GB2103014B - Semiconductor device responsive to ions - Google Patents

Semiconductor device responsive to ions

Info

Publication number
GB2103014B
GB2103014B GB08221136A GB8221136A GB2103014B GB 2103014 B GB2103014 B GB 2103014B GB 08221136 A GB08221136 A GB 08221136A GB 8221136 A GB8221136 A GB 8221136A GB 2103014 B GB2103014 B GB 2103014B
Authority
GB
United Kingdom
Prior art keywords
ions
semiconductor device
device responsive
responsive
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08221136A
Other languages
English (en)
Other versions
GB2103014A (en
Inventor
Felix Rudolf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SUISSE FOND RECH MICROTECH
Original Assignee
SUISSE FOND RECH MICROTECH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SUISSE FOND RECH MICROTECH filed Critical SUISSE FOND RECH MICROTECH
Publication of GB2103014A publication Critical patent/GB2103014A/en
Application granted granted Critical
Publication of GB2103014B publication Critical patent/GB2103014B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Thin Film Transistor (AREA)
GB08221136A 1981-07-24 1982-07-21 Semiconductor device responsive to ions Expired GB2103014B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8114501A FR2510260A1 (fr) 1981-07-24 1981-07-24 Dispositif semiconducteur sensible aux ions

Publications (2)

Publication Number Publication Date
GB2103014A GB2103014A (en) 1983-02-09
GB2103014B true GB2103014B (en) 1985-08-21

Family

ID=9260870

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08221136A Expired GB2103014B (en) 1981-07-24 1982-07-21 Semiconductor device responsive to ions

Country Status (6)

Country Link
US (1) US4636827A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5870155A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH649173A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3226555A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2510260A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2103014B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

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US8349167B2 (en) 2006-12-14 2013-01-08 Life Technologies Corporation Methods and apparatus for detecting molecular interactions using FET arrays
US20100137143A1 (en) 2008-10-22 2010-06-03 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
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US20100301398A1 (en) 2009-05-29 2010-12-02 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
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US20120261274A1 (en) 2009-05-29 2012-10-18 Life Technologies Corporation Methods and apparatus for measuring analytes
US8776573B2 (en) 2009-05-29 2014-07-15 Life Technologies Corporation Methods and apparatus for measuring analytes
CN103392233B (zh) 2010-06-30 2016-08-24 生命科技公司 阵列列积分器
TWI624665B (zh) 2010-06-30 2018-05-21 生命技術公司 離子感測電荷累積電路及方法
EP2588850B1 (en) 2010-06-30 2016-12-28 Life Technologies Corporation Method for dry testing isfet arrays
US11307166B2 (en) 2010-07-01 2022-04-19 Life Technologies Corporation Column ADC
US8653567B2 (en) 2010-07-03 2014-02-18 Life Technologies Corporation Chemically sensitive sensor with lightly doped drains
US9618475B2 (en) 2010-09-15 2017-04-11 Life Technologies Corporation Methods and apparatus for measuring analytes
EP2522993B1 (en) 2011-05-09 2015-11-25 Nxp B.V. FET based sensor with dual-gate stack
US9970984B2 (en) 2011-12-01 2018-05-15 Life Technologies Corporation Method and apparatus for identifying defects in a chemical sensor array
US8786331B2 (en) 2012-05-29 2014-07-22 Life Technologies Corporation System for reducing noise in a chemical sensor array
US9080968B2 (en) 2013-01-04 2015-07-14 Life Technologies Corporation Methods and systems for point of use removal of sacrificial material
US9841398B2 (en) 2013-01-08 2017-12-12 Life Technologies Corporation Methods for manufacturing well structures for low-noise chemical sensors
US8871549B2 (en) * 2013-02-14 2014-10-28 International Business Machines Corporation Biological and chemical sensors
US8963216B2 (en) 2013-03-13 2015-02-24 Life Technologies Corporation Chemical sensor with sidewall spacer sensor surface
JP6671274B2 (ja) 2013-03-15 2020-03-25 ライフ テクノロジーズ コーポレーション 薄伝導性素子を有する化学装置
US9835585B2 (en) 2013-03-15 2017-12-05 Life Technologies Corporation Chemical sensor with protruded sensor surface
US20140264472A1 (en) 2013-03-15 2014-09-18 Life Technologies Corporation Chemical sensor with consistent sensor surface areas
US20140336063A1 (en) 2013-05-09 2014-11-13 Life Technologies Corporation Windowed Sequencing
US10458942B2 (en) 2013-06-10 2019-10-29 Life Technologies Corporation Chemical sensor array having multiple sensors per well
EP4354131A3 (en) 2014-12-18 2024-06-26 Life Technologies Corporation High data rate integrated circuit with transmitter configuration
TW202024628A (zh) 2014-12-18 2020-07-01 美商生命技術公司 用於使用大規模fet陣列量測分析物之方法及設備
US10077472B2 (en) 2014-12-18 2018-09-18 Life Technologies Corporation High data rate integrated circuit with power management
JP2017053794A (ja) * 2015-09-11 2017-03-16 株式会社東芝 電気化学センサ
US11002704B2 (en) * 2016-08-31 2021-05-11 Taiwan Semiconductor Manufacturing Company Limited Biosensor devices and methods of forming the same
JP2019056581A (ja) * 2017-09-20 2019-04-11 ソニーセミコンダクタソリューションズ株式会社 電荷検出センサおよび電位計測システム
US11588095B2 (en) * 2018-09-28 2023-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Piezoelectric biosensor and related method of formation
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US4397714A (en) * 1980-06-16 1983-08-09 University Of Utah System for measuring the concentration of chemical substances

Also Published As

Publication number Publication date
DE3226555C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-08-29
GB2103014A (en) 1983-02-09
US4636827A (en) 1987-01-13
FR2510260B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1983-12-09
CH649173A5 (fr) 1985-04-30
JPS5870155A (ja) 1983-04-26
DE3226555A1 (de) 1983-02-24
JPH0153745B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-11-15
FR2510260A1 (fr) 1983-01-28

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19980721