FR2446540B1 - - Google Patents
Info
- Publication number
- FR2446540B1 FR2446540B1 FR8000589A FR8000589A FR2446540B1 FR 2446540 B1 FR2446540 B1 FR 2446540B1 FR 8000589 A FR8000589 A FR 8000589A FR 8000589 A FR8000589 A FR 8000589A FR 2446540 B1 FR2446540 B1 FR 2446540B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10D64/0113—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/281—Base electrodes for bipolar transistors
-
- H10W20/4451—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7900280A NL7900280A (nl) | 1979-01-15 | 1979-01-15 | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2446540A1 FR2446540A1 (fr) | 1980-08-08 |
| FR2446540B1 true FR2446540B1 (enExample) | 1985-05-17 |
Family
ID=19832451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8000589A Granted FR2446540A1 (fr) | 1979-01-15 | 1980-01-11 | Dispositif semi-conducteur tres petit, notamment transistor pour circuits integres et procede pour le fabriquer |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4430793A (enExample) |
| JP (1) | JPS5596653A (enExample) |
| DE (1) | DE3001032A1 (enExample) |
| FR (1) | FR2446540A1 (enExample) |
| GB (1) | GB2040568B (enExample) |
| NL (1) | NL7900280A (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5734359A (en) * | 1980-08-08 | 1982-02-24 | Toshiba Corp | Semiconductor device and manufacture thereof |
| JPS5737870A (en) * | 1980-08-20 | 1982-03-02 | Toshiba Corp | Semiconductor device |
| DE3274035D1 (en) * | 1981-04-30 | 1986-12-04 | Toshiba Kk | Semiconductor device having a plurality of element units operable in parallel |
| JPS5866359A (ja) * | 1981-09-28 | 1983-04-20 | Fujitsu Ltd | 半導体装置の製造方法 |
| NL8105920A (nl) * | 1981-12-31 | 1983-07-18 | Philips Nv | Halfgeleiderinrichting en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting. |
| JPS58202525A (ja) * | 1982-05-21 | 1983-11-25 | Toshiba Corp | 半導体装置の製造方法 |
| US4712125A (en) * | 1982-08-06 | 1987-12-08 | International Business Machines Corporation | Structure for contacting a narrow width PN junction region |
| US4905075A (en) * | 1986-05-05 | 1990-02-27 | General Electric Company | Hermetic semiconductor enclosure |
| US4837176A (en) * | 1987-01-30 | 1989-06-06 | Motorola Inc. | Integrated circuit structures having polycrystalline electrode contacts and process |
| US5067002A (en) * | 1987-01-30 | 1991-11-19 | Motorola, Inc. | Integrated circuit structures having polycrystalline electrode contacts |
| US4772566A (en) * | 1987-07-01 | 1988-09-20 | Motorola Inc. | Single tub transistor means and method |
| US5254495A (en) * | 1993-05-07 | 1993-10-19 | United Microelectronics Corporation | Salicide recessed local oxidation of silicon |
| DE19832329A1 (de) | 1997-07-31 | 1999-02-04 | Siemens Ag | Verfahren zur Strukturierung von Halbleitern mit hoher Präzision, guter Homogenität und Reproduzierbarkeit |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3611067A (en) * | 1970-04-20 | 1971-10-05 | Fairchild Camera Instr Co | Complementary npn/pnp structure for monolithic integrated circuits |
| US4074304A (en) * | 1974-10-04 | 1978-02-14 | Nippon Electric Company, Ltd. | Semiconductor device having a miniature junction area and process for fabricating same |
| JPS52119186A (en) * | 1976-03-31 | 1977-10-06 | Nec Corp | Manufacture of semiconductor |
| JPS5338992A (en) * | 1976-09-22 | 1978-04-10 | Hitachi Ltd | Manufacture of semiconductor device |
| NL7612883A (nl) * | 1976-11-19 | 1978-05-23 | Philips Nv | Halfgeleiderinrichting, en werkwijze ter ver- vaardiging daarvan. |
| GB2010580B (en) * | 1977-11-14 | 1982-06-30 | Tokyo Shibaura Electric Co | Method for manufacturing a semiconductor device |
-
1979
- 1979-01-15 NL NL7900280A patent/NL7900280A/nl not_active Application Discontinuation
-
1980
- 1980-01-11 FR FR8000589A patent/FR2446540A1/fr active Granted
- 1980-01-11 US US06/111,401 patent/US4430793A/en not_active Expired - Lifetime
- 1980-01-11 GB GB8001003A patent/GB2040568B/en not_active Expired
- 1980-01-12 DE DE19803001032 patent/DE3001032A1/de not_active Withdrawn
- 1980-01-14 JP JP301180A patent/JPS5596653A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB2040568A (en) | 1980-08-28 |
| JPS5596653A (en) | 1980-07-23 |
| GB2040568B (en) | 1983-03-02 |
| DE3001032A1 (de) | 1980-07-24 |
| FR2446540A1 (fr) | 1980-08-08 |
| NL7900280A (nl) | 1980-07-17 |
| US4430793A (en) | 1984-02-14 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |