GB2410374B - Methods for manufacturing semiconductor memory using sidewall spacers - Google Patents
Methods for manufacturing semiconductor memory using sidewall spacersInfo
- Publication number
- GB2410374B GB2410374B GB0500293A GB0500293A GB2410374B GB 2410374 B GB2410374 B GB 2410374B GB 0500293 A GB0500293 A GB 0500293A GB 0500293 A GB0500293 A GB 0500293A GB 2410374 B GB2410374 B GB 2410374B
- Authority
- GB
- United Kingdom
- Prior art keywords
- methods
- semiconductor memory
- sidewall spacers
- manufacturing semiconductor
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0036414A KR100434506B1 (en) | 2002-06-27 | 2002-06-27 | Semiconductor memory device and method for manufacturing the same |
KR10-2002-0037059A KR100480602B1 (en) | 2002-06-28 | 2002-06-28 | Semiconductor memory device and method for manufacturing the same |
GB0314707A GB2392311B (en) | 2002-06-27 | 2003-06-24 | Semiconductor memory devices and methods for manufacturing the same using sidewall spacers |
Publications (3)
Publication Number | Publication Date |
---|---|
GB0500293D0 GB0500293D0 (en) | 2005-02-16 |
GB2410374A GB2410374A (en) | 2005-07-27 |
GB2410374B true GB2410374B (en) | 2005-11-30 |
Family
ID=34743278
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0500295A Expired - Fee Related GB2410376B (en) | 2002-06-27 | 2003-06-24 | Semiconductor memory devices and methods for manufacturing the same using sidewall spacers |
GB0500293A Expired - Fee Related GB2410374B (en) | 2002-06-27 | 2003-06-24 | Methods for manufacturing semiconductor memory using sidewall spacers |
GB0500294A Expired - Fee Related GB2410375B (en) | 2002-06-27 | 2003-06-24 | Semiconductor memory devices and methods for manufacturing the same using sidewall spacers |
GB0500291A Expired - Fee Related GB2410373B (en) | 2002-06-27 | 2003-06-24 | Semi conductor memory devices and methods for manufacturing the same using sidewall spacers |
GB0500290A Expired - Fee Related GB2410372B (en) | 2002-06-27 | 2003-06-24 | Semiconductor memory devices and methods for manufacturing the same using sidewall spacers |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0500295A Expired - Fee Related GB2410376B (en) | 2002-06-27 | 2003-06-24 | Semiconductor memory devices and methods for manufacturing the same using sidewall spacers |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0500294A Expired - Fee Related GB2410375B (en) | 2002-06-27 | 2003-06-24 | Semiconductor memory devices and methods for manufacturing the same using sidewall spacers |
GB0500291A Expired - Fee Related GB2410373B (en) | 2002-06-27 | 2003-06-24 | Semi conductor memory devices and methods for manufacturing the same using sidewall spacers |
GB0500290A Expired - Fee Related GB2410372B (en) | 2002-06-27 | 2003-06-24 | Semiconductor memory devices and methods for manufacturing the same using sidewall spacers |
Country Status (1)
Country | Link |
---|---|
GB (5) | GB2410376B (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5721154A (en) * | 1996-06-18 | 1998-02-24 | Vanguard International Semiconductor | Method for fabricating a four fin capacitor structure |
GB2321771A (en) * | 1996-08-16 | 1998-08-05 | United Microelectronics Corp | Stacked capacitor |
US6025624A (en) * | 1998-06-19 | 2000-02-15 | Micron Technology, Inc. | Shared length cell for improved capacitance |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5550076A (en) * | 1995-09-11 | 1996-08-27 | Vanguard International Semiconductor Corp. | Method of manufacture of coaxial capacitor for dram memory cell and cell manufactured thereby |
US5856220A (en) * | 1996-02-08 | 1999-01-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating a double wall tub shaped capacitor |
US6063656A (en) * | 1997-04-18 | 2000-05-16 | Micron Technology, Inc. | Cell capacitors, memory cells, memory arrays, and method of fabrication |
US5854105A (en) * | 1997-11-05 | 1998-12-29 | Vanguard International Semiconductor Corporation | Method for making dynamic random access memory cells having double-crown stacked capacitors with center posts |
US5913119A (en) * | 1998-06-26 | 1999-06-15 | Vanguard Int Semiconduct Corp | Method of selective growth of a hemispherical grain silicon layer on the outer sides of a crown shaped DRAM capacitor structure |
-
2003
- 2003-06-24 GB GB0500295A patent/GB2410376B/en not_active Expired - Fee Related
- 2003-06-24 GB GB0500293A patent/GB2410374B/en not_active Expired - Fee Related
- 2003-06-24 GB GB0500294A patent/GB2410375B/en not_active Expired - Fee Related
- 2003-06-24 GB GB0500291A patent/GB2410373B/en not_active Expired - Fee Related
- 2003-06-24 GB GB0500290A patent/GB2410372B/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5721154A (en) * | 1996-06-18 | 1998-02-24 | Vanguard International Semiconductor | Method for fabricating a four fin capacitor structure |
GB2321771A (en) * | 1996-08-16 | 1998-08-05 | United Microelectronics Corp | Stacked capacitor |
US6025624A (en) * | 1998-06-19 | 2000-02-15 | Micron Technology, Inc. | Shared length cell for improved capacitance |
Also Published As
Publication number | Publication date |
---|---|
GB0500291D0 (en) | 2005-02-16 |
GB2410373A (en) | 2005-07-27 |
GB0500293D0 (en) | 2005-02-16 |
GB2410372B (en) | 2005-11-30 |
GB2410373B (en) | 2006-03-22 |
GB0500290D0 (en) | 2005-02-16 |
GB2410372A (en) | 2005-07-27 |
GB2410375B (en) | 2005-11-30 |
GB0500295D0 (en) | 2005-02-16 |
GB2410374A (en) | 2005-07-27 |
GB2410376B (en) | 2005-11-30 |
GB0500294D0 (en) | 2005-02-16 |
GB2410375A (en) | 2005-07-27 |
GB2410376A (en) | 2005-07-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20090624 |