FR2318502B1 - - Google Patents
Info
- Publication number
- FR2318502B1 FR2318502B1 FR7621992A FR7621992A FR2318502B1 FR 2318502 B1 FR2318502 B1 FR 2318502B1 FR 7621992 A FR7621992 A FR 7621992A FR 7621992 A FR7621992 A FR 7621992A FR 2318502 B1 FR2318502 B1 FR 2318502B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50087398A JPS5211873A (en) | 1975-07-18 | 1975-07-18 | Semiconductor device |
| JP50087396A JPS5211871A (en) | 1975-07-18 | 1975-07-18 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2318502A1 FR2318502A1 (fr) | 1977-02-11 |
| FR2318502B1 true FR2318502B1 (enExample) | 1981-03-27 |
Family
ID=26428680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7621992A Granted FR2318502A1 (fr) | 1975-07-18 | 1976-07-19 | Dispositif perfectionne a transistors a effet de champ a metal-oxyde-semi-conducteur complementaire |
Country Status (4)
| Country | Link |
|---|---|
| CH (1) | CH611740A5 (enExample) |
| DE (1) | DE2632420C2 (enExample) |
| FR (1) | FR2318502A1 (enExample) |
| GB (1) | GB1559581A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1549130A (en) * | 1977-06-01 | 1979-08-01 | Hughes Microelectronics Ltd Cm | Monolithic integrated circuit |
| JPS5591162A (en) * | 1978-12-27 | 1980-07-10 | Fujitsu Ltd | Semiconductor device |
| JPS60231356A (ja) * | 1984-04-28 | 1985-11-16 | Mitsubishi Electric Corp | 相補形金属酸化膜半導体集積回路装置 |
-
1976
- 1976-07-14 GB GB29281/76A patent/GB1559581A/en not_active Expired
- 1976-07-19 CH CH923776A patent/CH611740A5/xx not_active IP Right Cessation
- 1976-07-19 DE DE2632420A patent/DE2632420C2/de not_active Expired
- 1976-07-19 FR FR7621992A patent/FR2318502A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB1559581A (en) | 1980-01-23 |
| CH611740A5 (en) | 1979-06-15 |
| FR2318502A1 (fr) | 1977-02-11 |
| DE2632420A1 (de) | 1977-01-20 |
| DE2632420C2 (de) | 1986-09-18 |