GB2321779A

GB2321779A - Semiconductor memory device having a capacitor

Info

Publication number: GB2321779A
Application number: GB9701974A
Authority: GB
Inventors: Fang-Ching Chao
Original assignee: United Microelectronics Corp
Current assignee: United Microelectronics Corp
Priority date: 1996-08-16
Filing date: 1997-01-30
Publication date: 1998-08-05
Also published as: DE19720272A1; FR2752492B1; GB9701974D0; FR2752492A1; JPH1079474A

Abstract

A semiconductor memory device e.g. a DRAM includes a substrate 10, a transfer transistor formed on the substrate, and a charge storage capacitor. The transfer transistor has source/drain regions 16a,16b,18a,18b with one of the source/drain regions electrically coupled to the charge storage capacitor. The charge storage capacitor includes an electrode having a trunk-like conductive layer 26a,26b of T- or U-section and one or more branch-like conductive layers 40a,40b of inverted L-section, and a dielectric layer and an upper conductive layer (not shown) forming a second electrode. The trunk-like conductive layer 26a,26b is electrically coupled to one of the source/drain regions 16a,16b,18a,18b of the transfer transistor, and one end of the branch-like conductive layer 40a,40b, which may be cylindrical is connected to the upper surface of the trunk-like conductive layer. The upper parts of the inverted L-section layers may be turned towards or away from each other.

Description

1 2321779 SEMICONDUCTOR MEMORY DEVICE HAVING A CAPACITOR

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention relates in general to semiconductor memory devices, and more particularly to a structure of a dynamic random access memory (DRAM) cell having a transfer transistor and a tree-type charge storage capacitor. 2. Desgription of Related Art Figure I is a circuit diagram of a memory cell for a DRAM device. As shown in the drawing, a DRAM cell is substantially composed of a transfer transistor T and a charge storage capacitor C. A source of the transfer transistor T is connected to a corresponding bit line BL, and a drain thereof is connected to a storage electrode 6 of the charge storage capacitor C. A gate of the transfer transistor T is connected to a corresponding word line VrL. An opposing electrode8 of the capacitor is connected to a constant power source. A dielectric film 7 is provided between the storage electrode 6 and the opposing electrode 8.

In the DRAM manufacturing process, a substantially two-dimensional capacitor called a planar type capacitor is mainly used for a conventional DRAM having a storage capacity less than I Mb (megabytes). In the case of a DRAM having a memory cell using a planar type capacitor, electric charges are stored on the main surface of a semiconductor substrate, so that the main surface is required to have a large area. This type of a memory cell is therefore not suited to a DRAM having a high degree of integration. For a high 1 1 integration DR.AM such as a DRAM with more than 4Mb of memory, a three- dimensional capacitor, called a stacked-type or a trench-type capacitor, has been introduced.

With the stacked-type or trench-type capacitor, it has been made possible to obtain a larger memory in a similar volume. However, to realize a semiconductor device of an even higher degree of integration, such as a very-large- scale integration (VLSI) circuit having a capacity of 64Mb, a capacitor of such a simple three-dimensional structure as the conventional stacked- type or trench-type, turns out to be insufficient.

One solution for improving the capacitance of a capacitor is to use the so-called fin-type stacked capacitor, which is proposed by Ema et al., in "3-Dimensional Stacked Capacitor Cell for 16M and 64M DRAMs", International Electronic Devices Meeting, pp, 592-595, Dec. 1988. The fin-type stacked capacitor includes electrodes and dielectric films which extend horizontally in a fin shape in a plurality of stacked layers to increase the surface areas of the electrodes. DRAMs having the fin- type stacked capacitor are also disclosed in U.S. Patent Nos- 5,071,7833; 5,126,810, and 5,206,787.

Another solution for improving the capacitance of a capacitor is to use the so-called cylindrical-type stacked capacitor,'which is proposed by Wakarniya et al., in "Novel Stacked Capacitor Cell for 64-Mb DRAM," 1989 Symposium on VLSI Technology Digest of Technical Papers, pp. 69-70. The cylindrical-type stacked capacitor includes electrodes and dielectric films which extend vertically in a cylindrical shape to increase the surface areas of 20 the electrodes. A DRAM having the cylindrical-type stacked capacitor is also disclosed in U.S. Patent No 5,077,688.

2 With the trend toward increased integration density, the size of the DRAM cell in a plane (the area it occupies in a plane) must be further reduced. Generafly, a reduction in the size of the cell leads to a reduction in charge storage capacity (capacitance). Additionally, as the capacitance is reduced, the likelihood of soft errors arising from the incidence of alpha- rays is increased. Therefore, there is still a need in this art to design a new structure of a storage capacitor which can achieve the same capacitance, while occupying a smaller area in a plane, and a suitable method of fabricating the structure.

SUMMARY OF THE INVENTION

It is therefore an object of the invention to provide a semiconductor memory device 10 having a tree-type capacitor structure that allows an increased area for charge storage.

In accordance with one preferred embodiment of the invention, a semiconductor memory device having a capacitor is provided. The semiconductor memory device includes a substrate, a transfer transistor having source/drain regions, formed on the substrate, and a charge storage capacitor electrically coupled to one of the source/drain regions of the transfer transistor. The charge storage capacitor includes a trunk-like conductive layer having a bottom end electrically cbupled to one of the source/drain regions of the transfer transistor. The trunk-like conductive layer first extends substantially upnght from the bottom end for a certain distance and then extends in an outward direction substantially horizontally. The capacitor also includes at least a branch- like conductive layer substantially L-shaped in cross section. The branch-like conductive layer has one end connected to the upper surface of the trunk-like conductive layer. The trunk-like conductive layer and the branch-like conductive layer in combination form a storage electrode for the charge storage I 3 capacitor. A dielectric layer is formed over exposed surfaces of the trunk-like conductive layer and the branch-like conductive layer and an overlaying conductive layer covers the dielectric layer. The overlaying conductive layer serves as an opposing electrode of the charge storage capacitor.

In accordance with a second preferred embodiment of the invention, the trunk-like conductive layer is electrically coupled to one of the drain/source regions of the transfer transistor, and can be T-shaped or Ushaped in cross section. The branch-like conductive layer is of a hollow cylindrical shape in general.

In accordance with a third preferred embodiment of the invention, a semiconductor memory device having a capacitor is provided. The semiconductor memory device includes a substrate, transfer transistor having sourceldrain regions, formed on the substrate, and a charge storage capacitor electrically coupled to one of the source/drain regions of the transfer transistor. The charge storage capacitor includes a trunk-like conductive layer having a bottom end electrically coupled to one of the source/drain regions of the transfer transistor. The trunk-like conductive layer first extends substantially upright from the bottom end for a certain distance iind then extends in an outward direction substantially horizontally. The capacitor also includes at least one first branch-like conductive layer, each including a first segment and a second segment. The first segment has a first end connected tot lie upper surface of the trunk-like conductive layer and extending vertically upward. The second segment has one end connected to the second end of the first segment and extends horizontally. The trunk-like conductive layer and the first branch-like conductive layer in combination form a storage electrode of the charge storage capacitor. The capacitor further 1:1 - 4 includes a dielectric layer covering exposed surfaces of the trunk-like conductive layer and tht branch-like conductive layer, and an overlaying conductive layer on the dielectric layer, the overlaying conductive layer serving as an opposing electrode of the charge storage capacitor.

In accordance with a fourth preferred embodiment of the invention, the branch-like conductive layer further includes a second branch-like conductive layer having a pillar shape or a T-shaped cross section In accordance with a fifth preferred embodiment of the invention, the second segment of the first branch-like conductive layer extends horizontally from the other end of the first segment in an outward direction.

In accordance with a sixth preferred embodiment of the invention, the second segment of the first branch-like conductive layers extends horizontally from the other end of the first segment in an inward direction.

In accordance with a seventh preferred embodiment of the invention, the second segment of the first branch-like conductive layer extends horizontally from the other end of the first segment in a direction to%,ard another side of the same first segment.

BRIEF DESCRIPTION OF THE DRAWINGS

Other objects, features, and advantages of the invention will become apparent from the following detailed description of the preferred but non-limiting embodiments, The description is made with reference to the accompanying drawings, in which

Figure I is a circuit diagram of a memory cell of a DRAM device, Figures 2A through 2H are cross-sectional views illustrating a first embodiment of a semiconductor memory device according to the invention, and a niethod for fabricating the same according to the invention.

Figures 3 A through 3 E are cross-sectional views illustrating a second embodiment of a semiconductor memory device according to the invention, and a method for fabricating the same according to the invention, Figure 4 is a cross-sectional view illustrating a third embodiment of a semiconductor memory device according to the invention, and a method for fabricating the same according to the invention; Figures 5A through 5D are cross-sectional views illustrating a fourth embodiment of a semiconductor memory device according to the invention, and a method for fabricating the same according to the invention.

Figures 6A and 6B are cross-sectional views illustrating a fifth embodiment of a semiconductor memory device according to the invention, and a method for fabricating the same according to the invention; Figure 7 is a cross-sectiondl view illustrating a sixth embodiment of a semiconductor memory device according to the invention, and a method for fabricating the same according to the invention, and Figures 8A through 8E are cross-sectional views illustrating a seventh embodiment of a semiconductor memory device according to the invention, and a method for fabricating the same according to the invention.

Z1) 6 1 DESCRIPTION OF THE PREFERRED EMBODIMENTS First-Preferred Embodiment

A description will be given of a first embodiment of a semiconductor memory device having a tree-type charge storage capacitor according to the invention, by referring to 5 Figures 2A through 2H.

Referring to Figure 2A, a surface of a silicon substrate 10 is subjected to thermal oxidation by the LOCOS (local oxidation of silicon) technique, and thereby a field oxidation layer 12 having a thickness of approximately 3000A (Angstroms), for example, is formed. Next, a gate oxide layer 14 having a thickness of approximately 150A, for example, is formed by subjecting the silicon substrate 10 to the thermal oxidation process. Then a polysilicon layer having a thickness of approximately 2000A, for example, is deposited on the entire surface of the silicon substrate 10 by CVD (chen&al vapor deposition) or LPCVD (low pressure CVD). In order to obtain a polysillcon layer of low resistance, suitable impurities such as phosphorus ions, for example, are implanted into the polysilicon layer. Preferably, a refractory metal layer is deposited over the polysilicon layer, and then an annealing process is carried out tor form polycide, so that the layer's resistance is further decreased. The refractory metal may be tungsten (W), and its thickness is, for example, approximately 2000A. Thereafter, the polycide is subjected to a patterning process to form gate electrodes (or word lines) VvrL I through WL4, as shown in Figure 2A. Then, arsenic ions, for example, are implanted into the silicon substrate 10 at an energy of 70 KeV and a dosage of approximately I X 10'5 atoms/cm2, for example. In this step, the word lines WL I 7 through WI-4 are used as masking layers. As a result, drain regions l6a and l6b and source regions I 8a and l8b are formed in the silicon substrate 10.

Referring next to Figure 2B, in the subsequent step CVD is performed to deposit an insulating layer 20 of, for example, borophosphosilicate glass (BPSG), to a thickness of approximately 7000A, for example. Then the same method is used to form an etching protection layer 22, which can be, for example, a silicon nitride layer, having a thickness of approximately I OOOA, for example. After that, a conventional photolithography and etching processIs performed to etch selected parts of the etching protection layer 22, the insulating layer 20, and the gate oxide layer 14, so as to form storage electrode contact holes 24a, 24b which extend from the top surface of the etching protection layer 22 to the top surface of the drain regions 16a and 16b. Next, CVD is performed to deposit a polysiliCon layer 26 over the surface of the etching protection layer 22. To increase the conductivity of the polysillcon layer 26, arsenic ions, for example, can be implanted into the polysillcon layer 26. As shown in the drawing, the storage electrode contact holes 24a, 24b are filled by the polysillcon layer 26, and the polysillcon layer 26 further covers the surface of the etching protection layer 22 Thereafter, a thick insulating layef 28 of, for example, silicon dioxide, is deposited over the surface of the polysilicon layer 26 to a thickness of approximately 7000A.

Referring next to Figure 2C, in the subsequent step CVD is performed to successively deposit an insulating layer and a sacrificial polysilicon layer. Then, a conventional photolithography and etching process is performed to etch away selected portions of the insulating layer and the sacrificial polysillcon layer, so as to form solid cylindrical insulating layers 30a, 301) and sacrificial polysilicon layers 32a, 32b as shown in 8 the drawing. The insulating layers 330a, 30b can be, for example, silicon nitride layers deposited to a thickness of approximately I OOOA. The thickness of the sacrificial polysificon layers 32a, 32b can be approximately 1000A, for example. The insulating layer 330a and the sacrificial polysilicon layer 32a in combination form a stack layer 30a, 32a which is preferably located above the corresponding drain region l6a. Similarly, the insulating layer 30b and the sacrificial polysilicon layer 32b in combination form another stack layer 330b, 32b, which is preferably located above the corresponding drain region l6b.

Referring next to Figure 21), in the subsequent step, silicon dioxide spacers 'Aa and 34b are formed on the sidewalls of the stack layers 20a, 32a and 30b, 32b, respectively. In this embodiment, the silicon dioxide spacers 34a and 34b can be formed by the following steps: first, depositing a silicon dioxide layer to a thickness of approximately I OOOA, for example, then etching back the silicon dioxide layer. After that, CVD is performed to deposit an insulating layer 36, for example, a silicon nitride layer, to a thickness of approximately 2000A, for example. Then, a chemical-mechanical polishing (CNV) technique is used to polish the insulating layer 36 until the top surfaces of the stack layers 30a, 32a and 30b, 32b are exposed.

Referring next to Figure 2E, in the subsequent step the silicon dioxide spacers 3)4a and ')4b are etched away using the stack layers 30a, _3)2a and 30b, _32b and the insulating layer 36 as masking, layers. Thereafter, with the same stack layers 30a, 32a and 30b, 32b and the insulating layer 3 3 6 as masks, the insulating layer 28 is etched until the surface of the polysilicon layer 26 is exposed. Then, using the sacrificial polysilicon layers 32a, 32b as masks, the insulating layer 336 is removed. Thus, openings 38a and 338b are formed.

9 Referring next to Figure 2F, in the subsequent step a polysilicon layer 40 is deposited on the surfaces of the stack layers 30a, 32a and 30b, 32b and the insulating layer 28 to a thickness of approximately I OOOA, for example, and also filling the openings 38a and 38b, To increase the conductivity of the polysillcon layer 40, arsenic ions, for example, can be 5 implanted into the polysilicon layer 40. Then, the polysilicon layer 40 and the sacrificial polysillcon layers _3)2a, 32b are polished by CMP until the top surfaces of the insulating layers 3 )Oa, 30b are exposed.

Referring next to Figure 2G, in the subsequent step, with the polysillcon layer 40 as a mask, wet etching is performed so as to remove the insulating layers 30a, 30b and then the insulating layer 28 below. Thereafter, a conventional photolithography and etching process is performed to etch, in sequence, the polysilicon layer 40, the insulating layer 28, and the polysilicon layer 26, so as to define the storage electrodes of the charge storage capacitors in each memory unit. Through the aforementioned steps, the polysilicon layers 40 and 26 are divided into sections 40a, 40b and 26a, 26b. Then, a wet etching process is again performed on the wafer with the etching protection layer 22 as the etch end point, so as to remove the remainder of the insulating layer 28. The fabrication of the storage electrodes of the charge storage capacitors in the DRAM is thus complete. As shown in Figure 2G, each storage electrode includes a trunk-like polysilicon layer 26a/26b and a branch- like polysillcon layer 40a/40b having an L-shaped cross section. The trunk-like polysilicon layers 26a, 26b are electrically coupled to the drain regions 16a and l6b of the transfer transistors in the DR-AM, respectively, and each have a T-shaped cross section. The branch-like polysillcon layers 40a, 40b generally have a hollow cylindrical shape, although the horizontal cross section can be circular, rectangular, or any other shape, depending on the shapes of the respective stack layers 30a, 32a and 30b, 32b.

The branch-like polysilicon layers 40a and 40b first extend vertically upward from the upper surfaces of the trunk-like polysilicon layers 26a, 26b for a certain distance, and then extend horizontally in an outward direction. Due to the particular shape of the storage electrode of the capacitor of the invention, the storage electrodes are hereinafter referred to as "tree-like storage electrodes", and the capacitors thus constructed are referred to as "tree- tyPe charge storage capacitors".

Referring next to Figure 211, in the subsequent step dielectric films 42a, 42b are respectively formed over the exposed surfaces of storage electrode 26a, 40a, and 26b, 40b.

The dielectric films 42a, 42b can be formed of, for example, silicon dioxide, silicon nitride, NO (silicon nitridelsilicon dioxide), ONO (silicon dioxide/silicon nitridelsilicon dioxide), or the like. Next, an opposing electrode 44 of polysilicon is formed over the surfaces of dielectric films 42a, 42b. The process for forming the opposing electrode 44 includes a first step of depositing a polysilicon layer by CV1) to a thickness of, for example, approximately 1 OOOA, a second step of difrusing N-type impurities into the polysilicon layer so as to increase the conductivity, and a third step of performing a conventional photolithography and etching process to etch away selected parts of the polysilicon layer. The fabrication of the tree-type charge storage capacitor in the DRAM is then complete.

Although not shown in Figure 2H, to complete the fabrication of the DRAM chip, subsequent steps Include fabricating bit lines, bonding pads, interconnections, passivations, and packaging. These steps involve only conventional techniques and are not included 1 1 within the spirit and scope of the invention, so a detailed description will not be provided herein.

Second Preferred Embodiment In the foregoing first embodiment, the trunk-like polysilicon layer has a solid structure with a T-shaped cross section. In the following embodiment, a different fabricating method is used to form a storage electrode with a different structure in which the trunk-like polysilicon layer has a hollow structure, so as to increase the surface area of the storage electrode.

Figures 3A through 3E illustrate a second embodiment of a semiconductor memory device having a tree-type charge storage capacitor according to the invention- This embodiment of the semiconductor memory device can be produced by a second preferred method for fabricating a semiconductor memory device according to the invention.

The tree-type storage electrode of the second embodiment is based on the wafer structure of Figure 2A, using a different fabricating method to produce a DRAM storage electrode with a different structure. Elements in Figures 3A through 33E that are identical to those in Figure 2A are labeled with the same numerals.

Referring to Figure 3A together with Figure 2A, CVD is performed to deposit an insulating layer 46, for example, BPSG, to a thickness of approximately 7000A. Then, an etching protection layer 48 of, for example, silicon nitride is deposited, having a thickness of approximately I OOOA. Thereafter, a conventional photolithography and etching process Is C, performed to etch selected portions of, in sequence, the etching protection layer 48, the 12 insulating layer 46, and the gate oxide layer 14, so as to form storage electrode contact holes 50a and 50b which extend from the top surface of the etching protection layer 48 to the top surface of the drain regions l6a and l6b. Next, a polysilicon layer 52 is deposited on the etching protection layer 48. Then, a thick insulating layer 54, for example, a silicon dioxide layer, is deposited on the surface of the polysilicon layer 52 to a thickness of approximately 7000A. CVD is again performed to deposit an insulating layer and a sacnficial polysilicon layer successively on top of the insulating layer 54, and then a conventional photolithography and etching process is performed to define the insulating layer and the sacirificial polysilicon layer, so as to form the insulating layer 56 and the sacirificial polysilicon layer 58 as shown in the drawing. The insulating layer 56 can be, for example, a silicon nitride layer deposited to a thickness of approximately I OOOA, for example. The insulating layer 56 and the sacfificial polysilicon layer 58 in combination form a stack layer 56, 58, which is preferably located above and in a position in between two adjacent charge storage capacitors.

Referring next to Figure 3B, in the subsequent step silicon dioxide spacers 60a and 60b are formed on the respective sidewalls of the stack layer 56, 58. In this embodiment, the silicon dioxide spacers 60a and 60b can be formed by the following steps first, depositing a silicon dioxide layer to a thickness of approximately 1000A, then etching back the silicon dioxide layer. Thereafter, CVD is performed to deposit an insulating layer 62, for example, a silicon nitride layer to a thickness of approximately 2000A. Then, CMP is performed, to polish the insulating layer 62 until at least the upper surface of the stack layer 56, 58 Is exposed.

13 Referring next to Figure 3C, in the subsequent step, using the stack layers 56, 58 and insulating layer 62 as etching masks, the silicon dioxide spacers 60a and 60b are etched away. After that, again with the stack layers 56, 58 and the insulating layer 62 as the etching masks, the insulating layer 54 is etched until the surface of the polysilicon layer 52 is reached. Then, using the sacrificial polysilicon layer 58 as an etching mask, the insulating layer 62 is etched away. Thus, openings 61 and 64b are formed.

Referrin :, next to Figure 3)D, a layer of polysillcon 66, for example, having a thickness of approximately I OOOA, is deposited on the surfaces of the stack layers 56, 58 and the insulating layer 54, and also filling openings 64a and 64b. Then, CNIP is performed to polish the polysilicon layer and the sacrificial polysilicon layers 58 until at least the upper surface of the insulating layer 56 is exposed, so as to form polysilicon layers 66a and 66b.

To increase the conductivity of the polysilicon layers, arsenic ions, for example, can be implanted into the polysilicon layers.

Referring next to Figure 3E, in the subsequent step, using the polysilicon layers 66a and 66b as masks, a wet etching process is performed to remove successively the insulating layer 56 and the insulating layer 54 below. Thereafter, a conventional photolithography and etching process is performed to etch the polysilicon layers 66a, 66b and the polysilicon layer 52, so as to define the storage electrodes of the charge storage capacitors in each memory unit The polysilicon layers 66a, 66b are etched above respective drain regglons 16a, l6b.

The polysilicon layer 52 is etched between the drain regions l6a, 16b. Through the aforementioned steps, the polysilicon layers 66a, 66b and 52 are divided into sections 66a, 66b and 52a, 52b. Then, a wet etching process is again performed on the wafer using the 14 etching protection layer 48 as the etch end point. so as to remove the remainder of the insulating layer 54. The fabrication of the storage electrodes of the charge storage capacitors In the DRAM is thus complete. As shown in Figure 3E, the storage electrode includes a trunk-like polysilicon layer 52a/52b and a branch-like polysilicon layer 66a/66b having an L-shaped cross section. The trunk-like polysilicon layers 52a, 52b are electrically coupled to the drain regions 16a and l6b of the transfer transistors in the DRAM, respectively, and have a U-shaped cross section. The branch-like polysillcon layers 66a, 66b generally have a hollow cylindrical shape, although the horizontal cross section can be circular, rectangular, or any other shape. The branch-like polysilicon layers 66a, 66b first extend vertically up a certain distance from the upper peripheral surface of the trunk-like polysilicon layers 52a, 52b, and then extend horizontally in an inward direction. Subsequent processing steps do not differ from conventional processes, and therefore are not described herein.

Third Preferred Embodiment The foregoing first and second embodiments have branch-like electrode layers with L-shaped cross sections. In cross section, the branch-like electrode layers form two such branches. However, the invention is not limited to such a configuration. The number of L-shaped branches shown in a cross section of the branch-like electrode layer can be just one. In the following embodiment, a storage electrode having a branch- like electrode having a single L-shaped cross section branch is described.

Figure 4 shows a third embodiment of a semiconductor memory device having a tree-type charge storage capacitor according to the invention. This embodiment of the semiconductor memory device can be produced by a third preferred method for fabricating a semiconductor memory device according to the invention.

The tree-type storage electrode of the third embodiment is based on the wafer structure of Figure 3D, and uses a different fabricating method to produce a DRAM storage electrode with a different structure. Elements in Figure 4 that are identical to those in Figure)D are labeled with the same numerals.

Referring to Figure 3D together with Figure 4, with polysilicon layers 66a, 66b as masks, a wet etching process is performed to remove, in sequence, the insulating layer 56 and the insulating layer 54 below. Thereafter, a conventional photolithography and etching process is performed to etch the polysilicon layers 66a, 66b and the polysilicon layer 52, so as to define a storage electrode of the charge storage capacitor in each memory unit. The polysilicon layers 66a, 66b are etched to remove a vertical end of each layer. The polysilicon layer 52 is etched to remove a portion between drain regions 16a, l6b. Through the aforementioned steps, the polysiliton layer 52 is divided into sections 52a and 52b, and the polysillcon layers 66a and 66b have only one end connected to the respective polysillcon layers 52a and 52b. Then, a wet etching process is again performed, using the etching protection layer 48 as the etch end point, to remove the remaining insulating layer 54. The fabrication of the storage electrodes of the charge storage capacitors in the DRAM is thus complete As shown in Figure 4, the storage electrode includes a trunk-like polysilicon layer 52a/52b, and a branch-like polysilicon layer 66a/66b having an L-shaped cross section. The 16 trunk-like polysilicon layers 52a, 52b are electrically coupled to the drain regions l6a and l6b of the transfer transistors in the DRAM,respectively, and have T-shaped cross sections. The branch-like polysilicon layers 66a, 66b each have only a single branch with an Lshaped cross section and first extend vertically up a certain distance from the upper peripheral edge of the trunk-like polysillcon layers 52a, 52b, and then extend horizontally toward another peripheral edge of the respective trunk-like polysilicon layer 52a, 52b. Subsequent processing steps do not differ from conventional processes, and therefore are not further described here.

Fourth Preferred Embodiment In the foregoing first, second, and third embodiments, the storage electrode has only a single branch-like electrode layer with an L-shaped cross section. However, the number of branch-like electrode layers with L- shaped cross sections is not limited tojust on, and can be two, three, or more for each storage electrode. In the following embodiment, a storage electrode with two branch-like electrode layers, each having an L-shaped cross section, is described- Figures 5A through 5D illustrate a fourth embodiment of a semiconductor memory device having a tree-type charge storage capacitor according to the invention. This embodiment of the semiconductor memory device can be constructed by a fourth preferred method for fabricating a semiconductor memory device according to the invention.

The tree-type storage electrode of the fourth embodiment is based on the wafer structure of Figure 2F, using a different fabricating, method to produce a DRAM storage 17 electrode with a different structure. Elements in Figures 5A through 5D that are identical to those in Figure 2F are labeled with the same numerals.

Referring to Figure 2F together with Figure 5A, in the subsequent step, using the polysilicon layer 40 as mask, a wet etching process is performed to remove the insulating layers 30a, 30b. Thereafter, an insulating layer 68 of, for example, silicon dioxide, is deposited on the surfaces of polysillcon layer 40 and the insulating layer 28. Then, an insulating layer and a sacrificial polysillcon layer are sequentially deposited on the surface of insulating layer 68- Using a conventional photolithography and etching process, the insulating layer and the sacrificial polysilicon layer are defined so as to form the insulating layers 70a, 70b and sacrificial polysilicon layers 72a, 72b shown in the drawing. The insulating layers 70a, 70b can be, for example, a silicon nitride layer deposited to a thickness of approximately 1000A. The sacrificial polysilicon layers 72a, 72b are disposed to a thickness of approximately I OOOA, for example. The insulating layer 70a and the sacrificial polysilicon layer 72a together form a stack layer 70a, 72a, which is preferably located above the corresponding drain region 16a. Similarly, the insulating layer 70b and the sacrificial polysilicon layer 72b together forffi another stack layer 70b, 72b, which is preferably located above the corresponding drain region 16b. Next, silicon dioxide spacers 74a and 74b are formed on the respective sidewalls of the stack layers 70a, 72a, and 70b, 72b In this embodiment, the silicon dioxide spacers 74a and 74b can be formed by the following steps first, depositing a silicon dioxide laver to a thickness of approximately I OOOA, for example, then etching back the silicon dioxide layer.

18 Referring next to Figure 5B, in the subsequent step CVD is performed to deposit an insulating layer 76 of, for example, silicon nitride to a thickness of approximately 2000A. Then, CMP is performed to polish the insulating layer 76 until at least the top surfaces of the stack layers 70a, 72a and 70b, 72b are exposed. After that, using the stack layers 70a, 72a and 70b, 72b an d the insulating layer 76 as etching masks, the silicon dioxide spacers 74a and 74b are removed by etching. Then, using the stack layers 70a, 72a and 70b, 72b and the insulating layer 76 as etching masks again, the insulating layers 68 and 28 are etched Limit tile surface of the polysilicon layer 26 is reached, so as to form openings 78a and 78b.

Referring next to Figure 5C, in the subsequent step, using the sacrificial polysilicon layers 72a, 72b as etching masks, the insulating layer 76 is removed by etching. Then, a polysilicon layer 80 is deposited on the surfaces of the stack layers 70a, 72a and 70b, 72b and the insulating layer 68, to a thickness of approximately I OOOA, for example, also filling the openings 78a and 78b. To increase the conductivity of the polysilicon layer 80, arsenic ions, for example, can be implanted into the polysilicon layer 80. Next, CIVT is performed to polish the polysilicon layer 80 and the sacrificial polysilicon layers 72a, 72b until at least the top surfaces of the insulating layeis 70a, 70b are exposed. Then, using the polysilicon layer 80 as a mask, wet etching is performed to remove, in sequence, the insulating layers 70a, 70b and the insulating layers 68 and 28 below. Referring next to Figure 5D, in the subsequent step a conventional photolit hog raptly Z- and etching process is performed to successively etch the polysilicon layer 80, the insulating layer 68, the polysificon layer 40, the insulating layer 28, and the polysillcon layer 26, so as to define a storage electrode of the charge storage capacitor in each memory unit, That is, 19 through the aforementioned steps, the polysificon layers 80, 40, and 26 are divided into sections 80a, 80b; 40a, 40b; and 26a, 26b as shown in the drawing. Next, a wet etching process is performed to remove the remaining insulating layers 68 and 28, using the etching protection layer 22 as the etch end point. The fabfication of a storage electrode of a charge storage capacitor in a DRAM is thus complete. As shown in Figure 51), the storage electrode includes a trunk-like polysillcon layer 26a/26b and two branch-like polysilicon layers 80a/80b and 40a/40b, each having an Lshaped cross section. The trunk-like polysillcon layers 26a, 26b are electrically coupled to the drain regions l6a and l6b of the transfer transistors in the DRAM, respectively, and have T-shaped cross sections. The two branch-like polysilicon layers 80a, 80b and 40a, 40b are in general parallel to each other and have hollow cylindrical shapes, and horizontal cross sections that can be circular, rectangular, or any other shape. The branch-like polysilicon layers 80a, 80b and 40a, 40b respectively extend vertically upward from the upper surface of the polysilicon layers 26a, 26b for a certain distance, then extend horizontally in an outward direction. Subsequent processing steps do not differ from conventional processes, and are therefore not described herein. If more than two branch-like electrode layers are required, further branches can be produced by the repeated application of stack layer formations according to the process described in connection with this embodiment.

Fifth Preferred Embodiment In the foregoing first through fourth embodiments, the branch-like electrode layers of the storage electrode all have L-shaped cross sections. However, the invention is not limited to such a shape. The branch-like electrode layers of the storage electrode can have various other cross-sectional shapes. In the following embodiment, one branch-like electrode layer of the storage electrode has an L-shaped cross section, while another has a T-shaped cross section.

Figures 6A and 6B illustrate a fifth embodiment of a semiconductor memory device having a tree-type charge storage capacitor according to the invention. This embodiment of the semiconductor memory device can be constructed by a fifth preferred method for fabricating a semiconductor memory device according to the invention.

The tree-type storage electrode of the fifth embodiment is based on the wafer structure of Figure 2F, using a different fabricating method to produce a DRAM storage electrode with a different structure. Elements in Figures 6A and 6B that are identical to those in Figure 2F are labeled with the same numerals.

Referring to Figure 2F together with Figure 6A, in the subsequent step, using the polysilicon layer 40 as a mask, wet etching is performed to remove the insulating layers 30a, 3)Ob. Then, CVD is performed to deposit an insulating layer 82, for example, a silicon dioxide layer, on the surfaces of the insulating layer 28 and the polysilicon layer 40.

Thereafter, a conventional photolithography and etching process is performed to etch selected parts of, in sequence, the insulating layer 82 and the insulating layer 28 until the surface of the polysilicon layer 26 is reached, thereby forming openings 84a and 84b. The openings 84a and 84b are preferably respectively located in positions above the corresponding drain regions l6a and 16b. Next, CVD is performed to deposit a polysilicon layer 86, for example, to a thickness of approximately I OOOA, on the surface of the 21 insulating layer 82, so as to fill the openings 84a and 84b. To increase the conductivity of the polysilicon layer 86, arsenic ions, for example, can be implanted into the polysilicon layer 86.

Referring next to Figure 6B, in the subsequent step a conventional photolithography and etching process is performed to etch, in sequence, the polysillcon layer 86, the insulating layer 82, the polysilicon layer 40, the insulating layer 29, and the polysilicon layer 26, so as to define a storage electrode of the charge storage capacitor in each memory unit. Through the aforementioned steps, the polysilicon layers 86, 40, and 26 are divided into sections 86a, 86b; 40a, 40b; and 26a, 26b, as shown in the drawing. Next, a wet etching process Is performed using the etching protection layer 22 as the etch end point, to remove the insulating layers 82 and 28. The fabrication of the storage electrodes of the charge storage capacitors in the DRAM is thus complete. As shown in Figure 6B, the storage electrode includes a trunk-like polysilicon layer 26a/26b, a branch-like polysilicon layer 40a/40b having an L-shaped cross section, and another branch-like polysillcon layer 86a/86b having a T- shaped cross section. The trunk-like polysilicon layers 26a, 26b are electrically coupled to the drain regions 16a and l6b of the transfer transistors in the DRAM, respectively, and have a T-shaped cross section, The branch-like polysilicon layers 40a, 40b having an L-shaped cross section generally have a hollow cylindrical shape, although the horizontal cross section can be circular, rectangular. or any other shape. The branch-like polysilicon layers 40a, 40b extend vertically up a certain distance from the top surface of the trunk-like poiysilicon layers 26a, 26b, and then extend horizontally in an outward direction. The vertical sections of the branch-like polysilicon layers 86a, 86b generally have a hollow cylindrical shape, although the horizontal cross section can be circular, rectangular, or any other shape The branch-like polysilicon layers 86a, 86b extend vertically up a certain distance from the top surface of the trunk-like polysilicon layers 26a, 26b, and then extend horizontally in an outward direction.

Sixth Preferred Embodiment In the following sixth embodiment, a different method is used to form a storage electrode having a different structure. The structure of the storage electrode of this 0 embodiment is very similar to that of the fifth embodiment. The difference lies In the branch-like polysilicon layer, which in this embodiment has a pillar structure instead of a T-shaped cross section, as in the fifth embodiment.

The tree-type storage electrode of the sixth embodiment is based on the wafer structure of Figure 6A, using a different fabricating method to produce a DRAM storage electrode with a different structure. Elements in Figure 7 that are identical to those in Figure 6A are labeled with the same numerals.

Referring to Figure 6A together with Figure 7, CNW is used to polish the polysilicon layer 86 until at least the top surface of the insulating layer 82 is exposed, so as to form pillar polysilicon layers 88a and 88b as shown in the drawing, Thereafter, a wet etching process Is performed using the polysilicon layer 40 as a mask to remove the insulating layer 82 and the exposed portion of the insulating layer 28. A conventional photolithigraphy and etching process is then performed to etch, in sequence, selected portions of the polysilicon layer 40, the insulating layer 28, and the polysilicon layer 26, until the surface of the etching protection layer 22 is exposed. A storage electrode of the charge storage capacitor in each 2 3) 1 memory unit is thus defined. Through the aforementioned steps, the polysilicon layers 40 and 26 are divided into sections 40a, 40b, and 26a, 26b as shown in the drawing. Next, using the etching protection layer 22 as the etch end point, a wet etching process is again performed to etch away the insulating layer 28. The fabrication of the storage electrodes of the charge storage capacitors in the DRAM is thus complete. As shown in Figure 7, the storage electrode includes a trunk-like polysilicon layer 26a/26b, one branch-like polysilicon layer 40a/40b having an L-shaped cross section, and a pillar-shaped branch-like polysillcon layer 88a/88b. The trunk-like polysillcon layers 26a, 26b are electrically coupled to the respective drain regions 16a and l6b of the transfer transistors in the DRAM. The branch- like polysillcon layers 40a, 40b that have an L-shaped structure generally have a hollow cylindrical shape, although the horizontal cross section can be circular, rectangular, or any other shape. The branch-like polysilicon layers 40a, 40b extend vertically upward a certain distance from the top surface of the trunk-like polysilicon layers 26a, 26b, and then extend horizontally in an outward direction. The pillar-shaped branch-like polysilicon layer 88a, 88b extend vertically upward from the top surface of the trunk-like polysillcon layers 26a, and have a horizontal cross sectloh that can be circular, rectangular, or any other shape.

Seventh Preferred Embodiment In the foregoing first through sixth embodiments, the bottom surface of the horizontal portion of the trunk-like polysilicon layer touches the etching protection layer, and also CM.P is used in the removal and sectioning of the polysilicon layer above the stack C.

layers. However, the invention is not limited to the above. In the following embodiment, the 24 bottom surface of the horizontal portion of the trunk-like polysilicon layer is separate from the etching protection layer below by a certain distance, so as to increase the surface area of the storage electrode. Also, an alternative technique, such as using a conventional photolithigraphy and etching process to divide the polysilicon layer above the stack layer, is 5 described.

Figures 8A through 8E illustrate a seventh embodiment of a semiconductor memory device having a tree-type charge storage capacitor according to the invention. This embodiment of the semiconductor memory device is produced by a seventh preferred method for fabricating a semiconductor memory device according to the invention.

The tree-type storage electrode of the seventh embodiment is based on the wafer structure of Figure 2A, using a different fabrication method to produce a DRAM storage electrode with a different structure. Elements in Figures 8A through 8E that are identical to those in Figure 2A are labeled with the same numerals.

Referring to Figure 2A, together with Figure 8A, CVD is performed to deposit an insulating layer 90, an etching protection layer 92, and an insulating layer 94. The insulating layer 90, for example, can be a BPSG layer deposited to a thickness of approximately 7000A. The etching protection layer 92, for example, can be a silicon nitride layer deposited to a thickness of approximately I OOOA. The insulating layer 94, for example, can be a silicon dioxide layer deposited to a thickness of approximately I OOOA. Thereafter, a conventional photolithigraphy and etching process is performed to selectively etch, in sequence, the insulating layer 94, the etching protection layer 92, the insulating layer 90, and the gate oxide layer 14. As a result, storage electrode contact holes 96a and 96b are formed. The storage electrode contact holes 96a and 96b extend from a top surface of the insulating layer 94 to a top surface of the drain regions 16a and 16b, respectively. A polySilicon layer is then deposited on the surface of the insulating layer 94 and filling the storage electrode contact holes 96a and 96b. After that, a conventional photo] ithigraphy and etching process is again performed to define the polystlicon layer, so as to form the polysilicon layer 98 as shown in the drawing. To increase the conductivity of the polysilicon layer, arsenic ions, for example, can be implanted into the polysilicon layer. As shown in Figure 8A, the polysilicon layer 98 fills the'storage electrode contact holes 96a and 96b and also covers the surface of the insulating layer 94. Next, an insulating layer 100, for example, a silicon dioxide layer, is deposited on the surface of the polysilicon layer 98 to a thickness of approximately 7000A.

Referring next to Figure 8B, in the subsequent step an insulating layer and a sacrificial polysilicon layer are deposited successively on the surface of the insulating layer 100. Then, a conventional photolithography and etching process is performed to define the insulating layer and the sacrificial polysilicon layer, so as to form solid cylindrically-shaped insulating layers 102a, 102b and sacrificial polysilicon layers 104a, 104b, as shown in the drawings. The horizontal cross se.tions of the insulating layers 102a, 102b and the sacrificial polysilicon layers 104a, 104b can be circular, rectangular, or any other shape. The insulating layers 102a, 102b can be, for example, silicon nitride layers deposited to a thickness of approximately 1000A. The sacrificial polysilicon layers 104a, 104b are deposited to a thickness of approximately I OOOA, for example. The insulating layer 102a together with the sacrificial polysilicon layer 1 04a form a stack layer 1 02b, 104b, which is preferably located in a position above the corresponding drain region 16b. Likewise, the 26 1 insulating layer 102b together with the sacrificial polysillcon layer 104b form a stack layer 102b, 104b, which is preferably located in a position above the corresponding drain regions l6b. Next, silicon dioxide spacers 106a, 106b are formed on the sidewalls of the stack layers 102a, 104a, and 102b, 104b, respectively. In this embodiment, the silicon dioxide spacers 106a and 106b can be formed by the following steps: first, depositing a silicon dioxide layer to a thickness of approximately I OOOA, for example, followed by etching back the sili 0 1 icon dioxide layer. Thereafter, CVD is performed to deposit an insulating layer 108, for example, a silicon nitride layer to a thickness of approximately 2000A. Then, CNT is performed to polish the insulting layer 108, until at least the top surface of the stack layers 102a, 104a, and 102b, 104b is exposed.

Referring next to Figure 8C, in the subsequent step, using the stack layers 102a, 104a and 102b, 104b and the insulating layer 108 as etching masks, the silicon dioxide spacers 106a and 106b are removed by etching. Then, using the same stack layers 102a, 104a, and 102b, 104b and the insulating layer 108 as etching masks, the insulating layer 100 is etched until the surface of the polysilicon layer 98 is reached. Next, using the sacrificial polysillcon layers 104a, 104b as etching masks, the insulating layer 108 is removed by etching. Thus, openings I l0a and I 10b are formed- Referring next to Figure 8D, in the subsequent step a polysificon layer 112 is deposited on the surfaces of the stack layers 102a, 104a and 102b, 104b and the insulating layer 100, for example, to a thickness of approximately I OOOA, and also to fill up the openings I 00a and I I Ob. To increase the conductivity of the polysificon layer 112, arsenic ions, for example, can be implanted into the polysillcon layer 112. After that, a conventional 27 photolithigraphy and etching process is performed to define the polysilicon layer 112 and the sacrificial polysillcon layers 104a, 104b. As a result, the portions above the insulating layers 102a, 102b are divided to form the structure shown in the drawing.

Referring next to Figure 8E, in the subsequent step, using the polysillcon layer 112 and the sacrificial polysilicon layers 104a, 104b as masks, a wet etching process is performed to etch away the insulating layers 102a, 102b and the insulating layer 100 below, in sequence. Thereafter, a conventional photolithigraphy and etching process is performed to etch, in sequence, the polysillcon layer 112, the insulating layer 100, and the polysilicon layer 98, so as to define a storage electrode of the charge storage capacitor for each memory unit.

Through the above steps, the polysilicon layers 112 and 98 are divided into sections I I 2a, I 12b and 98a, 98b. Next, using the etching protection layer 92 as the etch end point, a wet etching process is again performed to remove the insulating layers 100 and 94. The fabrication of a storage electrode of the charge storage capacitor in the DRAM is thus complete. As shown in Figure 8E, the storage electrode includes a trunklike polysilicon layer 98a/98b and a branch-like polysilicon layer I l2a/I 12b having a T- shaped cross section. The trunk-like polysillcon layers 98a, 98b are electrically coupled to the respective drain regions l6a, 16b of the transfer transistors in the DRAM. A distance is maintained between the bottom surfaces of the horizontal section of the trunk-like polysillcon layers and the top surfaces of the etching protection layer 92, so as to increase the surface area of the storage electrode. The branch-like polysillcon layers I I 2a, I I 2b generally have a hollow cylindrical shape, although the horizontal cross section can be circular, rectangular, or ally other shape. The branch-like polysillcon layers I I 2a, I 12b extend vertically upward a 28 1 certain distance from the top surfaces of the trunk-like polysillcon layers 98a, 98b, and then extend horizontally in an outward direction.

It will be apparent to those skilled in the art of semiconductor fabrication that the foregoing disclosed embodiments can be applied either alone or in combination so as to provide storage electrodes of various sizes and shapes on a single DRAM chip. These variations are all contemplated to be within the scope of the invention.

AJthough in the accompanying drawings, the embodiments of the drains of the transfer transistors are based on diffusion areas in a silicon substrate, other variations, for example trench-type drain regions, are possible.

Elements in the accompanying drawings are schematic diagrams for demonstrative purpose only and therefore are not depicted to an actual scale. The shapes, dimensions, and extension angles of the elements of the invention as shown are not limitations on the scope of the invention.

While the invention has been described by way of example and in terms of preferred embodiments, it is to be understood that the invention is not limited to the disclosed embodiments. To the contrary, it is intended to cover various modifications and similar arrangements as would be apparent to those sHled in the art. Therefore, the scope of the appended claims should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements.

29

Claims

What is claimed is: 1. A semiconductor memory device, comprising: a

substrate a transfer transistor having source/drain regions, formed on the substrate, and a charge storage capacitor electrically coupled to one of the source/dral I in regions of the transfer transistor, wherein the charge storage capacitor further includes a trunk-like conductive layer having a bottom end electrically coupled to said one of the source/drain regions of the transfer transistor, wherein the trunk-like conductive layer extends substantially upright from the bottom end for a certain distance to an upper point, and extends in an outward direction, substantially horizontally from the upper point; at least a branch-like conductive layer substantiafly L-shaped in cross is section, wherein the branch-like conductive layer has a first end connected to a top surface of the trunk-like conductive layer, and the trunk-like conductive layer and the branch-like conductive layer in combination form a storage electrode of the charge storage capacitor, a dielectric layer over exposed surfaces of the trunk-like conductive layer and the branch-like conductive layerldrid an overlaying conductive layer over the dielectric layer, the overlaying conductive layer serving as an opposing electrode of the charge storage capacitor.

2. A semiconductor memory device according to claim 1, wherein the trunklike 20 conductive layer has a T-shaped cross section.

A serniconductor memory device according to claim 1, wherein the trunklike conductive layer has a U-shaped cross section.

1 4, A semiconductor memory device according to claim 2, wherein the first branch- C.

like conductive layer is connected to the top surface of the trunk-like conductive layer.

5. A semiconductor memory device according to claim 3, wherein the first end of the branch-like conductive layer is connected to the top surface of the trunk-like conductive 5 layer.

6. A semiconductor memory device according to claim 1, wherein the branchlike conductive layer has a hollow cylindrical shape.

7. A semiconductor memory device according to claim 1, wherein the at least a branch-like conductive layer includes two branch-like conductive layers running substantially parallel to each other, wherein each branch-like conductive layer has an Lshaped cross section and a first end of each branch-like conductive layer is connected to the top surface of the trunk-like conductive layer.

8. A semiconductor memory device, comprising:

a substrate; a transfer transistor having source/drain regions, formed on the substrate, and a charge storage capacitof electrically coupled to one of the source/drain of the transfer transistor, wherein the charge storage capacitor further includes: a trunk-like conductive layer having a bottom end electrically coupled to said one of the source/drain regions of the transfer transistor, wherein the trunk-like conductive layer extends substantially upright from the bottom end for a certain distance to an upper point and extends in an outward direction, substantially horizontally, from the upper point, 31 Irl a first branch-like conductive layer, including a first segment and a second 1 segment, wherein the first segment has a first end connected to a top surface of the trunk-like conductive layer and extending vertically upward to a second end, the second segment has a first end connected to the second end of the first segment and extending horizontally, and the trunk-like conductive layer and the first branch-like conductive layer In combination form a storage electrode of the charge storage capacitor,.

a dielectric layer covering exposed surfaces of the trunk-like conductive layer and the branch-like conductive layer, and an overlaying conductive layer over the dielectric layer, the overlaying conductive layer serving as an opposing electrode of the charge storage capacitor.

9. A semiconductor memory device according to claim 8, wherein the trunklike conductive layer has a T-shaped cross section.

10. A semiconductor memory device according to claim 8, wherein the trunklike conductive layer has a U-shaped cross section.

11. A semiconductor memory device according to claim 8, wherein the first branch-like conductive layer has ai hollow cylindrical shape.

12. A semiconductor memory device according to claim 11, wherein the second segment of the first branch-like conductive layer extends horizontally from the second end of the first segment In an outward direction.

13. A semiconductor memory device according to claim 11, wherein the second segment of the first branch-like conductive layer extends horizontally from the second end of the first segment in an inward direction.

1 ? 14. A semiconductor memory device according to claim 11, wherein the first branch-like conductive layer is connected to the trunk-like conductive layer at a peripheral edge of the trunk-like conductive layer, and wherein the second segment of the first C branch-like conductive layer extends horizontally from the second end of the first segment in 5 a direction toward another peripheral edge of the trunk-like conductive layer.

15. A semiconductor memory device according to claim 8, wherein the charge storage capacitor further includes a second branch-like conductive layer having a first end connected to the top surface of the trunk-like conductive layer, and wherein the dielectric layer is further formed on exposed surfaces of the second branch-like conductive layer.

16. A semiconductor memory device according to claim 15, wherein the second branch-like conductive layer has a T-shaped cross section.

17. A sen&onductor memory device according to claim 15, wherein the second branch-like conductive layer has a pillar shape and extends vertically from the top surface of the trunk-like conductive layer.

18. A semiconductor memory device according to claim 11, wherein the charge storage capacitor includes a second branch-like conductive layer substantially parallel to the first branch-like conductive layer, wherein a first end of the second branch-like conductive layer is connected to the top surface of the trunk-like conductive layer.

31)