GB2373867B - Chemical amplification type positive resist composition - Google Patents

Chemical amplification type positive resist composition

Info

Publication number
GB2373867B
GB2373867B GB0207099A GB0207099A GB2373867B GB 2373867 B GB2373867 B GB 2373867B GB 0207099 A GB0207099 A GB 0207099A GB 0207099 A GB0207099 A GB 0207099A GB 2373867 B GB2373867 B GB 2373867B
Authority
GB
United Kingdom
Prior art keywords
resist composition
positive resist
chemical amplification
type positive
amplification type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0207099A
Other languages
English (en)
Other versions
GB0207099D0 (en
GB2373867A (en
Inventor
Kunihiro Ichimura
Tsugio Okudaira
Masumi Suetsugu
Yasunori Uetani
Katsuhiko Namba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Publication of GB0207099D0 publication Critical patent/GB0207099D0/en
Publication of GB2373867A publication Critical patent/GB2373867A/en
Application granted granted Critical
Publication of GB2373867B publication Critical patent/GB2373867B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
GB0207099A 2001-03-28 2002-03-26 Chemical amplification type positive resist composition Expired - Fee Related GB2373867B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001092325A JP4514978B2 (ja) 2001-03-28 2001-03-28 化学増幅型ポジ型レジスト組成物

Publications (3)

Publication Number Publication Date
GB0207099D0 GB0207099D0 (en) 2002-05-08
GB2373867A GB2373867A (en) 2002-10-02
GB2373867B true GB2373867B (en) 2003-03-26

Family

ID=18946805

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0207099A Expired - Fee Related GB2373867B (en) 2001-03-28 2002-03-26 Chemical amplification type positive resist composition

Country Status (7)

Country Link
US (1) US6696218B2 (fr)
JP (1) JP4514978B2 (fr)
KR (1) KR100842237B1 (fr)
BE (1) BE1014725A3 (fr)
DE (1) DE10213523A1 (fr)
GB (1) GB2373867B (fr)
TW (1) TWI296740B (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7192681B2 (en) * 2001-07-05 2007-03-20 Fuji Photo Film Co., Ltd. Positive photosensitive composition
KR20030034292A (ko) * 2001-10-18 2003-05-09 주식회사 한국케믹스 화학증폭형 포지티브 레지스트 조성물
JP4493938B2 (ja) * 2003-06-06 2010-06-30 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
JP4830442B2 (ja) * 2005-10-19 2011-12-07 Ｊｓｒ株式会社 ポジ型感放射線性樹脂組成物
JP4905250B2 (ja) * 2007-05-18 2012-03-28 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP5141106B2 (ja) * 2007-06-22 2013-02-13 住友化学株式会社 化学増幅型ポジ型レジスト組成物及びヒドロキシスチレン誘導体
JP4998112B2 (ja) * 2007-06-27 2012-08-15 住友化学株式会社 化学増幅型ポジ型レジスト組成物
WO2011077993A1 (fr) * 2009-12-22 2011-06-30 Jsr株式会社 Composition sensible aux rayonnements
CN102781911B (zh) 2010-02-24 2015-07-22 巴斯夫欧洲公司 潜酸及其用途
EP3253735B1 (fr) 2015-02-02 2021-03-31 Basf Se Acides latents et leur utilisation

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2577417B2 (ja) 1988-01-07 1997-01-29 旭電化工業株式会社 感熱記録体
JPH0470381A (ja) 1990-06-30 1992-03-05 Kanzaki Paper Mfg Co Ltd 感熱記録体
JP2994048B2 (ja) 1990-12-18 1999-12-27 旭電化工業株式会社 熱発色性材料
US5159057A (en) * 1992-02-25 1992-10-27 Eastman Kodak Company Method for the preparation of aromatic polyesters
KR100206664B1 (ko) * 1995-06-28 1999-07-01 세키사와 다다시 화학증폭형 레지스트 조성물 및 레지스트 패턴의 형성방법
ATE199985T1 (de) * 1996-02-09 2001-04-15 Wako Pure Chem Ind Ltd Polymer und resistmaterial
KR100219573B1 (ko) * 1996-08-05 1999-09-01 윤종용 감광성 고분자 화합물 및 이를 포함하는 포토레지스트 조성물
TW546540B (en) 1997-04-30 2003-08-11 Wako Pure Chem Ind Ltd An agent for reducing the substrate dependence of resist and a resist composition
JP3702590B2 (ja) * 1997-07-11 2005-10-05 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP3785846B2 (ja) * 1999-02-05 2006-06-14 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP3662774B2 (ja) * 1999-06-02 2005-06-22 東京応化工業株式会社 ポジ型レジスト組成物
JP3102640B1 (ja) * 1999-08-13 2000-10-23 戸田工業株式会社 エネルギー線硬化性樹脂組成物、エネルギー線硬化性樹脂組成物の硬化方法、及び、エネルギー線硬化性樹脂成形品
JP2002062641A (ja) * 2000-08-15 2002-02-28 Nippon Kemikkusu:Kk 感活性エネルギー線樹脂組成物、及び、該樹脂組成物を用いてなる高分子パターンの形成方法
KR20030034292A (ko) * 2001-10-18 2003-05-09 주식회사 한국케믹스 화학증폭형 포지티브 레지스트 조성물

Also Published As

Publication number Publication date
DE10213523A1 (de) 2002-10-24
TWI296740B (en) 2008-05-11
BE1014725A3 (fr) 2004-03-02
KR100842237B1 (ko) 2008-06-30
GB0207099D0 (en) 2002-05-08
JP4514978B2 (ja) 2010-07-28
GB2373867A (en) 2002-10-02
KR20020077085A (ko) 2002-10-11
US6696218B2 (en) 2004-02-24
JP2002287362A (ja) 2002-10-03
US20030013038A1 (en) 2003-01-16

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20150326