GB2321771A - Stacked capacitor - Google Patents
Stacked capacitor Download PDFInfo
- Publication number
- GB2321771A GB2321771A GB9701923A GB9701923A GB2321771A GB 2321771 A GB2321771 A GB 2321771A GB 9701923 A GB9701923 A GB 9701923A GB 9701923 A GB9701923 A GB 9701923A GB 2321771 A GB2321771 A GB 2321771A
- Authority
- GB
- United Kingdom
- Prior art keywords
- trunk
- conductive layer
- memory device
- semiconductor memory
- branch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 130
- 238000003860 storage Methods 0.000 claims abstract description 172
- 239000004065 semiconductor Substances 0.000 claims abstract description 70
- 238000012546 transfer Methods 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000004020 conductor Substances 0.000 claims 5
- 239000007787 solid Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 170
- 229920005591 polysilicon Polymers 0.000 description 170
- 238000005530 etching Methods 0.000 description 58
- 238000000034 method Methods 0.000 description 49
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 44
- 125000006850 spacer group Chemical group 0.000 description 23
- 235000012239 silicon dioxide Nutrition 0.000 description 22
- 239000000377 silicon dioxide Substances 0.000 description 22
- 238000005229 chemical vapour deposition Methods 0.000 description 21
- 238000000206 photolithography Methods 0.000 description 20
- 238000001039 wet etching Methods 0.000 description 18
- 229910052785 arsenic Inorganic materials 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- -1 phosphorus ions Chemical class 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 230000010354 integration Effects 0.000 description 5
- 239000005380 borophosphosilicate glass Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 241000282320 Panthera leo Species 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9701923A GB2321771A (en) | 1996-08-16 | 1997-01-30 | Stacked capacitor |
| NL1005628A NL1005628C2 (nl) | 1996-08-16 | 1997-03-25 | Werkwijze voor het vervaardigen van een halfgeleidergeheugeninrichting. |
| FR9705115A FR2752490B1 (fr) | 1996-08-16 | 1997-04-25 | Dispositif de memoire a semiconducteurs et structure de condensateur pour ce dispositif |
| DE19720227A DE19720227A1 (de) | 1996-08-16 | 1997-05-14 | Halbleiter-Speichervorrichtung |
| JP9140458A JPH10135428A (ja) | 1996-08-16 | 1997-05-29 | 半導体記憶装置のキャパシタ構成 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW085110010A TW308729B (en) | 1996-08-16 | 1996-08-16 | Semiconductor memory device with capacitor (3) |
| GB9701923A GB2321771A (en) | 1996-08-16 | 1997-01-30 | Stacked capacitor |
| NL1005628A NL1005628C2 (nl) | 1996-08-16 | 1997-03-25 | Werkwijze voor het vervaardigen van een halfgeleidergeheugeninrichting. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB9701923D0 GB9701923D0 (en) | 1997-03-19 |
| GB2321771A true GB2321771A (en) | 1998-08-05 |
Family
ID=27268699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9701923A Withdrawn GB2321771A (en) | 1996-08-16 | 1997-01-30 | Stacked capacitor |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPH10135428A (ja) |
| DE (1) | DE19720227A1 (ja) |
| FR (1) | FR2752490B1 (ja) |
| GB (1) | GB2321771A (ja) |
| NL (1) | NL1005628C2 (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2410375A (en) * | 2002-06-27 | 2005-07-27 | Samsung Electronics Co Ltd | DRAM capacitor electrodes |
| US7399689B2 (en) | 2002-06-27 | 2008-07-15 | Samsung Electronics Co., Ltd. | Methods for manufacturing semiconductor memory devices using sidewall spacers |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6025244A (en) * | 1997-12-04 | 2000-02-15 | Fujitsu Limited | Self-aligned patterns by chemical-mechanical polishing particularly suited to the formation of MCM capacitors |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5142639A (en) * | 1990-05-18 | 1992-08-25 | Kabushiki Kaisha Toshiba | Semiconductor memory device having a stacked capacitor cell structure |
| US5145801A (en) * | 1992-02-07 | 1992-09-08 | Micron Technology, Inc. | Method of increasing the surface area of a mini-stacked capacitor |
| US5164337A (en) * | 1989-11-01 | 1992-11-17 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating a semiconductor device having a capacitor in a stacked memory cell |
| US5240871A (en) * | 1991-09-06 | 1993-08-31 | Micron Technology, Inc. | Corrugated storage contact capacitor and method for forming a corrugated storage contact capacitor |
| US5330928A (en) * | 1992-09-28 | 1994-07-19 | Industrial Technology Research Institute | Method for fabricating stacked capacitors with increased capacitance in a DRAM cell |
| US5436188A (en) * | 1994-04-26 | 1995-07-25 | Industrial Technology Research Institute | Dram cell process having elk horn shaped capacitor |
| US5595931A (en) * | 1994-06-30 | 1997-01-21 | Hyundai Electronics Industries Co., Ltd. | Method for fabricating capacitor of a semiconductor device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05308131A (ja) * | 1992-04-30 | 1993-11-19 | Sanyo Electric Co Ltd | 半導体記憶装置の製造方法 |
| JP2953220B2 (ja) * | 1992-10-30 | 1999-09-27 | 日本電気株式会社 | 半導体装置の製造方法 |
| JPH07249690A (ja) * | 1994-03-14 | 1995-09-26 | Fujitsu Ltd | 半導体装置の製造方法 |
-
1997
- 1997-01-30 GB GB9701923A patent/GB2321771A/en not_active Withdrawn
- 1997-03-25 NL NL1005628A patent/NL1005628C2/nl not_active IP Right Cessation
- 1997-04-25 FR FR9705115A patent/FR2752490B1/fr not_active Expired - Fee Related
- 1997-05-14 DE DE19720227A patent/DE19720227A1/de not_active Withdrawn
- 1997-05-29 JP JP9140458A patent/JPH10135428A/ja active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5164337A (en) * | 1989-11-01 | 1992-11-17 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating a semiconductor device having a capacitor in a stacked memory cell |
| US5142639A (en) * | 1990-05-18 | 1992-08-25 | Kabushiki Kaisha Toshiba | Semiconductor memory device having a stacked capacitor cell structure |
| US5240871A (en) * | 1991-09-06 | 1993-08-31 | Micron Technology, Inc. | Corrugated storage contact capacitor and method for forming a corrugated storage contact capacitor |
| US5145801A (en) * | 1992-02-07 | 1992-09-08 | Micron Technology, Inc. | Method of increasing the surface area of a mini-stacked capacitor |
| US5330928A (en) * | 1992-09-28 | 1994-07-19 | Industrial Technology Research Institute | Method for fabricating stacked capacitors with increased capacitance in a DRAM cell |
| US5436188A (en) * | 1994-04-26 | 1995-07-25 | Industrial Technology Research Institute | Dram cell process having elk horn shaped capacitor |
| US5595931A (en) * | 1994-06-30 | 1997-01-21 | Hyundai Electronics Industries Co., Ltd. | Method for fabricating capacitor of a semiconductor device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2410375A (en) * | 2002-06-27 | 2005-07-27 | Samsung Electronics Co Ltd | DRAM capacitor electrodes |
| GB2410374A (en) * | 2002-06-27 | 2005-07-27 | Samsung Electronics Co Ltd | DRAM storage electrode manufacturing method |
| GB2410375B (en) * | 2002-06-27 | 2005-11-30 | Samsung Electronics Co Ltd | Semiconductor memory devices and methods for manufacturing the same using sidewall spacers |
| GB2410374B (en) * | 2002-06-27 | 2005-11-30 | Samsung Electronics Co Ltd | Methods for manufacturing semiconductor memory using sidewall spacers |
| US7399689B2 (en) | 2002-06-27 | 2008-07-15 | Samsung Electronics Co., Ltd. | Methods for manufacturing semiconductor memory devices using sidewall spacers |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2752490B1 (fr) | 2001-05-25 |
| GB9701923D0 (en) | 1997-03-19 |
| JPH10135428A (ja) | 1998-05-22 |
| NL1005628C2 (nl) | 1998-09-28 |
| FR2752490A1 (fr) | 1998-02-20 |
| DE19720227A1 (de) | 1998-02-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |