GB1521625A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1521625A
GB1521625A GB24798/76A GB2479876A GB1521625A GB 1521625 A GB1521625 A GB 1521625A GB 24798/76 A GB24798/76 A GB 24798/76A GB 2479876 A GB2479876 A GB 2479876A GB 1521625 A GB1521625 A GB 1521625A
Authority
GB
United Kingdom
Prior art keywords
layer
opening
parasitic capacitance
region
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB24798/76A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1521625A publication Critical patent/GB1521625A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/01Manufacture or treatment
    • H10D30/021Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D64/011
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311Gate electrodes for field-effect devices
    • H10D64/411Gate electrodes for field-effect devices for FETs
    • H10D64/511Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB24798/76A 1975-06-30 1976-06-15 Semiconductor devices Expired GB1521625A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US59199575A 1975-06-30 1975-06-30

Publications (1)

Publication Number Publication Date
GB1521625A true GB1521625A (en) 1978-08-16

Family

ID=24368826

Family Applications (1)

Application Number Title Priority Date Filing Date
GB24798/76A Expired GB1521625A (en) 1975-06-30 1976-06-15 Semiconductor devices

Country Status (6)

Country Link
JP (1) JPS5228276A (enExample)
CA (1) CA1049157A (enExample)
DE (1) DE2621765A1 (enExample)
FR (1) FR2316745A1 (enExample)
GB (1) GB1521625A (enExample)
IT (1) IT1063563B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52112199A (en) * 1976-03-17 1977-09-20 Kyoei Kikou Kk Automatic fastening tool

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3899372A (en) * 1973-10-31 1975-08-12 Ibm Process for controlling insulating film thickness across a semiconductor wafer

Also Published As

Publication number Publication date
FR2316745A1 (fr) 1977-01-28
FR2316745B1 (enExample) 1980-09-26
IT1063563B (it) 1985-02-11
DE2621765A1 (de) 1977-01-20
JPS5228276A (en) 1977-03-03
CA1049157A (en) 1979-02-20

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19950615