GB2345289B - Diazonaphthoquinonesulfonyl substituted polymers - Google Patents
Diazonaphthoquinonesulfonyl substituted polymersInfo
- Publication number
- GB2345289B GB2345289B GB9917218A GB9917218A GB2345289B GB 2345289 B GB2345289 B GB 2345289B GB 9917218 A GB9917218 A GB 9917218A GB 9917218 A GB9917218 A GB 9917218A GB 2345289 B GB2345289 B GB 2345289B
- Authority
- GB
- United Kingdom
- Prior art keywords
- reflective
- present
- polymers
- reflective coating
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F8/00—Chemical modification by after-treatment
- C08F8/34—Introducing sulfur atoms or sulfur-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/16—Halogens
- C08F212/20—Fluorine
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-1998-0063695A KR100363695B1 (ko) | 1998-12-31 | 1998-12-31 | 유기난반사방지중합체및그의제조방법 |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9917218D0 GB9917218D0 (en) | 1999-09-22 |
GB2345289A GB2345289A (en) | 2000-07-05 |
GB2345289B true GB2345289B (en) | 2003-03-26 |
Family
ID=19570257
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9917218A Expired - Fee Related GB2345289B (en) | 1998-12-31 | 1999-07-23 | Diazonaphthoquinonesulfonyl substituted polymers |
Country Status (10)
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1190277B1 (en) * | 1999-06-10 | 2009-10-07 | AlliedSignal Inc. | Semiconductor having spin-on-glass anti-reflective coatings for photolithography |
US6824879B2 (en) | 1999-06-10 | 2004-11-30 | Honeywell International Inc. | Spin-on-glass anti-reflective coatings for photolithography |
KR100557606B1 (ko) * | 1999-08-31 | 2006-03-10 | 주식회사 하이닉스반도체 | 유기 난반사 방지용 중합체 |
KR100427440B1 (ko) * | 1999-12-23 | 2004-04-17 | 주식회사 하이닉스반도체 | 유기 반사방지 화합물 및 그의 제조방법 |
US7132219B2 (en) * | 2001-02-02 | 2006-11-07 | Brewer Science Inc. | Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition |
JP3509760B2 (ja) * | 2001-02-08 | 2004-03-22 | 株式会社半導体先端テクノロジーズ | 半導体装置の製造方法 |
KR100465866B1 (ko) * | 2001-10-26 | 2005-01-13 | 주식회사 하이닉스반도체 | 유기반사방지막 조성물 및 그의 제조방법 |
JP4381143B2 (ja) * | 2001-11-15 | 2009-12-09 | ハネウェル・インターナショナル・インコーポレーテッド | フォトリソグラフィー用スピンオン反射防止膜 |
US6852474B2 (en) * | 2002-04-30 | 2005-02-08 | Brewer Science Inc. | Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition |
WO2004027850A1 (en) * | 2002-09-20 | 2004-04-01 | Honeywell International, Inc. | Interlayer adhesion promoter for low k materials |
US7056826B2 (en) * | 2003-01-07 | 2006-06-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming copper interconnects |
US8053159B2 (en) | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
US7078336B2 (en) * | 2003-11-19 | 2006-07-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for fabricating a copper barrier layer with low dielectric constant and leakage current |
US20050255410A1 (en) * | 2004-04-29 | 2005-11-17 | Guerrero Douglas J | Anti-reflective coatings using vinyl ether crosslinkers |
US20060255315A1 (en) * | 2004-11-19 | 2006-11-16 | Yellowaga Deborah L | Selective removal chemistries for semiconductor applications, methods of production and uses thereof |
JP4720988B2 (ja) * | 2005-07-11 | 2011-07-13 | 日産化学工業株式会社 | フルオレン構造を有する化合物を含むリソグラフィー用下層膜形成組成物 |
KR100671114B1 (ko) | 2005-07-28 | 2007-01-17 | 제일모직주식회사 | 반사방지성을 갖는 하드마스크 조성물 |
US7488771B2 (en) * | 2005-09-02 | 2009-02-10 | International Business Machines Corporation | Stabilization of vinyl ether materials |
US7419611B2 (en) * | 2005-09-02 | 2008-09-02 | International Business Machines Corporation | Processes and materials for step and flash imprint lithography |
US7914974B2 (en) | 2006-08-18 | 2011-03-29 | Brewer Science Inc. | Anti-reflective imaging layer for multiple patterning process |
JP4952906B2 (ja) * | 2006-11-15 | 2012-06-13 | ソニーケミカル&インフォメーションデバイス株式会社 | 封止樹脂組成物及び発光素子 |
US8642246B2 (en) * | 2007-02-26 | 2014-02-04 | Honeywell International Inc. | Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof |
JP5099140B2 (ja) * | 2007-08-24 | 2012-12-12 | 東レ株式会社 | 感光性組成物、それから形成された硬化膜、および硬化膜を有する素子 |
EP2245512B1 (en) | 2008-01-29 | 2019-09-11 | Brewer Science, Inc. | On-track process for patterning hardmask by multiple dark field exposures |
US9640396B2 (en) | 2009-01-07 | 2017-05-02 | Brewer Science Inc. | Spin-on spacer materials for double- and triple-patterning lithography |
US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
JP5842503B2 (ja) * | 2010-09-29 | 2016-01-13 | Jsr株式会社 | レジスト下層膜形成用組成物、レジスト下層膜及びその形成方法 |
KR101811064B1 (ko) | 2010-09-29 | 2017-12-20 | 제이에스알 가부시끼가이샤 | 패턴형성 방법, 레지스트 하층막의 형성 방법, 레지스트 하층막 형성용 조성물 및 레지스트 하층막 |
US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
KR101993480B1 (ko) * | 2011-12-16 | 2019-06-26 | 제이에스알 가부시끼가이샤 | 레지스트 하층막 형성용 수지 조성물, 레지스트 하층막, 그의 형성 방법 및 패턴 형성 방법 |
JP6160068B2 (ja) * | 2011-12-16 | 2017-07-12 | Jsr株式会社 | レジスト下層膜形成用樹脂組成物、レジスト下層膜、その形成方法及びパターン形成方法 |
EP3194502A4 (en) | 2015-04-13 | 2018-05-16 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications |
CN107797384B (zh) * | 2016-09-07 | 2020-10-09 | 上海飞凯电子材料有限公司 | 一种感光树脂、正性光刻胶及应用 |
CN117820910A (zh) * | 2022-06-30 | 2024-04-05 | 华为技术有限公司 | 涂层材料和集成电路及制备方法、电子设备 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4424270A (en) * | 1981-01-03 | 1984-01-03 | Hoechst Aktiengesellschaft | Light-sensitive mixture comprising a naphthoquinonediazidesulfonic acid ester and process for preparing said ester |
EP0277038A2 (en) * | 1987-01-30 | 1988-08-03 | Konica Corporation | Multi-color transfer image forming method |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5236043B2 (US06492441-20021210-C00072.png) * | 1974-02-21 | 1977-09-13 | ||
US4822718A (en) | 1982-09-30 | 1989-04-18 | Brewer Science, Inc. | Light absorbing coating |
US5674648A (en) | 1984-08-06 | 1997-10-07 | Brewer Science, Inc. | Anti-reflective coating |
GB8430377D0 (en) * | 1984-12-01 | 1985-01-09 | Ciba Geigy Ag | Modified phenolic resins |
GB8505402D0 (en) * | 1985-03-02 | 1985-04-03 | Ciba Geigy Ag | Modified phenolic resins |
JPH0210346A (ja) * | 1988-06-29 | 1990-01-16 | Matsushita Electric Ind Co Ltd | パターン形成材料 |
CA2041434A1 (en) * | 1990-05-02 | 1991-11-03 | Teijiro Kitao | Resist composition |
KR920005774B1 (ko) * | 1990-06-16 | 1992-07-18 | 제일합섬 주식회사 | 반도체용 포지티브 포토레지스트 조성물 |
DE4106356A1 (de) * | 1991-02-28 | 1992-09-03 | Hoechst Ag | Strahlungsempfindliche polymere mit naphthochinon-2-diazid-4-sulfonyl-gruppen und deren verwendung in einem positiv arbeitenden aufzeichnungsmaterial |
JPH05188588A (ja) * | 1992-01-08 | 1993-07-30 | Konica Corp | 感光性平版印刷版 |
JP3192548B2 (ja) * | 1994-04-22 | 2001-07-30 | 東京応化工業株式会社 | ポジ型ホトレジスト組成物 |
US6669995B1 (en) * | 1994-10-12 | 2003-12-30 | Linda Insalaco | Method of treating an anti-reflective coating on a substrate |
US5525457A (en) * | 1994-12-09 | 1996-06-11 | Japan Synthetic Rubber Co., Ltd. | Reflection preventing film and process for forming resist pattern using the same |
GB9426206D0 (en) * | 1994-12-23 | 1995-02-22 | Horsell Plc | Lithographic plate |
US5529880A (en) * | 1995-03-29 | 1996-06-25 | Shipley Company, L.L.C. | Photoresist with a mixture of a photosensitive esterified resin and an o-naphthoquinone diazide compound |
US5719004A (en) * | 1996-08-07 | 1998-02-17 | Clariant Finance (Bvi) Limited | Positive photoresist composition containing a 2,4-dinitro-1-naphthol |
JP3823449B2 (ja) * | 1997-06-16 | 2006-09-20 | 住友化学株式会社 | フォトレジスト組成物 |
TW457403B (en) | 1998-07-03 | 2001-10-01 | Clariant Int Ltd | Composition for forming a radiation absorbing coating containing blocked isocyanate compound and anti-reflective coating formed therefrom |
-
1998
- 1998-12-31 KR KR10-1998-0063695A patent/KR100363695B1/ko not_active IP Right Cessation
-
1999
- 1999-07-23 GB GB9917218A patent/GB2345289B/en not_active Expired - Fee Related
- 1999-07-30 FR FR9909924A patent/FR2788060B1/fr not_active Expired - Fee Related
- 1999-08-17 NL NL1012840A patent/NL1012840C2/nl not_active IP Right Cessation
- 1999-08-25 DE DE19940320A patent/DE19940320B4/de not_active Expired - Fee Related
- 1999-09-22 TW TW088116247A patent/TWI227259B/zh not_active IP Right Cessation
- 1999-10-07 US US09/413,679 patent/US6350818B1/en not_active Expired - Fee Related
- 1999-10-12 JP JP28983199A patent/JP4253088B2/ja not_active Expired - Fee Related
- 1999-11-24 IT IT1999TO001027A patent/IT1308658B1/it active
- 1999-12-23 CN CNB991249739A patent/CN1166704C/zh not_active Expired - Fee Related
-
2001
- 2001-12-11 US US10/015,333 patent/US6492441B2/en not_active Expired - Fee Related
-
2007
- 2007-02-22 JP JP2007042141A patent/JP2007231270A/ja not_active Withdrawn
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4424270A (en) * | 1981-01-03 | 1984-01-03 | Hoechst Aktiengesellschaft | Light-sensitive mixture comprising a naphthoquinonediazidesulfonic acid ester and process for preparing said ester |
EP0277038A2 (en) * | 1987-01-30 | 1988-08-03 | Konica Corporation | Multi-color transfer image forming method |
Also Published As
Publication number | Publication date |
---|---|
ITTO991027A0 (it) | 1999-11-24 |
ITTO991027A1 (it) | 2001-05-24 |
FR2788060A1 (fr) | 2000-07-07 |
DE19940320B4 (de) | 2006-09-21 |
GB9917218D0 (en) | 1999-09-22 |
TWI227259B (en) | 2005-02-01 |
CN1166704C (zh) | 2004-09-15 |
GB2345289A (en) | 2000-07-05 |
NL1012840C2 (nl) | 2001-06-07 |
DE19940320A1 (de) | 2000-07-06 |
CN1260355A (zh) | 2000-07-19 |
KR100363695B1 (ko) | 2003-04-11 |
FR2788060B1 (fr) | 2003-10-17 |
NL1012840A1 (nl) | 2000-07-03 |
JP2000204115A (ja) | 2000-07-25 |
US6492441B2 (en) | 2002-12-10 |
KR20010016643A (ko) | 2001-03-05 |
US20020120070A1 (en) | 2002-08-29 |
JP2007231270A (ja) | 2007-09-13 |
US6350818B1 (en) | 2002-02-26 |
IT1308658B1 (it) | 2002-01-09 |
JP4253088B2 (ja) | 2009-04-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2345289B (en) | Diazonaphthoquinonesulfonyl substituted polymers | |
JP4791433B2 (ja) | 反射防止膜用組成物、反射防止膜の製造方法、および半導体素子の製造方法 | |
JP3315345B2 (ja) | 半導体装置の製造方法 | |
WO2004036311A3 (en) | Anti-reflective compositions comprising triazine compounds | |
MY139535A (en) | Process for producing an image using a first minimum bottom antireflective coating composition | |
JPS63221110A (ja) | 光重合開始剤組成物および光重合性組成物 | |
JPS5660447A (en) | Forming method of organic photoconductive film | |
NO981006D0 (no) | Fremgangsmåte for å danne tynne, holdbare belegg av perfluorkarbonionomerer på forskjellige substratmaterialer | |
US4469778A (en) | Pattern formation method utilizing deep UV radiation and bisazide composition | |
EP1160848A3 (en) | Composition for silica-based film formation | |
US4400461A (en) | Process of making semiconductor devices using photosensitive bodies | |
CN1471132A (zh) | 半导体器件的图案形成方法及半导体器件 | |
US4551416A (en) | Process for preparing semiconductors using photosensitive bodies | |
TWI251017B (en) | Organic anti-reflective coating composition and method for forming photoresist patterns using the same | |
JP2001158810A (ja) | 有機反射防止膜用組成物とその製造方法 | |
EP0287750A3 (en) | Photoactive curcumin derivatives | |
JPH08225773A (ja) | 反射防止膜組成物 | |
US4666820A (en) | Photosensitive element comprising a substrate and an alkaline soluble mixture | |
US5888703A (en) | Method of forming resist pattern utilizing antireflective layer containing rosin or hydrogenated rosin | |
JPH06138664A (ja) | パターン形成方法 | |
KR100419029B1 (ko) | 알칼리 처리 과정을 포함하는 포토레지스트 패턴 형성방법 | |
KR20010016641A (ko) | 유기 난반사방지 중합체 및 그의 제조방법 | |
KR970051880A (ko) | 반도체 소자의 포토레지스트 형성 방법 | |
EP0200110A1 (en) | Photosensitive composition and pattern forming process using same | |
GB2046463A (en) | Process for the production of structured positive photo-lacquer layers on a substrate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20090723 |