GB2077039B - Method of making planar thin film transistors - Google Patents

Method of making planar thin film transistors

Info

Publication number
GB2077039B
GB2077039B GB8116849A GB8116849A GB2077039B GB 2077039 B GB2077039 B GB 2077039B GB 8116849 A GB8116849 A GB 8116849A GB 8116849 A GB8116849 A GB 8116849A GB 2077039 B GB2077039 B GB 2077039B
Authority
GB
United Kingdom
Prior art keywords
thin film
film transistors
planar thin
making planar
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8116849A
Other languages
English (en)
Other versions
GB2077039A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of GB2077039A publication Critical patent/GB2077039A/en
Application granted granted Critical
Publication of GB2077039B publication Critical patent/GB2077039B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Semiconductor Memories (AREA)
GB8116849A 1980-06-02 1981-06-02 Method of making planar thin film transistors Expired GB2077039B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/155,335 US4389481A (en) 1980-06-02 1980-06-02 Method of making planar thin film transistors, transistor arrays

Publications (2)

Publication Number Publication Date
GB2077039A GB2077039A (en) 1981-12-09
GB2077039B true GB2077039B (en) 1984-10-31

Family

ID=22555022

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8116849A Expired GB2077039B (en) 1980-06-02 1981-06-02 Method of making planar thin film transistors

Country Status (5)

Country Link
US (1) US4389481A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5721867A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1175158A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3117950A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2077039B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

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JPS57176746A (en) * 1981-04-21 1982-10-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor integrated circuit and manufacture thereof
FR2518810A1 (fr) 1981-12-23 1983-06-24 Morin Francois Procede de fabrication de transistors en couches minces en silicium sur substrat isolant
JPS58169977A (ja) * 1982-03-30 1983-10-06 Canon Inc 薄膜トランジスタの製造方法
US4497683A (en) * 1982-05-03 1985-02-05 At&T Bell Laboratories Process for producing dielectrically isolated silicon devices
US4461071A (en) * 1982-08-23 1984-07-24 Xerox Corporation Photolithographic process for fabricating thin film transistors
US5111260A (en) * 1983-06-17 1992-05-05 Texax Instruments Incorporated Polysilicon FETs
JPS6042855A (ja) * 1983-08-19 1985-03-07 Hitachi Ltd 半導体装置
JPS60103677A (ja) * 1983-11-11 1985-06-07 Seiko Instr & Electronics Ltd 薄膜トランジスタの製造方法
US4654295A (en) * 1983-12-05 1987-03-31 Energy Conversion Devices, Inc. Method of making short channel thin film field effect transistor
JPS60160173A (ja) * 1984-01-30 1985-08-21 Sharp Corp 薄膜トランジスタ
JPS6146975A (ja) * 1984-08-13 1986-03-07 日本電信電話株式会社 アクテイブマトリツクス基板およびその製造方法
JPS6184065A (ja) * 1984-10-01 1986-04-28 Oki Electric Ind Co Ltd 薄膜トランジスタの製造方法
JPS6184066A (ja) * 1984-10-01 1986-04-28 Oki Electric Ind Co Ltd 薄膜トランジスタの製造方法
JPS61181165A (ja) * 1985-02-07 1986-08-13 Yokogawa Electric Corp 半導体装置
JPS6281065A (ja) * 1985-10-04 1987-04-14 Hosiden Electronics Co Ltd 薄膜トランジスタ
JPS6292472A (ja) * 1985-10-18 1987-04-27 Sanyo Electric Co Ltd 薄膜トランジスタの製造方法
JPS62216372A (ja) * 1986-03-18 1987-09-22 Fujitsu Ltd ａ−Ｓｉ薄膜トランジスタ
US4918504A (en) * 1987-07-31 1990-04-17 Nippon Telegraph And Telephone Corporation Active matrix cell
GB8729652D0 (en) * 1987-12-19 1988-02-03 Plessey Co Plc Semi-conductive devices fabricated on soi wafers
JP2751237B2 (ja) * 1988-09-07 1998-05-18 ソニー株式会社 集積回路装置及び集積回路装置の製造方法
FR2638880B1 (fr) * 1988-11-08 1990-12-14 France Etat Procede de fabrication d'un ecran d'affichage a matrice de transistors pourvus d'un masque optique
US5801396A (en) * 1989-01-18 1998-09-01 Stmicroelectronics, Inc. Inverted field-effect device with polycrystalline silicon/germanium channel
US5770892A (en) * 1989-01-18 1998-06-23 Sgs-Thomson Microelectronics, Inc. Field effect device with polycrystalline silicon channel
JP2508851B2 (ja) * 1989-08-23 1996-06-19 日本電気株式会社 液晶表示素子用アクティブマトリクス基板とその製造方法
FR2651371B1 (fr) * 1989-08-29 1991-10-18 France Etat Procede de realisation d'un ecran d'affichage a matrice active et a structure inversee.
JPH0734467B2 (ja) * 1989-11-16 1995-04-12 富士ゼロックス株式会社 イメージセンサ製造方法
JPH04171767A (ja) * 1990-11-02 1992-06-18 Sharp Corp 薄膜トランジスタ及びその製造方法
JPH06163585A (ja) * 1992-11-18 1994-06-10 Nippon Sheet Glass Co Ltd 薄膜トランジスタアレイの製造方法
KR100305877B1 (ko) * 1993-08-19 2001-12-15 김영환 반도체박막트랜지스터(tft)제조방법
US5366911A (en) * 1994-05-11 1994-11-22 United Microelectronics Corporation VLSI process with global planarization
US6140684A (en) * 1997-06-24 2000-10-31 Stmicroelectronic, Inc. SRAM cell structure with dielectric sidewall spacers and drain and channel regions defined along sidewall spacers
US20030148024A1 (en) * 2001-10-05 2003-08-07 Kodas Toivo T. Low viscosity precursor compositons and methods for the depositon of conductive electronic features
US6072223A (en) * 1998-09-02 2000-06-06 Micron Technology, Inc. Circuit and method for a memory cell using reverse base current effect
US7474002B2 (en) * 2001-10-30 2009-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having dielectric film having aperture portion
US6879038B2 (en) * 2003-03-12 2005-04-12 Optical Communication Products, Inc. Method and apparatus for hermetic sealing of assembled die
US7262463B2 (en) * 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
US20070178710A1 (en) * 2003-08-18 2007-08-02 3M Innovative Properties Company Method for sealing thin film transistors
CN1890698B (zh) * 2003-12-02 2011-07-13 株式会社半导体能源研究所 显示器件及其制造方法和电视装置
JP4569207B2 (ja) * 2004-07-28 2010-10-27 ソニー株式会社 電界効果型トランジスタの製造方法
KR100647695B1 (ko) * 2005-05-27 2006-11-23 삼성에스디아이 주식회사 유기 박막 트랜지스터 및 그의 제조방법과 이를 구비한평판표시장치
US9645457B2 (en) * 2006-11-22 2017-05-09 Mitsubishi Electric Corporation Array substrate, display device, and method for manufacturing the array substrate
US8765252B2 (en) * 2007-11-30 2014-07-01 Hewlett-Packard Development Company, L.P. Thin film device with minimized spatial variation of local mean height
JP5567886B2 (ja) * 2010-04-09 2014-08-06 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
US3669661A (en) * 1970-03-06 1972-06-13 Westinghouse Electric Corp Method of producing thin film transistors
US4055885A (en) * 1973-02-28 1977-11-01 Hitachi, Ltd. Charge transfer semiconductor device with electrodes separated by oxide region therebetween and method for fabricating the same
JPS52404B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-05-10 1977-01-07
US4040854A (en) * 1975-02-27 1977-08-09 Calgon Corporation Methods of using cementing compositions having improved flow properties, containing phosphonobutane tricarboxylic acid
US4040073A (en) * 1975-08-29 1977-08-02 Westinghouse Electric Corporation Thin film transistor and display panel using the transistor
US4042854A (en) * 1975-11-21 1977-08-16 Westinghouse Electric Corporation Flat panel display device with integral thin film transistor control system
US4035276A (en) * 1976-04-29 1977-07-12 Ibm Corporation Making coplanar layers of thin films
JPS54141581A (en) * 1978-04-26 1979-11-02 Matsushita Electric Ind Co Ltd Thin film transistor
JPS5568665A (en) * 1978-11-17 1980-05-23 Hitachi Ltd Method of fabricating semiconductor device
US4181755A (en) * 1978-11-21 1980-01-01 Rca Corporation Thin film pattern generation by an inverse self-lifting technique

Also Published As

Publication number Publication date
US4389481A (en) 1983-06-21
JPS5721867A (en) 1982-02-04
DE3117950A1 (de) 1982-01-28
GB2077039A (en) 1981-12-09
JPH0568855B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-09-29
DE3117950C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-04-01
CA1175158A (en) 1984-09-25

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19990602