DE2632420C2 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung

Info

Publication number
DE2632420C2
DE2632420C2 DE2632420A DE2632420A DE2632420C2 DE 2632420 C2 DE2632420 C2 DE 2632420C2 DE 2632420 A DE2632420 A DE 2632420A DE 2632420 A DE2632420 A DE 2632420A DE 2632420 C2 DE2632420 C2 DE 2632420C2
Authority
DE
Germany
Prior art keywords
semiconductor substrate
well
current
contact
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2632420A
Other languages
German (de)
English (en)
Other versions
DE2632420A1 (de
Inventor
Kazuo Yokohama Satou
Mitsuhiko Fujisawa Kanagawa Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP50087398A external-priority patent/JPS5211873A/ja
Priority claimed from JP50087396A external-priority patent/JPS5211871A/ja
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of DE2632420A1 publication Critical patent/DE2632420A1/de
Application granted granted Critical
Publication of DE2632420C2 publication Critical patent/DE2632420C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE2632420A 1975-07-18 1976-07-19 Halbleitervorrichtung Expired DE2632420C2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP50087398A JPS5211873A (en) 1975-07-18 1975-07-18 Semiconductor device
JP50087396A JPS5211871A (en) 1975-07-18 1975-07-18 Semiconductor device

Publications (2)

Publication Number Publication Date
DE2632420A1 DE2632420A1 (de) 1977-01-20
DE2632420C2 true DE2632420C2 (de) 1986-09-18

Family

ID=26428680

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2632420A Expired DE2632420C2 (de) 1975-07-18 1976-07-19 Halbleitervorrichtung

Country Status (4)

Country Link
CH (1) CH611740A5 (enExample)
DE (1) DE2632420C2 (enExample)
FR (1) FR2318502A1 (enExample)
GB (1) GB1559581A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1549130A (en) * 1977-06-01 1979-08-01 Hughes Microelectronics Ltd Cm Monolithic integrated circuit
JPS5591162A (en) * 1978-12-27 1980-07-10 Fujitsu Ltd Semiconductor device
JPS60231356A (ja) * 1984-04-28 1985-11-16 Mitsubishi Electric Corp 相補形金属酸化膜半導体集積回路装置

Also Published As

Publication number Publication date
FR2318502B1 (enExample) 1981-03-27
GB1559581A (en) 1980-01-23
CH611740A5 (en) 1979-06-15
FR2318502A1 (fr) 1977-02-11
DE2632420A1 (de) 1977-01-20

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Legal Events

Date Code Title Description
8128 New person/name/address of the agent

Representative=s name: HENKEL, G., DR.PHIL. FEILER, L., DR.RER.NAT. HAENZ

D2 Grant after examination
8363 Opposition against the patent
8327 Change in the person/name/address of the patent owner

Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP

8366 Restricted maintained after opposition proceedings
8305 Restricted maintenance of patent after opposition
D4 Patent maintained restricted