GB2365215A - Composite diffusion barrier for protecting copper interconnects in low dielectric constant materials from oxidation - Google Patents

Composite diffusion barrier for protecting copper interconnects in low dielectric constant materials from oxidation Download PDF

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Publication number
GB2365215A
GB2365215A GB0101254A GB0101254A GB2365215A GB 2365215 A GB2365215 A GB 2365215A GB 0101254 A GB0101254 A GB 0101254A GB 0101254 A GB0101254 A GB 0101254A GB 2365215 A GB2365215 A GB 2365215A
Authority
GB
United Kingdom
Prior art keywords
copper
insulator
forming
recited
diffusion barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0101254A
Other languages
English (en)
Other versions
GB0101254D0 (en
Inventor
Vincent James Mcgahay
Ernest Levine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB0101254D0 publication Critical patent/GB0101254D0/en
Publication of GB2365215A publication Critical patent/GB2365215A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
GB0101254A 2000-03-23 2001-01-18 Composite diffusion barrier for protecting copper interconnects in low dielectric constant materials from oxidation Withdrawn GB2365215A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US53385100A 2000-03-23 2000-03-23

Publications (2)

Publication Number Publication Date
GB0101254D0 GB0101254D0 (en) 2001-02-28
GB2365215A true GB2365215A (en) 2002-02-13

Family

ID=24127691

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0101254A Withdrawn GB2365215A (en) 2000-03-23 2001-01-18 Composite diffusion barrier for protecting copper interconnects in low dielectric constant materials from oxidation

Country Status (5)

Country Link
JP (1) JP2001313296A (ko)
KR (1) KR20010092679A (ko)
CN (1) CN1319891A (ko)
GB (1) GB2365215A (ko)
TW (1) TW478101B (ko)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2387027A (en) * 2002-01-02 2003-10-01 Agere Systems Inc Split barrier layer including nitrogen-containing portion and oxygen-containing portion
WO2006048823A1 (en) * 2004-11-08 2006-05-11 Koninklijke Philips Electronics N.V. Planarising damascene structures
US7335990B2 (en) 2004-04-27 2008-02-26 Agency For Science, Technology And Research Process of forming a composite diffusion barrier in copper/organic low-k damascene technology
US7698012B2 (en) 2001-06-19 2010-04-13 Applied Materials, Inc. Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing
US7966087B2 (en) 2002-11-15 2011-06-21 Applied Materials, Inc. Method, system and medium for controlling manufacture process having multivariate input parameters
US8070909B2 (en) 2001-06-19 2011-12-06 Applied Materials, Inc. Feedback control of chemical mechanical polishing device providing manipulation of removal rate profiles
US8504620B2 (en) 2000-11-30 2013-08-06 Applied Materials, Inc. Dynamic subject information generation in message services of distributed object systems
US8884441B2 (en) 2013-02-18 2014-11-11 Taiwan Semiconductor Manufacturing Co., Ltd. Process of ultra thick trench etch with multi-slope profile

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3648480B2 (ja) * 2001-12-26 2005-05-18 株式会社東芝 半導体装置およびその製造方法
JP4266901B2 (ja) * 2003-09-30 2009-05-27 三洋電機株式会社 半導体装置およびその製造方法
US9368448B2 (en) * 2013-12-20 2016-06-14 Applied Materials, Inc. Metal-containing films as dielectric capping barrier for advanced interconnects

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0472804A2 (en) * 1990-08-01 1992-03-04 International Business Machines Corporation Copper-semiconductor compounds capable of being produced at room temperature
WO1998032175A1 (en) * 1997-01-16 1998-07-23 Koninklijke Philips Electronics N.V. Semiconductor device provided with a metallization with a barrier layer comprising at least titanium, tungsten, or nitrogen, and method of manufacturing same
US5913147A (en) * 1997-01-21 1999-06-15 Advanced Micro Devices, Inc. Method for fabricating copper-aluminum metallization
US6015749A (en) * 1998-05-04 2000-01-18 Taiwan Semiconductor Manufacturing Company Method to improve adhesion between copper and titanium nitride, for copper interconnect structures, via the use of an ion implantation procedure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0472804A2 (en) * 1990-08-01 1992-03-04 International Business Machines Corporation Copper-semiconductor compounds capable of being produced at room temperature
WO1998032175A1 (en) * 1997-01-16 1998-07-23 Koninklijke Philips Electronics N.V. Semiconductor device provided with a metallization with a barrier layer comprising at least titanium, tungsten, or nitrogen, and method of manufacturing same
US5913147A (en) * 1997-01-21 1999-06-15 Advanced Micro Devices, Inc. Method for fabricating copper-aluminum metallization
US6015749A (en) * 1998-05-04 2000-01-18 Taiwan Semiconductor Manufacturing Company Method to improve adhesion between copper and titanium nitride, for copper interconnect structures, via the use of an ion implantation procedure

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8504620B2 (en) 2000-11-30 2013-08-06 Applied Materials, Inc. Dynamic subject information generation in message services of distributed object systems
US7783375B2 (en) 2001-06-19 2010-08-24 Applied Materials, Inc. Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing
US8694145B2 (en) 2001-06-19 2014-04-08 Applied Materials, Inc. Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles
US8070909B2 (en) 2001-06-19 2011-12-06 Applied Materials, Inc. Feedback control of chemical mechanical polishing device providing manipulation of removal rate profiles
US7698012B2 (en) 2001-06-19 2010-04-13 Applied Materials, Inc. Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing
US7725208B2 (en) 2001-06-19 2010-05-25 Applied Materials, Inc. Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing
US6879046B2 (en) 2001-06-28 2005-04-12 Agere Systems Inc. Split barrier layer including nitrogen-containing portion and oxygen-containing portion
GB2387027B (en) * 2002-01-02 2006-07-12 Agere Systems Inc Split barrier layer including nitrogen-containing portion and oxygen-containing portion
GB2387027A (en) * 2002-01-02 2003-10-01 Agere Systems Inc Split barrier layer including nitrogen-containing portion and oxygen-containing portion
US7966087B2 (en) 2002-11-15 2011-06-21 Applied Materials, Inc. Method, system and medium for controlling manufacture process having multivariate input parameters
US7335990B2 (en) 2004-04-27 2008-02-26 Agency For Science, Technology And Research Process of forming a composite diffusion barrier in copper/organic low-k damascene technology
US8012872B2 (en) 2004-11-08 2011-09-06 Nxp B.V. Planarising damascene structures
WO2006048823A1 (en) * 2004-11-08 2006-05-11 Koninklijke Philips Electronics N.V. Planarising damascene structures
US8884441B2 (en) 2013-02-18 2014-11-11 Taiwan Semiconductor Manufacturing Co., Ltd. Process of ultra thick trench etch with multi-slope profile

Also Published As

Publication number Publication date
TW478101B (en) 2002-03-01
KR20010092679A (ko) 2001-10-26
GB0101254D0 (en) 2001-02-28
JP2001313296A (ja) 2001-11-09
CN1319891A (zh) 2001-10-31

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Legal Events

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WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)