SE7806147L - Programmerbart permanentminne av halvledartyp - Google Patents
Programmerbart permanentminne av halvledartypInfo
- Publication number
- SE7806147L SE7806147L SE7806147A SE7806147A SE7806147L SE 7806147 L SE7806147 L SE 7806147L SE 7806147 A SE7806147 A SE 7806147A SE 7806147 A SE7806147 A SE 7806147A SE 7806147 L SE7806147 L SE 7806147L
- Authority
- SE
- Sweden
- Prior art keywords
- temperature memory
- permanent temperature
- programmable permanent
- programmable
- memory
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
- H10D30/686—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
- H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
- H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6821777A JPS542679A (en) | 1977-06-08 | 1977-06-08 | Nonvoltile semiconductor memory device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE7806147L true SE7806147L (sv) | 1978-12-09 |
Family
ID=13367401
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7806147A SE7806147L (sv) | 1977-06-08 | 1978-05-29 | Programmerbart permanentminne av halvledartyp |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4233616A (enExample) |
| JP (1) | JPS542679A (enExample) |
| GB (1) | GB1600890A (enExample) |
| NL (1) | NL179774C (enExample) |
| SE (1) | SE7806147L (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0021777B1 (en) * | 1979-06-18 | 1983-10-19 | Fujitsu Limited | Semiconductor non-volatile memory device |
| JPS5754370A (en) * | 1980-09-19 | 1982-03-31 | Nippon Telegr & Teleph Corp <Ntt> | Insulating gate type transistor |
| US4395725A (en) * | 1980-10-14 | 1983-07-26 | Parekh Rajesh H | Segmented channel field effect transistors |
| JPS63264602A (ja) * | 1986-12-01 | 1988-11-01 | Asahi Chem Ind Co Ltd | 重合体の製造法 |
| JPS63142007A (ja) * | 1986-12-05 | 1988-06-14 | Asahi Chem Ind Co Ltd | 重合体の製造方法 |
| JPS63179953A (ja) * | 1987-01-21 | 1988-07-23 | Asahi Chem Ind Co Ltd | 重合体組成物の製造方法 |
| JPH01135801A (ja) * | 1987-11-24 | 1989-05-29 | Asahi Chem Ind Co Ltd | 変性重合体の製造法 |
| JPH01182308A (ja) * | 1988-01-14 | 1989-07-20 | Asahi Chem Ind Co Ltd | 重合体の取得法 |
| JPH01185304A (ja) * | 1988-01-19 | 1989-07-24 | Asahi Chem Ind Co Ltd | 変性重合体の取得方法 |
| JPH0455570U (enExample) * | 1990-09-19 | 1992-05-13 | ||
| JPH05297016A (ja) * | 1992-04-22 | 1993-11-12 | Japan Radio Co Ltd | 風車型風向風速測定装置 |
| WO1996016432A2 (en) | 1994-11-16 | 1996-05-30 | Matsushita Electric Industrial Co., Ltd. | Channel or source/drain structure of mosfet and method for fabricating the same |
| EP0814502A1 (en) * | 1996-06-21 | 1997-12-29 | Matsushita Electric Industrial Co., Ltd. | Complementary semiconductor device and method for producing the same |
| KR100241524B1 (ko) * | 1996-12-28 | 2000-02-01 | 김영환 | 플래쉬 메모리 셀 |
| TWI257703B (en) * | 2005-04-22 | 2006-07-01 | Au Optronics Corp | EEPROM and method of manufacturing the same |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4014036A (en) * | 1971-07-06 | 1977-03-22 | Ibm Corporation | Single-electrode charge-coupled random access memory cell |
| JPS5140787B2 (enExample) * | 1971-09-16 | 1976-11-05 | ||
| US4057820A (en) * | 1976-06-29 | 1977-11-08 | Westinghouse Electric Corporation | Dual gate MNOS transistor |
| US4054895A (en) * | 1976-12-27 | 1977-10-18 | Rca Corporation | Silicon-on-sapphire mesa transistor having doped edges |
| US4142926A (en) * | 1977-02-24 | 1979-03-06 | Intel Corporation | Self-aligning double polycrystalline silicon etching process |
| US4135929A (en) * | 1977-09-09 | 1979-01-23 | Eastman Kodak Company | Photographic sulfonamido compounds and elements and processes using them |
-
1977
- 1977-06-08 JP JP6821777A patent/JPS542679A/ja active Granted
-
1978
- 1978-05-29 SE SE7806147A patent/SE7806147L/xx unknown
- 1978-05-30 US US05/910,950 patent/US4233616A/en not_active Expired - Lifetime
- 1978-05-31 GB GB25231/78A patent/GB1600890A/en not_active Expired
- 1978-06-05 NL NLAANVRAGE7806098,A patent/NL179774C/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPS542679A (en) | 1979-01-10 |
| NL179774B (nl) | 1986-06-02 |
| GB1600890A (en) | 1981-10-21 |
| NL179774C (nl) | 1986-11-03 |
| US4233616A (en) | 1980-11-11 |
| NL7806098A (nl) | 1978-12-12 |
| JPS5729859B2 (enExample) | 1982-06-25 |
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