GB1591670A - Crystal growing operations - Google Patents
Crystal growing operations Download PDFInfo
- Publication number
- GB1591670A GB1591670A GB52192/77A GB5219277A GB1591670A GB 1591670 A GB1591670 A GB 1591670A GB 52192/77 A GB52192/77 A GB 52192/77A GB 5219277 A GB5219277 A GB 5219277A GB 1591670 A GB1591670 A GB 1591670A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crucible
- heating
- melt
- housing
- supplemental heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title description 39
- 238000010438 heat treatment Methods 0.000 claims description 44
- 239000000155 melt Substances 0.000 claims description 33
- 230000015572 biosynthetic process Effects 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 14
- 230000000153 supplemental effect Effects 0.000 claims description 13
- 239000002178 crystalline material Substances 0.000 claims description 9
- 238000005755 formation reaction Methods 0.000 description 29
- 230000012010 growth Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 8
- 239000012768 molten material Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000010453 quartz Substances 0.000 description 4
- 230000003094 perturbing effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/750,985 US4116642A (en) | 1976-12-15 | 1976-12-15 | Method and apparatus for avoiding undesirable deposits in crystal growing operations |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1591670A true GB1591670A (en) | 1981-06-24 |
Family
ID=25019967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB52192/77A Expired GB1591670A (en) | 1976-12-15 | 1977-12-15 | Crystal growing operations |
Country Status (6)
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2842605C2 (de) * | 1978-09-29 | 1983-12-08 | Georg Dr. 8521 Langensendelbach Müller | Verfahren zum Herstellen von Kristallen hoher Kristallgüte |
| US4289571A (en) * | 1979-06-25 | 1981-09-15 | Energy Materials Corporation | Method and apparatus for producing crystalline ribbons |
| US4478676A (en) * | 1982-09-07 | 1984-10-23 | Litton Systems, Inc. | Method for decreasing radial temperature gradients of crystal growth melts utilizing radiant energy absorptive materials and crystal growth chambers comprising such materials |
| US4575401A (en) * | 1984-06-07 | 1986-03-11 | Wedtech Corp | Method of and apparatus for the drawing of bars of monocrystalline silicon |
| USH520H (en) | 1985-12-06 | 1988-09-06 | Technique for increasing oxygen incorporation during silicon czochralski crystal growth | |
| US4911896A (en) * | 1986-07-24 | 1990-03-27 | General Electric Company | Fused quartz member for use in semiconductor manufacture |
| US20050274480A1 (en) * | 2004-05-24 | 2005-12-15 | Barsoum Michel W | Reduction of spontaneous metal whisker formation |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA729096A (en) * | 1966-03-01 | G. Herkart Paul | Method of growing crystals | |
| NL103477C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1956-11-28 | |||
| NL104388C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1956-11-28 | |||
| US3261671A (en) * | 1963-11-29 | 1966-07-19 | Philips Corp | Device for treating semi-conductor materials by melting |
| US3342559A (en) * | 1964-04-27 | 1967-09-19 | Westinghouse Electric Corp | Apparatus for producing dendrites |
| GB1095587A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1965-09-24 | |||
| FR1522416A (fr) * | 1967-03-14 | 1968-04-26 | Comp Generale Electricite | Perfectionnements au procédé d'obtention de cristaux par tirage |
| DE1769860A1 (de) * | 1968-07-26 | 1971-11-11 | Siemens Ag | Vorrichtung zum Ziehen von versetzungsfreien Halbleitereinkristallstaeben |
| GB1366532A (en) * | 1971-04-21 | 1974-09-11 | Nat Res Dev | Apparatus for the preparation and growth of crystalline material |
| JPS5836498B2 (ja) * | 1976-06-09 | 1983-08-09 | 富士通株式会社 | 半導体装置 |
-
1976
- 1976-12-15 US US05/750,985 patent/US4116642A/en not_active Expired - Lifetime
-
1977
- 1977-11-08 CA CA290,434A patent/CA1078299A/en not_active Expired
- 1977-12-09 DE DE2755006A patent/DE2755006C3/de not_active Expired
- 1977-12-14 FR FR7737672A patent/FR2374081A1/fr active Granted
- 1977-12-15 JP JP14999077A patent/JPS5376176A/ja active Granted
- 1977-12-15 GB GB52192/77A patent/GB1591670A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2755006B2 (de) | 1981-07-23 |
| US4116642A (en) | 1978-09-26 |
| JPS5376176A (en) | 1978-07-06 |
| CA1078299A (en) | 1980-05-27 |
| JPS5633359B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1981-08-03 |
| DE2755006C3 (de) | 1982-04-29 |
| FR2374081B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1982-01-08 |
| FR2374081A1 (fr) | 1978-07-13 |
| DE2755006A1 (de) | 1978-06-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |