GB1559581A - Complementary mosfet device - Google Patents
Complementary mosfet device Download PDFInfo
- Publication number
- GB1559581A GB1559581A GB29281/76A GB2928176A GB1559581A GB 1559581 A GB1559581 A GB 1559581A GB 29281/76 A GB29281/76 A GB 29281/76A GB 2928176 A GB2928176 A GB 2928176A GB 1559581 A GB1559581 A GB 1559581A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- well layer
- transistor
- base
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000000295 complement effect Effects 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 93
- 239000004065 semiconductor Substances 0.000 claims abstract description 60
- 230000003071 parasitic effect Effects 0.000 claims abstract description 41
- 230000003321 amplification Effects 0.000 claims description 40
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 40
- 241000153282 Theope Species 0.000 claims 1
- 230000002159 abnormal effect Effects 0.000 description 53
- 238000010586 diagram Methods 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 11
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000002459 sustained effect Effects 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 108010014172 Factor V Proteins 0.000 description 1
- AYFVYJQAPQTCCC-GBXIJSLDSA-N L-threonine Chemical compound C[C@@H](O)[C@H](N)C(O)=O AYFVYJQAPQTCCC-GBXIJSLDSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50087396A JPS5211871A (en) | 1975-07-18 | 1975-07-18 | Semiconductor device |
| JP50087398A JPS5211873A (en) | 1975-07-18 | 1975-07-18 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1559581A true GB1559581A (en) | 1980-01-23 |
Family
ID=26428680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB29281/76A Expired GB1559581A (en) | 1975-07-18 | 1976-07-14 | Complementary mosfet device |
Country Status (4)
| Country | Link |
|---|---|
| CH (1) | CH611740A5 (enExample) |
| DE (1) | DE2632420C2 (enExample) |
| FR (1) | FR2318502A1 (enExample) |
| GB (1) | GB1559581A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2158640A (en) * | 1984-04-28 | 1985-11-13 | Mitsubishi Electric Corp | Integrated circuit |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1549130A (en) * | 1977-06-01 | 1979-08-01 | Hughes Microelectronics Ltd Cm | Monolithic integrated circuit |
| JPS5591162A (en) * | 1978-12-27 | 1980-07-10 | Fujitsu Ltd | Semiconductor device |
-
1976
- 1976-07-14 GB GB29281/76A patent/GB1559581A/en not_active Expired
- 1976-07-19 DE DE2632420A patent/DE2632420C2/de not_active Expired
- 1976-07-19 CH CH923776A patent/CH611740A5/xx not_active IP Right Cessation
- 1976-07-19 FR FR7621992A patent/FR2318502A1/fr active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2158640A (en) * | 1984-04-28 | 1985-11-13 | Mitsubishi Electric Corp | Integrated circuit |
| US4772930A (en) * | 1984-04-28 | 1988-09-20 | Mitsubishi Denki Kabushiki Kaisha | Complementary metal oxide semiconductor integrated circuit with unequal reference voltages |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2632420C2 (de) | 1986-09-18 |
| FR2318502A1 (fr) | 1977-02-11 |
| DE2632420A1 (de) | 1977-01-20 |
| CH611740A5 (en) | 1979-06-15 |
| FR2318502B1 (enExample) | 1981-03-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| 746 | Register noted 'licences of right' (sect. 46/1977) | ||
| PE20 | Patent expired after termination of 20 years |
Effective date: 19960713 |