B (en) 2007-05-30

Family

ID=34552414

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0608285A Expired - Fee Related GB2423635B (en) 2003-11-08 2004-10-08 Method for preventing an increase in contact hole width during contact formation

Country Status (8)

Country Link
US (1) US7005387B2 (https=)
JP (1) JP4662943B2 (https=)
KR (1) KR101180977B1 (https=)
CN (1) CN1883045A (https=)
DE (1) DE112004002156T5 (https=)
GB (1) GB2423635B (https=)
TW (1) TWI359475B (https=)
WO (1) WO2005048342A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080038910A1 (en) * 2006-08-10 2008-02-14 Advanced Micro Devices, Inc. Multiple lithography for reduced negative feature corner rounding
US20090050471A1 (en) * 2007-08-24 2009-02-26 Spansion Llc Process of forming an electronic device including depositing layers within openings
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
JP6494940B2 (ja) * 2013-07-25 2019-04-03 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 異なるサイズのフィーチャへのボイドフリータングステン充填
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
KR102607331B1 (ko) * 2018-07-13 2023-11-29 에스케이하이닉스 주식회사 고종횡비 구조를 위한 갭필 방법 및 그를 이용한 반도체장치 제조 방법
CN116259575A (zh) * 2022-09-07 2023-06-13 上海华力集成电路制造有限公司 钨填充工艺的改善方法
CN119452753A (zh) 2023-01-05 2025-02-14 富士电机株式会社 半导体装置及其制造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0661181A (ja) * 1992-08-11 1994-03-04 Sony Corp バリアメタルの形成方法
US6204550B1 (en) * 1997-11-21 2001-03-20 Lsi Logic Corporation Method and composition for reducing gate oxide damage during RF sputter clean
EP1233448A2 (en) * 2001-02-14 2002-08-21 Texas Instruments Inc. Reliable interconnects with low via/contact resistance
US6498091B1 (en) * 2000-11-01 2002-12-24 Applied Materials, Inc. Method of using a barrier sputter reactor to remove an underlying barrier layer
US6511575B1 (en) * 1998-11-12 2003-01-28 Canon Kabushiki Kaisha Treatment apparatus and method utilizing negative hydrogen ion
US20030073304A1 (en) * 2001-10-16 2003-04-17 Applied Materials, Inc. Selective tungsten stud as copper diffusion barrier to silicon contact

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0513411A (ja) * 1991-07-02 1993-01-22 Nec Corp 半導体装置の製造方法
JP3237917B2 (ja) * 1992-09-22 2001-12-10 沖電気工業株式会社 半導体素子の製造方法
JPH06349824A (ja) * 1993-06-10 1994-12-22 Toshiba Corp 半導体装置の製造方法
JPH09116009A (ja) * 1995-10-23 1997-05-02 Sony Corp 接続孔の形成方法
JPH09139358A (ja) * 1995-11-13 1997-05-27 Sony Corp 半導体装置の製造方法
US5985762A (en) * 1997-05-19 1999-11-16 International Business Machines Corporation Method of forming a self-aligned copper diffusion barrier in vias
TW388095B (en) * 1997-05-20 2000-04-21 United Microelectronics Corp Method for improving planarization of dielectric layer in interconnect metal process
JP3201318B2 (ja) * 1997-11-05 2001-08-20 日本電気株式会社 半導体装置の製造方法
US6303505B1 (en) * 1998-07-09 2001-10-16 Advanced Micro Devices, Inc. Copper interconnect with improved electromigration resistance
KR100277086B1 (ko) * 1999-01-02 2000-12-15 윤종용 반도체 장치 및 그 제조 방법
JP4221859B2 (ja) * 1999-02-12 2009-02-12 株式会社デンソー 半導体装置の製造方法
US6348709B1 (en) * 1999-03-15 2002-02-19 Micron Technology, Inc. Electrical contact for high dielectric constant capacitors and method for fabricating the same
JP2000323571A (ja) * 1999-05-14 2000-11-24 Sony Corp 半導体装置の製造方法
KR100316721B1 (ko) * 2000-01-29 2001-12-12 윤종용 실리사이드막을 구비한 반도체소자의 제조방법
KR20010077743A (ko) * 2000-02-08 2001-08-20 박종섭 비트 라인 및 그 제조 방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0661181A (ja) * 1992-08-11 1994-03-04 Sony Corp バリアメタルの形成方法
US6204550B1 (en) * 1997-11-21 2001-03-20 Lsi Logic Corporation Method and composition for reducing gate oxide damage during RF sputter clean
US6511575B1 (en) * 1998-11-12 2003-01-28 Canon Kabushiki Kaisha Treatment apparatus and method utilizing negative hydrogen ion
US6498091B1 (en) * 2000-11-01 2002-12-24 Applied Materials, Inc. Method of using a barrier sputter reactor to remove an underlying barrier layer
EP1233448A2 (en) * 2001-02-14 2002-08-21 Texas Instruments Inc. Reliable interconnects with low via/contact resistance
US20030073304A1 (en) * 2001-10-16 2003-04-17 Applied Materials, Inc. Selective tungsten stud as copper diffusion barrier to silicon contact

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 018, no. 290 (E-1557), 2 June 1994 (1994-06-02) & JP 06061181 A (SONY CORP), 4 March 1994 (1994-03-04) *

Also Published As

Publication number Publication date
GB2423635A (en) 2006-08-30
US20050101148A1 (en) 2005-05-12
JP4662943B2 (ja) 2011-03-30
WO2005048342A1 (en) 2005-05-26
GB0608285D0 (en) 2006-06-07
TWI359475B (en) 2012-03-01
CN1883045A (zh) 2006-12-20
DE112004002156T5 (de) 2006-09-14
KR101180977B1 (ko) 2012-09-07
JP2007511087A (ja) 2007-04-26
US7005387B2 (en) 2006-02-28
TW200524077A (en) 2005-07-16
KR20060107763A (ko) 2006-10-16

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20091210 AND 20091216

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20111008