FR2318502B1 - - Google Patents
Info
- Publication number
- FR2318502B1 FR2318502B1 FR7621992A FR7621992A FR2318502B1 FR 2318502 B1 FR2318502 B1 FR 2318502B1 FR 7621992 A FR7621992 A FR 7621992A FR 7621992 A FR7621992 A FR 7621992A FR 2318502 B1 FR2318502 B1 FR 2318502B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50087396A JPS5211871A (en) | 1975-07-18 | 1975-07-18 | Semiconductor device |
| JP50087398A JPS5211873A (en) | 1975-07-18 | 1975-07-18 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2318502A1 FR2318502A1 (fr) | 1977-02-11 |
| FR2318502B1 true FR2318502B1 (fr) | 1981-03-27 |
Family
ID=26428680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7621992A Granted FR2318502A1 (fr) | 1975-07-18 | 1976-07-19 | Dispositif perfectionne a transistors a effet de champ a metal-oxyde-semi-conducteur complementaire |
Country Status (4)
| Country | Link |
|---|---|
| CH (1) | CH611740A5 (fr) |
| DE (1) | DE2632420C2 (fr) |
| FR (1) | FR2318502A1 (fr) |
| GB (1) | GB1559581A (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1549130A (en) * | 1977-06-01 | 1979-08-01 | Hughes Microelectronics Ltd Cm | Monolithic integrated circuit |
| JPS5591162A (en) * | 1978-12-27 | 1980-07-10 | Fujitsu Ltd | Semiconductor device |
| JPS60231356A (ja) * | 1984-04-28 | 1985-11-16 | Mitsubishi Electric Corp | 相補形金属酸化膜半導体集積回路装置 |
-
1976
- 1976-07-14 GB GB2928176A patent/GB1559581A/en not_active Expired
- 1976-07-19 CH CH923776A patent/CH611740A5/xx not_active IP Right Cessation
- 1976-07-19 FR FR7621992A patent/FR2318502A1/fr active Granted
- 1976-07-19 DE DE19762632420 patent/DE2632420C2/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1559581A (en) | 1980-01-23 |
| CH611740A5 (en) | 1979-06-15 |
| FR2318502A1 (fr) | 1977-02-11 |
| DE2632420A1 (de) | 1977-01-20 |
| DE2632420C2 (de) | 1986-09-18 |