GB1548877A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1548877A
GB1548877A GB27093/75A GB2709375A GB1548877A GB 1548877 A GB1548877 A GB 1548877A GB 27093/75 A GB27093/75 A GB 27093/75A GB 2709375 A GB2709375 A GB 2709375A GB 1548877 A GB1548877 A GB 1548877A
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
semiconductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB27093/75A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Components Ltd
Original Assignee
Mullard Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mullard Ltd filed Critical Mullard Ltd
Priority to GB27093/75A priority Critical patent/GB1548877A/en
Priority to US05/688,008 priority patent/US4074302A/en
Priority to AU15118/76A priority patent/AU504261B2/en
Priority to NL7606746A priority patent/NL7606746A/xx
Priority to IT7624659A priority patent/IT1063691B/it
Priority to SE7607216A priority patent/SE410911B/xx
Priority to CA255,478A priority patent/CA1078516A/en
Priority to ES449176A priority patent/ES449176A1/es
Priority to JP51074573A priority patent/JPS5217772A/ja
Priority to CH819976A priority patent/CH613308A5/xx
Priority to DE2628532A priority patent/DE2628532C2/de
Priority to FR7635732A priority patent/FR2334172B1/fr
Publication of GB1548877A publication Critical patent/GB1548877A/en
Priority to JP5129881A priority patent/JPS56162870A/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/454—Output structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
GB27093/75A 1975-06-26 1975-06-26 Semiconductor devices Expired GB1548877A (en)

Priority Applications (13)

Application Number Priority Date Filing Date Title
GB27093/75A GB1548877A (en) 1975-06-26 1975-06-26 Semiconductor devices
US05/688,008 US4074302A (en) 1975-06-26 1976-05-19 Bulk channel charge coupled semiconductor devices
AU15118/76A AU504261B2 (en) 1975-06-26 1976-06-22 Charge coupled device
NL7606746A NL7606746A (nl) 1975-06-26 1976-06-22 Halfgeleiderinrichting.
ES449176A ES449176A1 (es) 1975-06-26 1976-06-23 Un dispositivo semiconductor perfeccionado.
SE7607216A SE410911B (sv) 1975-06-26 1976-06-23 Halvledaranordning
CA255,478A CA1078516A (en) 1975-06-26 1976-06-23 Bulk charge coupled devices with read out gates
IT7624659A IT1063691B (it) 1975-06-26 1976-06-23 Dispositivo semiconduttore
JP51074573A JPS5217772A (en) 1975-06-26 1976-06-25 Semiconductor device
CH819976A CH613308A5 (en:Method) 1975-06-26 1976-06-25
DE2628532A DE2628532C2 (de) 1975-06-26 1976-06-25 Halbleiteranordnung
FR7635732A FR2334172B1 (fr) 1975-06-26 1976-11-26 Dispositif semi-conducteur
JP5129881A JPS56162870A (en) 1975-06-26 1981-04-07 Semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB27093/75A GB1548877A (en) 1975-06-26 1975-06-26 Semiconductor devices
GB4889475 1975-11-27

Publications (1)

Publication Number Publication Date
GB1548877A true GB1548877A (en) 1979-07-18

Family

ID=26258625

Family Applications (1)

Application Number Title Priority Date Filing Date
GB27093/75A Expired GB1548877A (en) 1975-06-26 1975-06-26 Semiconductor devices

Country Status (12)

Country Link
US (1) US4074302A (en:Method)
JP (2) JPS5217772A (en:Method)
AU (1) AU504261B2 (en:Method)
CA (1) CA1078516A (en:Method)
CH (1) CH613308A5 (en:Method)
DE (1) DE2628532C2 (en:Method)
ES (1) ES449176A1 (en:Method)
FR (1) FR2334172B1 (en:Method)
GB (1) GB1548877A (en:Method)
IT (1) IT1063691B (en:Method)
NL (1) NL7606746A (en:Method)
SE (1) SE410911B (en:Method)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5462462U (en:Method) * 1977-10-11 1979-05-01
US4166223A (en) * 1978-02-06 1979-08-28 Westinghouse Electric Corp. Dual field effect transistor structure for compensating effects of threshold voltage
US4223329A (en) * 1978-06-30 1980-09-16 International Business Machines Corporation Bipolar dual-channel charge-coupled device
US4559638A (en) * 1978-10-23 1985-12-17 Westinghouse Electric Corp. Charge transfer device having an improved read-out portion
US4672645A (en) * 1978-10-23 1987-06-09 Westinghouse Electric Corp. Charge transfer device having an improved read-out portion
US4227201A (en) * 1979-01-22 1980-10-07 Hughes Aircraft Company CCD Readout structure for display applications
CA1164562A (en) * 1980-10-08 1984-03-27 Manabu Itsumi Semiconductor memory device
US4693561A (en) * 1985-12-23 1987-09-15 The United States Of America As Represented By The Secretary Of The Army Amorphous silicon spatial light modulator
JPH04133336A (ja) * 1990-09-25 1992-05-07 Mitsubishi Electric Corp 電荷転送装置
JPH04148536A (ja) * 1990-10-12 1992-05-21 Sony Corp 転送電荷増幅装置
JP3036175B2 (ja) * 1991-11-11 2000-04-24 日本電気株式会社 電荷転送装置
JP2780564B2 (ja) * 1992-05-20 1998-07-30 日本電気株式会社 電荷転送装置
US5331165A (en) * 1992-12-01 1994-07-19 Ball Corporation Split event reduced x-ray imager
US5436476A (en) * 1993-04-14 1995-07-25 Texas Instruments Incorporated CCD image sensor with active transistor pixel
JP2696057B2 (ja) * 1993-05-11 1998-01-14 ニチモウ株式会社 穀類を原料とした生成物の製造方法
US5369047A (en) * 1993-07-01 1994-11-29 Texas Instruments Incorporated Method of making a BCD low noise high sensitivity charge detection amplifier for high performance image sensors
US5357128A (en) * 1993-08-27 1994-10-18 Goldstar Electron Co., Ltd. Charge detecting device
JP3031815B2 (ja) * 1994-04-01 2000-04-10 シャープ株式会社 電荷検出素子及びその製造方法並びに電荷転送検出装置
EP0719456B1 (en) * 1994-06-23 1999-09-29 Koninklijke Philips Electronics N.V. Charge coupled device, and imaging device comprising such a charge coupled device
JP2816824B2 (ja) * 1995-09-11 1998-10-27 エルジイ・セミコン・カンパニイ・リミテッド Ｃｃｄ固体撮像素子
WO1997012402A1 (en) * 1995-09-29 1997-04-03 Analog Devices, Inc. Semiconductor charge potential wells with integrated diffusions
US5838034A (en) * 1996-12-10 1998-11-17 National Science Council Infrared optical bulk channel field effect transistor for greater effectiveness
DE19941148B4 (de) * 1999-08-30 2006-08-10 Infineon Technologies Ag Speicher mit Grabenkondensator und Auswahltransistor und Verfahren zu seiner Herstellung
DK1513202T3 (da) * 2003-09-02 2010-05-10 Univ Bruxelles Detektor til elektromagnetisk stråling ved hjælp af en majoritetsstrøm
US8906563B2 (en) 2011-11-04 2014-12-09 Fluidic, Inc. Internal convection cell
DE102012206089B4 (de) 2012-03-15 2017-02-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterstruktur, verfahren zum betreiben derselben und herstellungsverfahren
WO2017057112A1 (ja) * 2015-10-02 2017-04-06 国立研究開発法人産業技術総合研究所 マルチプレクサ及びこれを用いた集積回路
CA3019358A1 (en) 2016-07-22 2018-01-25 Nantenergy, Inc. Mist elimination system for electrochemical cells
BR112019000713B1 (pt) 2016-07-22 2023-04-25 Nantenergy, Inc Célula eletroquímica e método de conservar umidade dentro de uma célula eletroquímica
CN120184457A (zh) 2018-06-29 2025-06-20 福恩能源公司 金属空气电化学电池构架
CN112823444B (zh) 2018-06-29 2024-10-29 福恩能源公司 滚动膜片密封件
CN109728020A (zh) * 2018-12-29 2019-05-07 中国电子科技集团公司第四十四研究所 一种三相驱动结构ccd的水平区结构及其驱动电路
CN114207915A (zh) 2019-06-28 2022-03-18 福恩能源公司 金属-空气电池组的设备架构
EP4147296A4 (en) 2020-05-06 2025-08-13 Form Energy Inc ELECTROCHEMICAL ENERGY STORAGE SYSTEM WITH DECOUPLED ELECTRODE
CN112420808A (zh) * 2020-11-10 2021-02-26 浙江大学杭州国际科创中心 石墨烯/硅基体沟道电子倍增电荷耦合器件及其读出方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3739240A (en) * 1971-04-06 1973-06-12 Bell Telephone Labor Inc Buried channel charge coupled devices
NL176406C (nl) * 1971-10-27 1985-04-01 Philips Nv Ladingsgekoppelde halfgeleiderinrichting met een halfgeleiderlichaam bevattende een aan een oppervlak grenzende halfgeleiderlaag en middelen om informatie in de vorm van pakketten meerderheidsladingsdragers in te voeren in de halfgeleiderlaag.
NL165886C (nl) * 1972-04-03 1981-05-15 Hitachi Ltd Halfgeleiderinrichting van het ladingsgekoppelde type voor het opslaan en in volgorgde overdragen van pakketten meerderheidsladingdragers.
GB1457253A (en) * 1972-12-01 1976-12-01 Mullard Ltd Semiconductor charge transfer devices
NL181766C (nl) * 1973-03-19 1987-10-16 Philips Nv Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen.
JPS5028281A (en:Method) * 1973-07-13 1975-03-22
US3987475A (en) * 1975-11-10 1976-10-19 Northern Electric Company Limited Nondestructive charge sensing in a charge coupled device

Also Published As

Publication number Publication date
US4074302A (en) 1978-02-14
CH613308A5 (en:Method) 1979-09-14
AU1511876A (en) 1978-01-05
IT1063691B (it) 1985-02-11
ES449176A1 (es) 1977-12-01
SE7607216L (sv) 1976-12-27
DE2628532A1 (de) 1977-02-10
JPS5711506B2 (en:Method) 1982-03-04
CA1078516A (en) 1980-05-27
NL7606746A (nl) 1976-12-28
SE410911B (sv) 1979-11-12
JPS5217772A (en) 1977-02-09
JPS56162870A (en) 1981-12-15
AU504261B2 (en) 1979-10-11
FR2334172B1 (fr) 1984-03-23
FR2334172A1 (fr) 1977-07-01
DE2628532C2 (de) 1985-03-07

Similar Documents

Publication Publication Date Title
GB1542651A (en) Semiconductor devices
GB1548877A (en) Semiconductor devices
JPS5245288A (en) Semiconductor device
JPS51117880A (en) Semiconductor device
JPS527678A (en) Semiconductor device
JPS5216990A (en) Semiconductor device
ZA766145B (en) Semiconductor devices
GB1558349A (en) Making semiconductor device
GB1541683A (en) Liquid-monitoring devices
GB1553417A (en) Semiconductor device manufacture
GB1543994A (en) Multipackaging devices
JPS5279661A (en) Semiconductor device
JPS51148384A (en) Semiconductor circuit
GB1552161A (en) Semiconductor devices
JPS5238892A (en) Semiconductor device
JPS51123083A (en) Integrated semiconductor device
JPS5234676A (en) Semiconductor device
GB1554273A (en) Semiconductor device manufacture
GB1557961A (en) Semiconductor circuits
JPS52119068A (en) Semiconductor device
JPS529380A (en) Semiconductor device
JPS51129146A (en) Semiconductor circuit
GB1553243A (en) Semiconductor
HK14980A (en) Semiconductor devices
GB1546758A (en) Electron-emissive semiconductor devices

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee