IT1063563B - Dispositivo semiconduttore e relativo procedimento di fabbricazione - Google Patents
Dispositivo semiconduttore e relativo procedimento di fabbricazioneInfo
- Publication number
- IT1063563B IT1063563B IT2394076A IT2394076A IT1063563B IT 1063563 B IT1063563 B IT 1063563B IT 2394076 A IT2394076 A IT 2394076A IT 2394076 A IT2394076 A IT 2394076A IT 1063563 B IT1063563 B IT 1063563B
- Authority
- IT
- Italy
- Prior art keywords
- manufacturing procedure
- related manufacturing
- semiconductive device
- semiconductive
- procedure
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US59199575A | 1975-06-30 | 1975-06-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1063563B true IT1063563B (it) | 1985-02-11 |
Family
ID=24368826
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT2394076A IT1063563B (it) | 1975-06-30 | 1976-06-04 | Dispositivo semiconduttore e relativo procedimento di fabbricazione |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5228276A (it) |
CA (1) | CA1049157A (it) |
DE (1) | DE2621765A1 (it) |
FR (1) | FR2316745A1 (it) |
GB (1) | GB1521625A (it) |
IT (1) | IT1063563B (it) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52112199A (en) * | 1976-03-17 | 1977-09-20 | Kyoei Kikou Kk | Automatic fastening tool |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3899372A (en) * | 1973-10-31 | 1975-08-12 | Ibm | Process for controlling insulating film thickness across a semiconductor wafer |
-
1976
- 1976-05-15 DE DE19762621765 patent/DE2621765A1/de not_active Ceased
- 1976-05-17 FR FR7615571A patent/FR2316745A1/fr active Granted
- 1976-06-04 IT IT2394076A patent/IT1063563B/it active
- 1976-06-15 GB GB2479876A patent/GB1521625A/en not_active Expired
- 1976-06-16 JP JP6989076A patent/JPS5228276A/ja active Pending
- 1976-06-16 CA CA76254958A patent/CA1049157A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2316745A1 (fr) | 1977-01-28 |
GB1521625A (en) | 1978-08-16 |
JPS5228276A (en) | 1977-03-03 |
CA1049157A (en) | 1979-02-20 |
FR2316745B1 (it) | 1980-09-26 |
DE2621765A1 (de) | 1977-01-20 |
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