GB2410376B - Semiconductor memory devices and methods for manufacturing the same using sidewall spacers - Google Patents

Semiconductor memory devices and methods for manufacturing the same using sidewall spacers

Info

Publication number
GB2410376B
GB2410376B GB0500295A GB0500295A GB2410376B GB 2410376 B GB2410376 B GB 2410376B GB 0500295 A GB0500295 A GB 0500295A GB 0500295 A GB0500295 A GB 0500295A GB 2410376 B GB2410376 B GB 2410376B
Authority
GB
United Kingdom
Prior art keywords
manufacturing
methods
same
semiconductor memory
memory devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0500295A
Other versions
GB2410376A (en
GB0500295D0 (en
Inventor
Byung-Jun Park
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR10-2002-0036414A external-priority patent/KR100434506B1/en
Priority claimed from KR10-2002-0037059A external-priority patent/KR100480602B1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Priority claimed from GB0314707A external-priority patent/GB2392311B/en
Publication of GB0500295D0 publication Critical patent/GB0500295D0/en
Publication of GB2410376A publication Critical patent/GB2410376A/en
Application granted granted Critical
Publication of GB2410376B publication Critical patent/GB2410376B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Engineering & Computer Science (AREA)
  • Semiconductor Memories (AREA)
GB0500295A 2002-06-27 2003-06-24 Semiconductor memory devices and methods for manufacturing the same using sidewall spacers Expired - Fee Related GB2410376B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2002-0036414A KR100434506B1 (en) 2002-06-27 2002-06-27 Semiconductor memory device and method for manufacturing the same
KR10-2002-0037059A KR100480602B1 (en) 2002-06-28 2002-06-28 Semiconductor memory device and method for manufacturing the same
GB0314707A GB2392311B (en) 2002-06-27 2003-06-24 Semiconductor memory devices and methods for manufacturing the same using sidewall spacers

Publications (3)

Publication Number Publication Date
GB0500295D0 GB0500295D0 (en) 2005-02-16
GB2410376A GB2410376A (en) 2005-07-27
GB2410376B true GB2410376B (en) 2005-11-30

Family

ID=34743278

Family Applications (5)

Application Number Title Priority Date Filing Date
GB0500290A Expired - Fee Related GB2410372B (en) 2002-06-27 2003-06-24 Semiconductor memory devices and methods for manufacturing the same using sidewall spacers
GB0500293A Expired - Fee Related GB2410374B (en) 2002-06-27 2003-06-24 Methods for manufacturing semiconductor memory using sidewall spacers
GB0500294A Expired - Fee Related GB2410375B (en) 2002-06-27 2003-06-24 Semiconductor memory devices and methods for manufacturing the same using sidewall spacers
GB0500291A Expired - Fee Related GB2410373B (en) 2002-06-27 2003-06-24 Semi conductor memory devices and methods for manufacturing the same using sidewall spacers
GB0500295A Expired - Fee Related GB2410376B (en) 2002-06-27 2003-06-24 Semiconductor memory devices and methods for manufacturing the same using sidewall spacers

Family Applications Before (4)

Application Number Title Priority Date Filing Date
GB0500290A Expired - Fee Related GB2410372B (en) 2002-06-27 2003-06-24 Semiconductor memory devices and methods for manufacturing the same using sidewall spacers
GB0500293A Expired - Fee Related GB2410374B (en) 2002-06-27 2003-06-24 Methods for manufacturing semiconductor memory using sidewall spacers
GB0500294A Expired - Fee Related GB2410375B (en) 2002-06-27 2003-06-24 Semiconductor memory devices and methods for manufacturing the same using sidewall spacers
GB0500291A Expired - Fee Related GB2410373B (en) 2002-06-27 2003-06-24 Semi conductor memory devices and methods for manufacturing the same using sidewall spacers

Country Status (1)

Country Link
GB (5) GB2410372B (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5721154A (en) * 1996-06-18 1998-02-24 Vanguard International Semiconductor Method for fabricating a four fin capacitor structure

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5550076A (en) * 1995-09-11 1996-08-27 Vanguard International Semiconductor Corp. Method of manufacture of coaxial capacitor for dram memory cell and cell manufactured thereby
US5856220A (en) * 1996-02-08 1999-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating a double wall tub shaped capacitor
GB2321771A (en) * 1996-08-16 1998-08-05 United Microelectronics Corp Stacked capacitor
US6063656A (en) * 1997-04-18 2000-05-16 Micron Technology, Inc. Cell capacitors, memory cells, memory arrays, and method of fabrication
US5854105A (en) * 1997-11-05 1998-12-29 Vanguard International Semiconductor Corporation Method for making dynamic random access memory cells having double-crown stacked capacitors with center posts
US6025624A (en) * 1998-06-19 2000-02-15 Micron Technology, Inc. Shared length cell for improved capacitance
US5913119A (en) * 1998-06-26 1999-06-15 Vanguard Int Semiconduct Corp Method of selective growth of a hemispherical grain silicon layer on the outer sides of a crown shaped DRAM capacitor structure

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5721154A (en) * 1996-06-18 1998-02-24 Vanguard International Semiconductor Method for fabricating a four fin capacitor structure

Also Published As

Publication number Publication date
GB0500290D0 (en) 2005-02-16
GB2410375B (en) 2005-11-30
GB2410374B (en) 2005-11-30
GB2410376A (en) 2005-07-27
GB2410372B (en) 2005-11-30
GB2410374A (en) 2005-07-27
GB2410372A (en) 2005-07-27
GB0500293D0 (en) 2005-02-16
GB0500291D0 (en) 2005-02-16
GB0500294D0 (en) 2005-02-16
GB2410373A (en) 2005-07-27
GB2410375A (en) 2005-07-27
GB0500295D0 (en) 2005-02-16
GB2410373B (en) 2006-03-22

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20090624