GB1600890A - Semiconductor non-volatile memory - Google Patents

Semiconductor non-volatile memory Download PDF

Info

Publication number
GB1600890A
GB1600890A GB25231/78A GB2523178A GB1600890A GB 1600890 A GB1600890 A GB 1600890A GB 25231/78 A GB25231/78 A GB 25231/78A GB 2523178 A GB2523178 A GB 2523178A GB 1600890 A GB1600890 A GB 1600890A
Authority
GB
United Kingdom
Prior art keywords
semiconductor
region
memory cell
volatile memory
type conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB25231/78A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of GB1600890A publication Critical patent/GB1600890A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/686—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Non-Volatile Memory (AREA)
GB25231/78A 1977-06-08 1978-05-31 Semiconductor non-volatile memory Expired GB1600890A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6821777A JPS542679A (en) 1977-06-08 1977-06-08 Nonvoltile semiconductor memory device

Publications (1)

Publication Number Publication Date
GB1600890A true GB1600890A (en) 1981-10-21

Family

ID=13367401

Family Applications (1)

Application Number Title Priority Date Filing Date
GB25231/78A Expired GB1600890A (en) 1977-06-08 1978-05-31 Semiconductor non-volatile memory

Country Status (5)

Country Link
US (1) US4233616A (enExample)
JP (1) JPS542679A (enExample)
GB (1) GB1600890A (enExample)
NL (1) NL179774C (enExample)
SE (1) SE7806147L (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3065360D1 (en) * 1979-06-18 1983-11-24 Fujitsu Ltd Semiconductor non-volatile memory device
JPS5754370A (en) * 1980-09-19 1982-03-31 Nippon Telegr & Teleph Corp <Ntt> Insulating gate type transistor
US4395725A (en) * 1980-10-14 1983-07-26 Parekh Rajesh H Segmented channel field effect transistors
JPS63264602A (ja) * 1986-12-01 1988-11-01 Asahi Chem Ind Co Ltd 重合体の製造法
JPS63142007A (ja) * 1986-12-05 1988-06-14 Asahi Chem Ind Co Ltd 重合体の製造方法
JPS63179953A (ja) * 1987-01-21 1988-07-23 Asahi Chem Ind Co Ltd 重合体組成物の製造方法
JPH01135801A (ja) * 1987-11-24 1989-05-29 Asahi Chem Ind Co Ltd 変性重合体の製造法
JPH01182308A (ja) * 1988-01-14 1989-07-20 Asahi Chem Ind Co Ltd 重合体の取得法
JPH01185304A (ja) * 1988-01-19 1989-07-24 Asahi Chem Ind Co Ltd 変性重合体の取得方法
JPH0455570U (enExample) * 1990-09-19 1992-05-13
JPH05297016A (ja) * 1992-04-22 1993-11-12 Japan Radio Co Ltd 風車型風向風速測定装置
WO1996016432A2 (en) * 1994-11-16 1996-05-30 Matsushita Electric Industrial Co., Ltd. Channel or source/drain structure of mosfet and method for fabricating the same
EP0814502A1 (en) * 1996-06-21 1997-12-29 Matsushita Electric Industrial Co., Ltd. Complementary semiconductor device and method for producing the same
KR100241524B1 (ko) * 1996-12-28 2000-02-01 김영환 플래쉬 메모리 셀
TWI257703B (en) * 2005-04-22 2006-07-01 Au Optronics Corp EEPROM and method of manufacturing the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4014036A (en) * 1971-07-06 1977-03-22 Ibm Corporation Single-electrode charge-coupled random access memory cell
JPS5140787B2 (enExample) * 1971-09-16 1976-11-05
US4057820A (en) * 1976-06-29 1977-11-08 Westinghouse Electric Corporation Dual gate MNOS transistor
US4054895A (en) * 1976-12-27 1977-10-18 Rca Corporation Silicon-on-sapphire mesa transistor having doped edges
US4142926A (en) * 1977-02-24 1979-03-06 Intel Corporation Self-aligning double polycrystalline silicon etching process
US4135929A (en) * 1977-09-09 1979-01-23 Eastman Kodak Company Photographic sulfonamido compounds and elements and processes using them

Also Published As

Publication number Publication date
JPS5729859B2 (enExample) 1982-06-25
SE7806147L (sv) 1978-12-09
NL179774C (nl) 1986-11-03
JPS542679A (en) 1979-01-10
US4233616A (en) 1980-11-11
NL179774B (nl) 1986-06-02
NL7806098A (nl) 1978-12-12

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940531