GB2296592B - Automatic mode selection circuit for a semiconductor memory device - Google Patents

Automatic mode selection circuit for a semiconductor memory device

Info

Publication number
GB2296592B
GB2296592B GB9526695A GB9526695A GB2296592B GB 2296592 B GB2296592 B GB 2296592B GB 9526695 A GB9526695 A GB 9526695A GB 9526695 A GB9526695 A GB 9526695A GB 2296592 B GB2296592 B GB 2296592B
Authority
GB
United Kingdom
Prior art keywords
memory device
semiconductor memory
selection circuit
mode selection
automatic mode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9526695A
Other languages
English (en)
Other versions
GB2296592A (en
GB9526695D0 (en
Inventor
Jung Pill Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9526695D0 publication Critical patent/GB9526695D0/en
Publication of GB2296592A publication Critical patent/GB2296592A/en
Application granted granted Critical
Publication of GB2296592B publication Critical patent/GB2296592B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1045—Read-write mode select circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
    • H03K3/037—Bistable circuits
    • H03K3/0375—Bistable circuits provided with means for increasing reliability; for protection; for ensuring a predetermined initial state when the supply voltage has been applied; for storing the actual state when the supply voltage fails

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Logic Circuits (AREA)
GB9526695A 1994-12-31 1995-12-29 Automatic mode selection circuit for a semiconductor memory device Expired - Fee Related GB2296592B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940040567A KR0120606B1 (ko) 1994-12-31 1994-12-31 반도체 기억소자의 자동모드 선택 회로

Publications (3)

Publication Number Publication Date
GB9526695D0 GB9526695D0 (en) 1996-02-28
GB2296592A GB2296592A (en) 1996-07-03
GB2296592B true GB2296592B (en) 1998-09-23

Family

ID=19406204

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9526695A Expired - Fee Related GB2296592B (en) 1994-12-31 1995-12-29 Automatic mode selection circuit for a semiconductor memory device

Country Status (6)

Country Link
US (1) US5818783A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP2771962B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR0120606B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN (1) CN1121691C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2296592B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW291626B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100203140B1 (ko) * 1996-06-29 1999-06-15 김영환 입력 누설 전류가 없는 자동 모드 선택 장치
KR100278648B1 (ko) * 1997-04-30 2001-01-15 윤종용 반도체장치및방법
JP3022410B2 (ja) * 1997-06-17 2000-03-21 日本電気株式会社 インタフェース回路およびその判定レベル設定方法
TW381385B (en) * 1997-08-20 2000-02-01 Advantest Corp Signal transmission circuit, CMOS semiconductor device and circuit board
JP3087839B2 (ja) * 1997-08-28 2000-09-11 日本電気株式会社 半導体装置、そのテスト方法
JPH1188146A (ja) * 1997-09-04 1999-03-30 Fujitsu Ltd レベルインターフェース回路
KR100321177B1 (ko) * 1999-12-29 2002-03-18 박종섭 메모리모듈의 인쇄회로기판
JP3636968B2 (ja) * 2000-06-05 2005-04-06 エルピーダメモリ株式会社 半導体装置及びそのテスト方法
US6744271B2 (en) * 2002-04-30 2004-06-01 Infineon Technologies Ag Internal generation of reference voltage
KR100596977B1 (ko) * 2004-08-20 2006-07-05 삼성전자주식회사 외부 기준 전압과 내부 기준 전압을 동시에 이용하는 기준전압 발생 회로 및 이를 이용한 기준 전압 발생 방법
US7154794B2 (en) * 2004-10-08 2006-12-26 Lexmark International, Inc. Memory regulator system with test mode
DE102004058612A1 (de) * 2004-12-04 2006-06-08 Infineon Technologies Ag Spannungsversorgungsschaltung, insbesondere für eine DRAM-Speicherschaltung sowie ein Verfahren zum Steuern einer Versorgungsquelle
CN100357856C (zh) * 2005-03-25 2007-12-26 威盛电子股份有限公司 主机板及其电源控制装置
US7343147B2 (en) * 2005-04-04 2008-03-11 Freescale Semiconductor, Inc. Method and apparatus for powering and loading software into a battery-less electronic device
KR100850272B1 (ko) * 2007-01-25 2008-08-04 삼성전자주식회사 반도체 메모리 장치의 전압 발생회로 및 사용 전압공급방법
CN101617371B (zh) 2007-02-16 2014-03-26 莫塞德技术公司 具有多个外部电源的非易失性半导体存储器
US8374049B2 (en) * 2010-04-08 2013-02-12 Agiga Tech Inc. DIMM memory module reference voltage switching circuit
CN103163802B (zh) * 2011-12-15 2015-05-13 快捷半导体(苏州)有限公司 输出控制电路、方法、及其应用设备
CN106199297A (zh) * 2016-09-10 2016-12-07 苏州创必成电子科技有限公司 输入数据有效性检测电路
CN106226685A (zh) * 2016-09-10 2016-12-14 苏州创必成电子科技有限公司 带有开关控制的多输入数据状态并行检测电路
US10033388B1 (en) * 2017-03-21 2018-07-24 Xilinx, Inc. Circuit for and method of enabling the selection of a circuit
TWI700795B (zh) * 2019-03-26 2020-08-01 瑞昱半導體股份有限公司 積體電路晶片及用於其之組態調整方法
CN111766935B (zh) * 2019-04-02 2022-06-21 瑞昱半导体股份有限公司 集成电路芯片及用于集成电路芯片的组态调整方法
KR102749603B1 (ko) * 2020-08-10 2025-01-02 에스케이하이닉스 주식회사 파워게이팅 동작을 수행하는 장치

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1578214A (en) * 1977-11-25 1980-11-05 Ncr Co Memory system including a volatile memory array

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5297097A (en) * 1988-06-17 1994-03-22 Hitachi Ltd. Large scale integrated circuit for low voltage operation
EP0475588B1 (en) * 1990-08-17 1996-06-26 STMicroelectronics, Inc. A semiconductor memory with inhibited test mode entry during power-up
KR930008886B1 (ko) * 1991-08-19 1993-09-16 삼성전자 주식회사 전기적으로 프로그램 할 수 있는 내부전원 발생회로
US5329168A (en) * 1991-12-27 1994-07-12 Nec Corporation Semiconductor integrated circuit device equipped with substrate biasing system selectively powered from internal and external power sources
JP2768172B2 (ja) * 1992-09-30 1998-06-25 日本電気株式会社 半導体メモリ装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1578214A (en) * 1977-11-25 1980-11-05 Ncr Co Memory system including a volatile memory array

Also Published As

Publication number Publication date
GB2296592A (en) 1996-07-03
CN1121691C (zh) 2003-09-17
KR0120606B1 (ko) 1997-10-30
JP2771962B2 (ja) 1998-07-02
US5818783A (en) 1998-10-06
GB9526695D0 (en) 1996-02-28
JPH0963277A (ja) 1997-03-07
CN1140884A (zh) 1997-01-22
KR960027303A (ko) 1996-07-22
TW291626B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1996-11-21

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20131229