GB1587773A - Short-channel length mis fiield-effect transistors - Google Patents
Short-channel length mis fiield-effect transistors Download PDFInfo
- Publication number
- GB1587773A GB1587773A GB3619/78A GB361978A GB1587773A GB 1587773 A GB1587773 A GB 1587773A GB 3619/78 A GB3619/78 A GB 3619/78A GB 361978 A GB361978 A GB 361978A GB 1587773 A GB1587773 A GB 1587773A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- effect transistor
- field
- layer
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 40
- 230000005669 field effect Effects 0.000 claims description 38
- 239000004065 semiconductor Substances 0.000 claims description 37
- 238000002513 implantation Methods 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 239000002019 doping agent Substances 0.000 claims description 17
- 150000002500 ions Chemical class 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052698 phosphorus Inorganic materials 0.000 claims description 10
- 239000011574 phosphorus Substances 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 claims 1
- 239000005368 silicate glass Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 10
- 239000002800 charge carrier Substances 0.000 description 8
- 239000004922 lacquer Substances 0.000 description 8
- -1 phosphorus ions Chemical class 0.000 description 8
- 238000000151 deposition Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000035515 penetration Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000003631 wet chemical etching Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 206010037660 Pyrexia Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/65—Lateral DMOS [LDMOS] FETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/65—Lateral DMOS [LDMOS] FETs
- H10D30/657—Lateral DMOS [LDMOS] FETs having substrates comprising insulating layers, e.g. SOI-LDMOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
- H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
- H10D30/6717—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions the source and the drain regions being asymmetrical
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
- H10D30/6759—Silicon-on-sapphire [SOS] substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
- H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
- H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2703877A DE2703877C2 (de) | 1977-01-31 | 1977-01-31 | MIS-Transistor von kurzer Kanallänge und Verfahren zu seiner Herstellung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1587773A true GB1587773A (en) | 1981-04-08 |
Family
ID=5999963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3619/78A Expired GB1587773A (en) | 1977-01-31 | 1978-01-30 | Short-channel length mis fiield-effect transistors |
Country Status (5)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5489787A (en) * | 1993-07-05 | 1996-02-06 | U.S. Philips Corporation | Semiconductor device having an insulated gate field effect transistor and exhibiting thyristor action |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2754066A1 (de) * | 1977-12-05 | 1979-06-13 | Siemens Ag | Herstellung einer integrierten schaltung mit abgestuften schichten aus isolations- und elektrodenmaterial |
| DE2754549A1 (de) * | 1977-12-07 | 1979-06-13 | Siemens Ag | Optoelektronischer sensor nach dem prinzip der ladungsinjektion |
| DE2802838A1 (de) * | 1978-01-23 | 1979-08-16 | Siemens Ag | Mis-feldeffekttransistor mit kurzer kanallaenge |
| JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
| US5191396B1 (en) * | 1978-10-13 | 1995-12-26 | Int Rectifier Corp | High power mosfet with low on-resistance and high breakdown voltage |
| US4705759B1 (en) * | 1978-10-13 | 1995-02-14 | Int Rectifier Corp | High power mosfet with low on-resistance and high breakdown voltage |
| CA1138571A (en) * | 1978-12-15 | 1982-12-28 | Wolfgang M. Feist | Semiconductor structures and manufacturing methods |
| DE2912535C2 (de) * | 1979-03-29 | 1983-04-07 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung eines MIS-Feldeffekt-Transistors mit einstellbarer, extrem kurzer Kanallänge |
| DE2926417A1 (de) * | 1979-06-29 | 1981-01-22 | Siemens Ag | Dynamische halbleiterspeicherzelle und verfahren zu ihrer herstellung |
| US4378629A (en) * | 1979-08-10 | 1983-04-05 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor, fabrication method |
| US5298787A (en) * | 1979-08-10 | 1994-03-29 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor |
| DE2947350A1 (de) * | 1979-11-23 | 1981-05-27 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von mnos-speichertransistoren mit sehr kurzer kanallaenge in silizium-gate-technologie |
| DE3017313A1 (de) * | 1980-05-06 | 1981-11-12 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hoher blockierspannung und verfahren zu seiner herstellung |
| US4404576A (en) * | 1980-06-09 | 1983-09-13 | Xerox Corporation | All implanted MOS transistor |
| US4300150A (en) * | 1980-06-16 | 1981-11-10 | North American Philips Corporation | Lateral double-diffused MOS transistor device |
| DE3040775C2 (de) * | 1980-10-29 | 1987-01-15 | Siemens AG, 1000 Berlin und 8000 München | Steuerbares MIS-Halbleiterbauelement |
| EP0083447B1 (en) * | 1981-12-30 | 1989-04-26 | Thomson Components-Mostek Corporation | Triple diffused short channel device structure |
| US4574208A (en) * | 1982-06-21 | 1986-03-04 | Eaton Corporation | Raised split gate EFET and circuitry |
| US4672423A (en) * | 1982-09-30 | 1987-06-09 | International Business Machines Corporation | Voltage controlled resonant transmission semiconductor device |
| DE3301648A1 (de) * | 1983-01-19 | 1984-07-19 | Siemens AG, 1000 Berlin und 8000 München | Misfet mit eingangsverstaerker |
| US4602965A (en) * | 1984-03-13 | 1986-07-29 | Communications Satellite Corporation | Method of making FETs in GaAs by dual species implantation of silicon and boron |
| US4713681A (en) * | 1985-05-31 | 1987-12-15 | Harris Corporation | Structure for high breakdown PN diode with relatively high surface doping |
| US4818715A (en) * | 1987-07-09 | 1989-04-04 | Industrial Technology Research Institute | Method of fabricating a LDDFET with self-aligned silicide |
| US5550069A (en) * | 1990-06-23 | 1996-08-27 | El Mos Electronik In Mos Technologie Gmbh | Method for producing a PMOS transistor |
| IT1250233B (it) * | 1991-11-29 | 1995-04-03 | St Microelectronics Srl | Procedimento per la fabbricazione di circuiti integrati in tecnologia mos. |
| JP3435173B2 (ja) * | 1992-07-10 | 2003-08-11 | 株式会社日立製作所 | 半導体装置 |
| US5374575A (en) * | 1993-11-23 | 1994-12-20 | Goldstar Electron Co., Ltd. | Method for fabricating MOS transistor |
| DE69329999T2 (de) * | 1993-12-29 | 2001-09-13 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | Verfahren zur Herstellung integrierter Schaltungen, insbesondere intelligenter Leistungsanordnungen |
| EP0689238B1 (en) * | 1994-06-23 | 2002-02-20 | STMicroelectronics S.r.l. | MOS-technology power device manufacturing process |
| US5817546A (en) * | 1994-06-23 | 1998-10-06 | Stmicroelectronics S.R.L. | Process of making a MOS-technology power device |
| DE69434937D1 (de) * | 1994-06-23 | 2007-04-19 | St Microelectronics Srl | Verfahren zur Herstellung von Leistungsbauteilen in MOS-Technologie |
| DE69429915D1 (de) * | 1994-07-04 | 2002-03-28 | St Microelectronics Srl | Verfahren zur Herstellung von Leistungsbauteilen hoher Dichte in MOS-Technologie |
| JP2661561B2 (ja) * | 1994-10-27 | 1997-10-08 | 日本電気株式会社 | 薄膜トランジスタおよびその製造方法 |
| JPH08316426A (ja) * | 1995-05-16 | 1996-11-29 | Nittetsu Semiconductor Kk | Ｍｏｓ型半導体装置およびその製造方法 |
| US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
| EP1035566A3 (en) * | 1999-03-03 | 2000-10-04 | Infineon Technologies North America Corp. | Method for forming a buried doped layer with connecting portions within a semiconductive device |
| JP4198006B2 (ja) * | 2003-07-25 | 2008-12-17 | 株式会社リコー | 半導体装置の製造方法 |
| KR100552809B1 (ko) * | 2003-12-24 | 2006-02-22 | 동부아남반도체 주식회사 | 드레인-소스 브레이크다운 전압을 개선한 반도체 소자 및그 제조 방법 |
| US20060255412A1 (en) * | 2005-05-13 | 2006-11-16 | Nirmal Ramaswamy | Enhanced access devices using selective epitaxial silicon over the channel region during the formation of a semiconductor device and systems including same |
| EP4053916B1 (en) * | 2021-03-01 | 2024-07-03 | Hitachi Energy Ltd | Power semiconductor device |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL6501946A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1965-02-17 | 1966-08-18 | ||
| GB1261723A (en) * | 1968-03-11 | 1972-01-26 | Associated Semiconductor Mft | Improvements in and relating to semiconductor devices |
| GB1316555A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1969-08-12 | 1973-05-09 | ||
| JPS4831514B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1969-09-18 | 1973-09-29 | ||
| US3604990A (en) * | 1970-04-01 | 1971-09-14 | Gen Electric | Smoothly changing voltage-variable capacitor having an extendible pn junction region |
| JPS53673B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1971-11-04 | 1978-01-11 | ||
| US3846822A (en) * | 1973-10-05 | 1974-11-05 | Bell Telephone Labor Inc | Methods for making field effect transistors |
| US4001048A (en) * | 1974-06-26 | 1977-01-04 | Signetics Corporation | Method of making metal oxide semiconductor structures using ion implantation |
| DE2460967A1 (de) * | 1974-12-21 | 1976-07-01 | Philips Patentverwaltung | Halbleiterbauelement mit einer mos-transistorstruktur |
| FR2325194A1 (fr) * | 1975-09-16 | 1977-04-15 | Ibm | Dispositif de pompage de charge pour semi-conducteur et son procede de fabrication |
| JPS6042626B2 (ja) * | 1976-05-18 | 1985-09-24 | 松下電器産業株式会社 | 半導体装置の製造方法 |
-
1977
- 1977-01-31 DE DE2703877A patent/DE2703877C2/de not_active Expired
-
1978
- 1978-01-17 US US05/870,216 patent/US4190850A/en not_active Expired - Lifetime
- 1978-01-27 FR FR7802331A patent/FR2379168A1/fr active Granted
- 1978-01-30 GB GB3619/78A patent/GB1587773A/en not_active Expired
- 1978-01-30 JP JP920178A patent/JPS5396774A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5489787A (en) * | 1993-07-05 | 1996-02-06 | U.S. Philips Corporation | Semiconductor device having an insulated gate field effect transistor and exhibiting thyristor action |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2703877A1 (de) | 1978-08-03 |
| FR2379168B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1984-01-27 |
| JPH0130312B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-06-19 |
| JPS5396774A (en) | 1978-08-24 |
| FR2379168A1 (fr) | 1978-08-25 |
| DE2703877C2 (de) | 1982-06-03 |
| US4190850A (en) | 1980-02-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PE20 | Patent expired after termination of 20 years |
Effective date: 19980129 |