GB201110117D0 - method and device for manufacturing a barrie layer on a flexible substrate - Google Patents

method and device for manufacturing a barrie layer on a flexible substrate

Info

Publication number
GB201110117D0
GB201110117D0 GBGB1110117.7A GB201110117A GB201110117D0 GB 201110117 D0 GB201110117 D0 GB 201110117D0 GB 201110117 A GB201110117 A GB 201110117A GB 201110117 D0 GB201110117 D0 GB 201110117D0
Authority
GB
United Kingdom
Prior art keywords
substrate
manufacturing
flexible substrate
treatment space
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB1110117.7A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Manufacturing Europe BV
Original Assignee
Fujifilm Manufacturing Europe BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Manufacturing Europe BV filed Critical Fujifilm Manufacturing Europe BV
Priority to GBGB1110117.7A priority Critical patent/GB201110117D0/en
Publication of GB201110117D0 publication Critical patent/GB201110117D0/en
Priority to EP12719037.9A priority patent/EP2721193B1/en
Priority to PCT/GB2012/050897 priority patent/WO2012172304A1/en
Priority to US14/126,572 priority patent/US9117663B2/en
Priority to JP2014515276A priority patent/JP2014519558A/ja
Priority to US14/799,603 priority patent/US9390908B2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6316—Formation by nitridation, e.g. nitridation of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H10P14/6526—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen introduced into an oxide material, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6548—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by forming intermediate materials, e.g. capping layers or diffusion barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249967—Inorganic matrix in void-containing component
    • Y10T428/249969—Of silicon-containing material [e.g., glass, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Electroluminescent Light Sources (AREA)
GBGB1110117.7A 2011-06-16 2011-06-16 method and device for manufacturing a barrie layer on a flexible substrate Ceased GB201110117D0 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GBGB1110117.7A GB201110117D0 (en) 2011-06-16 2011-06-16 method and device for manufacturing a barrie layer on a flexible substrate
EP12719037.9A EP2721193B1 (en) 2011-06-16 2012-04-24 Method for manufacturing a barrier layer on a flexible substrate
PCT/GB2012/050897 WO2012172304A1 (en) 2011-06-16 2012-04-24 Method and device for manufacturing a barrier layer on a flexible substrate
US14/126,572 US9117663B2 (en) 2011-06-16 2012-04-24 Method and device for manufacturing a barrier layer on a flexible substrate
JP2014515276A JP2014519558A (ja) 2011-06-16 2012-04-24 フレキシブル基材上にバリヤー層を製造するための方法および機器
US14/799,603 US9390908B2 (en) 2011-06-16 2015-07-15 Method and device for manufacturing a barrier layer on a flexible substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB1110117.7A GB201110117D0 (en) 2011-06-16 2011-06-16 method and device for manufacturing a barrie layer on a flexible substrate

Publications (1)

Publication Number Publication Date
GB201110117D0 true GB201110117D0 (en) 2011-07-27

Family

ID=44357840

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB1110117.7A Ceased GB201110117D0 (en) 2011-06-16 2011-06-16 method and device for manufacturing a barrie layer on a flexible substrate

Country Status (5)

Country Link
US (2) US9117663B2 (https=)
EP (1) EP2721193B1 (https=)
JP (1) JP2014519558A (https=)
GB (1) GB201110117D0 (https=)
WO (1) WO2012172304A1 (https=)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201210836D0 (en) * 2012-06-19 2012-08-01 Fujifilm Mfg Europe Bv Method and device for manufacturing a barrier layer on a flexible substrate
JP6117124B2 (ja) * 2013-03-19 2017-04-19 富士フイルム株式会社 酸化物半導体膜及びその製造方法
GB201403551D0 (en) 2014-02-28 2014-04-16 Fujifilm Mfg Europe Bv Membrane stacks
CN106783720B (zh) * 2017-03-03 2020-06-23 京东方科技集团股份有限公司 一种显示基板及其制作方法
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10847360B2 (en) * 2017-05-25 2020-11-24 Applied Materials, Inc. High pressure treatment of silicon nitride film
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
JP7190450B2 (ja) 2017-06-02 2022-12-15 アプライド マテリアルズ インコーポレイテッド 炭化ホウ素ハードマスクのドライストリッピング
US10234630B2 (en) 2017-07-12 2019-03-19 Applied Materials, Inc. Method for creating a high refractive index wave guide
US10269571B2 (en) 2017-07-12 2019-04-23 Applied Materials, Inc. Methods for fabricating nanowire for semiconductor applications
US10179941B1 (en) 2017-07-14 2019-01-15 Applied Materials, Inc. Gas delivery system for high pressure processing chamber
JP6947914B2 (ja) 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧高温下のアニールチャンバ
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
SG11202001450UA (en) 2017-09-12 2020-03-30 Applied Materials Inc Apparatus and methods for manufacturing semiconductor structures using protective barrier layer
US10643867B2 (en) 2017-11-03 2020-05-05 Applied Materials, Inc. Annealing system and method
EP4321649B1 (en) 2017-11-11 2025-08-20 Micromaterials LLC Gas delivery system for high pressure processing chamber
JP7330181B2 (ja) 2017-11-16 2023-08-21 アプライド マテリアルズ インコーポレイテッド 高圧蒸気アニール処理装置
JP2021503714A (ja) 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧処理システムのためのコンデンサシステム
KR102649241B1 (ko) 2018-01-24 2024-03-18 어플라이드 머티어리얼스, 인코포레이티드 고압 어닐링을 사용한 심 힐링
SG11202008256WA (en) 2018-03-09 2020-09-29 Applied Materials Inc High pressure annealing process for metal containing materials
US10714331B2 (en) 2018-04-04 2020-07-14 Applied Materials, Inc. Method to fabricate thermally stable low K-FinFET spacer
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10566188B2 (en) 2018-05-17 2020-02-18 Applied Materials, Inc. Method to improve film stability
US10704141B2 (en) 2018-06-01 2020-07-07 Applied Materials, Inc. In-situ CVD and ALD coating of chamber to control metal contamination
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10675581B2 (en) 2018-08-06 2020-06-09 Applied Materials, Inc. Gas abatement apparatus
KR102528076B1 (ko) 2018-10-30 2023-05-03 어플라이드 머티어리얼스, 인코포레이티드 반도체 응용들을 위한 구조를 식각하기 위한 방법들
WO2020101935A1 (en) 2018-11-16 2020-05-22 Applied Materials, Inc. Film deposition using enhanced diffusion process
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US11996540B2 (en) 2019-12-20 2024-05-28 Intecells, Inc. Method and apparatus for making lithium ion battery electrodes
US11621411B2 (en) * 2019-12-23 2023-04-04 Intecells, Inc. Method of insulating lithium ion electrochemical cell components with metal oxide coatings
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
SE2330191A1 (en) 2023-05-01 2024-11-02 Volvo Truck Corp Radar-based wheel end modules for determining wheel force generating capability

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04249520A (ja) 1991-01-08 1992-09-04 Matsushita Electric Works Ltd 液状エポキシ樹脂成形材料
US6913796B2 (en) * 2000-03-20 2005-07-05 Axcelis Technologies, Inc. Plasma curing process for porous low-k materials
US6794311B2 (en) * 2000-07-14 2004-09-21 Applied Materials Inc. Method and apparatus for treating low k dielectric layers to reduce diffusion
JP2003068850A (ja) * 2001-08-29 2003-03-07 Tokyo Electron Ltd 半導体装置およびその製造方法
EP1452619B1 (en) 2001-10-02 2011-09-14 National Institute of Advanced Industrial Science and Technology Process for producing a thin metal oxide film
JP2003264058A (ja) * 2002-03-07 2003-09-19 Konica Corp 基板及び該基板を用いた有機エレクトロルミネッセンス表示装置
US6774569B2 (en) 2002-07-11 2004-08-10 Fuji Photo Film B.V. Apparatus for producing and sustaining a glow discharge plasma under atmospheric conditions
US7288204B2 (en) 2002-07-19 2007-10-30 Fuji Photo Film B.V. Method and arrangement for treating a substrate with an atmospheric pressure glow plasma (APG)
US20050202168A1 (en) * 2002-08-16 2005-09-15 General Electric Company Thermally-stabilized thermal barrier coating and process therefor
EP1403902A1 (en) 2002-09-30 2004-03-31 Fuji Photo Film B.V. Method and arrangement for generating an atmospheric pressure glow discharge plasma (APG)
JP4249520B2 (ja) 2003-03-19 2009-04-02 大日本印刷株式会社 ガスバリア性積層材の製造方法
KR100808790B1 (ko) 2003-05-23 2008-03-03 주식회사 엘지화학 질소 플라즈마 처리된 ｉｔｏ 필름 및 이를 양극으로사용한 유기 발광 소자
JP4057972B2 (ja) * 2003-07-25 2008-03-05 富士通株式会社 半導体装置の製造方法
JP2005142325A (ja) * 2003-11-06 2005-06-02 Semiconductor Leading Edge Technologies Inc 半導体装置及びその製造方法
EP1548795A1 (en) 2003-12-22 2005-06-29 Fuji Photo Film B.V. Method and apparatus for stabilizing a glow discharge plasma under atmospheric conditions
JP4668208B2 (ja) 2003-12-22 2011-04-13 フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． 大気圧グロープラズマを用いて基板表面から汚物を除去する方法及び装置
DE602004003697T2 (de) 2004-08-13 2007-10-04 Fuji Film Manufacturing Europe B.V. Verfahren und Vorrichtung zur Steuerung eines Glühentladungsplasmas unter atmosphärischem Druck
TWI251277B (en) * 2004-12-31 2006-03-11 Ind Tech Res Inst Method for forming a silicon oxide layer
US7229918B2 (en) 2005-02-14 2007-06-12 Infineon Technologies Ag Nitrogen rich barrier layers and methods of fabrication thereof
JP4698310B2 (ja) 2005-07-11 2011-06-08 富士フイルム株式会社 ガスバリア性フィルム、基材フィルムおよび有機エレクトロルミネッセンス素子
EP1917842B1 (en) 2005-08-26 2015-03-11 FUJIFILM Manufacturing Europe B.V. Method and arrangement for generating and controlling a discharge plasma
US20080242118A1 (en) * 2007-03-29 2008-10-02 International Business Machines Corporation Methods for forming dense dielectric layer over porous dielectrics
EP2243859A4 (en) * 2008-02-19 2013-09-25 Konica Minolta Holdings Inc METHOD FOR FORMING A THIN FILM AND THIN FILM STACK
EP2528082A3 (en) 2008-02-21 2014-11-05 FUJIFILM Manufacturing Europe B.V. Plasma treatment apparatus with an atmospheric pressure glow discharge electrode configuration
US7629264B2 (en) * 2008-04-09 2009-12-08 International Business Machines Corporation Structure and method for hybrid tungsten copper metal contact
KR20090116477A (ko) * 2008-05-07 2009-11-11 삼성전자주식회사 초저유전막을 포함하는 반도체 소자의 제조 방법
JP5173863B2 (ja) * 2009-01-20 2013-04-03 パナソニック株式会社 半導体装置およびその製造方法
EP2226832A1 (en) 2009-03-06 2010-09-08 FUJIFILM Manufacturing Europe B.V. Substrate plasma treatment using side tabs
US8334202B2 (en) * 2009-11-03 2012-12-18 Infineon Technologies Ag Device fabricated using an electroplating process

Also Published As

Publication number Publication date
US9117663B2 (en) 2015-08-25
US20140138802A1 (en) 2014-05-22
JP2014519558A (ja) 2014-08-14
US20150315701A1 (en) 2015-11-05
WO2012172304A1 (en) 2012-12-20
EP2721193A1 (en) 2014-04-23
US9390908B2 (en) 2016-07-12
EP2721193B1 (en) 2015-03-04

Similar Documents

Publication Publication Date Title
GB201110117D0 (en) method and device for manufacturing a barrie layer on a flexible substrate
WO2012087002A3 (ko) 화학 기상 증착 장치 및 이를 사용한 발광소자 제조방법
WO2011126612A3 (en) Nitrogen doped amorphous carbon hardmask
WO2009003613A8 (de) Vorrichtung zur behandlung von oberflächen mit einem mittels einer elektrode über ein feststoff-dielektrikum durch eine dielektrisch behinderte gasentladung erzeugten plasma
JP2014519558A5 (https=)
GB2468458A (en) Method of etching a high aspect ratio contact
MY157325A (en) Atmospheric plasma coating for ophthalmic devices
WO2013036667A3 (en) Flowable silicon-carbon-nitrogen layers for semiconductor processing
MX379465B (es) Proceso y aparato para endurecer termoquímicamente piezas a trabajar.
WO2011006018A3 (en) Apparatus and method for plasma processing
WO2014110446A3 (en) Method and system for graphene formation
MX2013012755A (es) Metodo para incrementar el poder adhesivo de una capa adhesiva sensible a la presion que tiene una superficie superior y una superficie inferior.
WO2011028349A3 (en) Remote hydrogen plasma source of silicon containing film deposition
JP2012033911A5 (https=)
TW200605221A (en) Adhesion improvement for low k dielectrics
WO2010120411A3 (en) Pulsed plasma deposition for forming microcrystalline silicon layer for solar applications
SG11202010268QA (en) Apparatus for suppressing parasitic plasma in plasma enhanced chemical vapor deposition chamber
WO2012118955A3 (en) Apparatus and process for atomic layer deposition
MY183557A (en) Plasma cvd device and plasma cvd method
JP2015513609A5 (https=)
JP2012004549A5 (ja) 半導体装置
WO2011029096A3 (en) Plasma enhanced chemical vapor deposition apparatus
WO2013156352A3 (de) Plasmaroller
TW201614727A (en) Method of depositing insulation layer on deep trench having high aspect ratio
WO2012054577A3 (en) Methods for depositing bevel protective film

Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)