GB2040568B - Semiconductor device connection conductors - Google Patents

Semiconductor device connection conductors

Info

Publication number
GB2040568B
GB2040568B GB8001003A GB8001003A GB2040568B GB 2040568 B GB2040568 B GB 2040568B GB 8001003 A GB8001003 A GB 8001003A GB 8001003 A GB8001003 A GB 8001003A GB 2040568 B GB2040568 B GB 2040568B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
device connection
connection conductors
conductors
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8001003A
Other languages
English (en)
Other versions
GB2040568A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of GB2040568A publication Critical patent/GB2040568A/en
Application granted granted Critical
Publication of GB2040568B publication Critical patent/GB2040568B/en
Expired legal-status Critical Current

Links

Classifications

    • H10D64/0113—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281—Base electrodes for bipolar transistors
    • H10W20/4451—
GB8001003A 1979-01-15 1980-01-11 Semiconductor device connection conductors Expired GB2040568B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7900280A NL7900280A (nl) 1979-01-15 1979-01-15 Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.

Publications (2)

Publication Number Publication Date
GB2040568A GB2040568A (en) 1980-08-28
GB2040568B true GB2040568B (en) 1983-03-02

Family

ID=19832451

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8001003A Expired GB2040568B (en) 1979-01-15 1980-01-11 Semiconductor device connection conductors

Country Status (6)

Country Link
US (1) US4430793A (enExample)
JP (1) JPS5596653A (enExample)
DE (1) DE3001032A1 (enExample)
FR (1) FR2446540A1 (enExample)
GB (1) GB2040568B (enExample)
NL (1) NL7900280A (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5734359A (en) * 1980-08-08 1982-02-24 Toshiba Corp Semiconductor device and manufacture thereof
JPS5737870A (en) * 1980-08-20 1982-03-02 Toshiba Corp Semiconductor device
EP0064613B1 (en) * 1981-04-30 1986-10-29 Kabushiki Kaisha Toshiba Semiconductor device having a plurality of element units operable in parallel
JPS5866359A (ja) * 1981-09-28 1983-04-20 Fujitsu Ltd 半導体装置の製造方法
NL8105920A (nl) * 1981-12-31 1983-07-18 Philips Nv Halfgeleiderinrichting en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
JPS58202525A (ja) * 1982-05-21 1983-11-25 Toshiba Corp 半導体装置の製造方法
US4712125A (en) * 1982-08-06 1987-12-08 International Business Machines Corporation Structure for contacting a narrow width PN junction region
US4905075A (en) * 1986-05-05 1990-02-27 General Electric Company Hermetic semiconductor enclosure
US5067002A (en) * 1987-01-30 1991-11-19 Motorola, Inc. Integrated circuit structures having polycrystalline electrode contacts
US4837176A (en) * 1987-01-30 1989-06-06 Motorola Inc. Integrated circuit structures having polycrystalline electrode contacts and process
US4772566A (en) * 1987-07-01 1988-09-20 Motorola Inc. Single tub transistor means and method
US5254495A (en) * 1993-05-07 1993-10-19 United Microelectronics Corporation Salicide recessed local oxidation of silicon
DE19832329A1 (de) 1997-07-31 1999-02-04 Siemens Ag Verfahren zur Strukturierung von Halbleitern mit hoher Präzision, guter Homogenität und Reproduzierbarkeit

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611067A (en) * 1970-04-20 1971-10-05 Fairchild Camera Instr Co Complementary npn/pnp structure for monolithic integrated circuits
US4074304A (en) * 1974-10-04 1978-02-14 Nippon Electric Company, Ltd. Semiconductor device having a miniature junction area and process for fabricating same
JPS52119186A (en) * 1976-03-31 1977-10-06 Nec Corp Manufacture of semiconductor
JPS5338992A (en) * 1976-09-22 1978-04-10 Hitachi Ltd Manufacture of semiconductor device
NL7612883A (nl) * 1976-11-19 1978-05-23 Philips Nv Halfgeleiderinrichting, en werkwijze ter ver- vaardiging daarvan.
US4190949A (en) * 1977-11-14 1980-03-04 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device

Also Published As

Publication number Publication date
DE3001032A1 (de) 1980-07-24
NL7900280A (nl) 1980-07-17
FR2446540A1 (fr) 1980-08-08
FR2446540B1 (enExample) 1985-05-17
US4430793A (en) 1984-02-14
JPS5596653A (en) 1980-07-23
GB2040568A (en) 1980-08-28

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee