CH611740A5 - Semiconductor circuit - Google Patents

Semiconductor circuit

Info

Publication number
CH611740A5
CH611740A5 CH923776A CH923776A CH611740A5 CH 611740 A5 CH611740 A5 CH 611740A5 CH 923776 A CH923776 A CH 923776A CH 923776 A CH923776 A CH 923776A CH 611740 A5 CH611740 A5 CH 611740A5
Authority
CH
Switzerland
Prior art keywords
semiconductor circuit
semiconductor
circuit
Prior art date
Application number
CH923776A
Inventor
Kazuo Satou
Mitsuhiko Oeno
Original Assignee
Tokyo Shibaura Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP50087396A external-priority patent/JPS5211871A/en
Priority claimed from JP50087398A external-priority patent/JPS5211873A/en
Application filed by Tokyo Shibaura Electric Co filed Critical Tokyo Shibaura Electric Co
Publication of CH611740A5 publication Critical patent/CH611740A5/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CH923776A 1975-07-18 1976-07-19 Semiconductor circuit CH611740A5 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP50087396A JPS5211871A (en) 1975-07-18 1975-07-18 Semiconductor device
JP50087398A JPS5211873A (en) 1975-07-18 1975-07-18 Semiconductor device

Publications (1)

Publication Number Publication Date
CH611740A5 true CH611740A5 (en) 1979-06-15

Family

ID=26428680

Family Applications (1)

Application Number Title Priority Date Filing Date
CH923776A CH611740A5 (en) 1975-07-18 1976-07-19 Semiconductor circuit

Country Status (4)

Country Link
CH (1) CH611740A5 (en)
DE (1) DE2632420C2 (en)
FR (1) FR2318502A1 (en)
GB (1) GB1559581A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1549130A (en) * 1977-06-01 1979-08-01 Hughes Microelectronics Ltd Cm Monolithic integrated circuit
JPS5591162A (en) * 1978-12-27 1980-07-10 Fujitsu Ltd Semiconductor device
JPS60231356A (en) * 1984-04-28 1985-11-16 Mitsubishi Electric Corp Complementary type metal-oxide-film semiconductor integrated circuit device

Also Published As

Publication number Publication date
DE2632420A1 (en) 1977-01-20
FR2318502B1 (en) 1981-03-27
DE2632420C2 (en) 1986-09-18
GB1559581A (en) 1980-01-23
FR2318502A1 (en) 1977-02-11

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Legal Events

Date Code Title Description
PL Patent ceased