JPS5376176A - Method and apparatus for growing crystal - Google Patents

Method and apparatus for growing crystal

Info

Publication number
JPS5376176A
JPS5376176A JP14999077A JP14999077A JPS5376176A JP S5376176 A JPS5376176 A JP S5376176A JP 14999077 A JP14999077 A JP 14999077A JP 14999077 A JP14999077 A JP 14999077A JP S5376176 A JPS5376176 A JP S5376176A
Authority
JP
Japan
Prior art keywords
growing crystal
growing
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14999077A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5633359B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Yao Chiyuu Tsuu
Jiyaruria Yogeshiyu
Jiyosefu Rabuiguna Robaato
Edowaado Ruuzaa Reimondo
Uiriamuzu Jiyooji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of JPS5376176A publication Critical patent/JPS5376176A/ja
Publication of JPS5633359B2 publication Critical patent/JPS5633359B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP14999077A 1976-12-15 1977-12-15 Method and apparatus for growing crystal Granted JPS5376176A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/750,985 US4116642A (en) 1976-12-15 1976-12-15 Method and apparatus for avoiding undesirable deposits in crystal growing operations

Publications (2)

Publication Number Publication Date
JPS5376176A true JPS5376176A (en) 1978-07-06
JPS5633359B2 JPS5633359B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1981-08-03

Family

ID=25019967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14999077A Granted JPS5376176A (en) 1976-12-15 1977-12-15 Method and apparatus for growing crystal

Country Status (6)

Country Link
US (1) US4116642A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5376176A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1078299A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2755006C3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2374081A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1591670A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2842605C2 (de) * 1978-09-29 1983-12-08 Georg Dr. 8521 Langensendelbach Müller Verfahren zum Herstellen von Kristallen hoher Kristallgüte
US4289571A (en) * 1979-06-25 1981-09-15 Energy Materials Corporation Method and apparatus for producing crystalline ribbons
US4478676A (en) * 1982-09-07 1984-10-23 Litton Systems, Inc. Method for decreasing radial temperature gradients of crystal growth melts utilizing radiant energy absorptive materials and crystal growth chambers comprising such materials
US4575401A (en) * 1984-06-07 1986-03-11 Wedtech Corp Method of and apparatus for the drawing of bars of monocrystalline silicon
USH520H (en) 1985-12-06 1988-09-06 Technique for increasing oxygen incorporation during silicon czochralski crystal growth
US4911896A (en) * 1986-07-24 1990-03-27 General Electric Company Fused quartz member for use in semiconductor manufacture
US20050274480A1 (en) * 2004-05-24 2005-12-15 Barsoum Michel W Reduction of spontaneous metal whisker formation

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52149991A (en) * 1976-06-09 1977-12-13 Fujitsu Ltd Production of semiconductor integrated circuit

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA729096A (en) * 1966-03-01 G. Herkart Paul Method of growing crystals
NL104388C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1956-11-28
NL212548A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1956-11-28
US3261671A (en) * 1963-11-29 1966-07-19 Philips Corp Device for treating semi-conductor materials by melting
US3342559A (en) * 1964-04-27 1967-09-19 Westinghouse Electric Corp Apparatus for producing dendrites
GB1095587A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1965-09-24
FR1522416A (fr) * 1967-03-14 1968-04-26 Comp Generale Electricite Perfectionnements au procédé d'obtention de cristaux par tirage
DE1769860A1 (de) * 1968-07-26 1971-11-11 Siemens Ag Vorrichtung zum Ziehen von versetzungsfreien Halbleitereinkristallstaeben
GB1366532A (en) * 1971-04-21 1974-09-11 Nat Res Dev Apparatus for the preparation and growth of crystalline material

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52149991A (en) * 1976-06-09 1977-12-13 Fujitsu Ltd Production of semiconductor integrated circuit

Also Published As

Publication number Publication date
FR2374081A1 (fr) 1978-07-13
DE2755006C3 (de) 1982-04-29
FR2374081B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-01-08
JPS5633359B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1981-08-03
DE2755006A1 (de) 1978-06-29
GB1591670A (en) 1981-06-24
DE2755006B2 (de) 1981-07-23
CA1078299A (en) 1980-05-27
US4116642A (en) 1978-09-26

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