GB1495864A - Inverse planar transistors - Google Patents
Inverse planar transistorsInfo
- Publication number
- GB1495864A GB1495864A GB51227/75A GB5122775A GB1495864A GB 1495864 A GB1495864 A GB 1495864A GB 51227/75 A GB51227/75 A GB 51227/75A GB 5122775 A GB5122775 A GB 5122775A GB 1495864 A GB1495864 A GB 1495864A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- region
- schottky contact
- base zone
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/40—Vertical BJTs
- H10D10/461—Inverted vertical BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19752507148 DE2507148A1 (de) | 1975-02-19 | 1975-02-19 | Inverser planartransistor |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1495864A true GB1495864A (en) | 1977-12-21 |
Family
ID=5939287
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB51227/75A Expired GB1495864A (en) | 1975-02-19 | 1975-12-15 | Inverse planar transistors |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS51107778A (enrdf_load_stackoverflow) |
DE (1) | DE2507148A1 (enrdf_load_stackoverflow) |
FR (1) | FR2301924A1 (enrdf_load_stackoverflow) |
GB (1) | GB1495864A (enrdf_load_stackoverflow) |
IT (1) | IT1055195B (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8410572B2 (en) | 2008-10-24 | 2013-04-02 | Epcos Ag | Bipolar transistor with emitter and/or collector contact structure forming a Schottky contact and method of production |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5276887A (en) * | 1975-12-22 | 1977-06-28 | Fujitsu Ltd | Semiconductor device |
JPS5267275A (en) * | 1976-10-08 | 1977-06-03 | Sony Corp | Semiconductor unit |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3659675A (en) * | 1969-06-30 | 1972-05-02 | Transportation Specialists Inc | Lubrication system and reservoir therefor |
JPS4911659U (enrdf_load_stackoverflow) * | 1972-05-09 | 1974-01-31 |
-
1975
- 1975-02-19 DE DE19752507148 patent/DE2507148A1/de not_active Ceased
- 1975-12-15 GB GB51227/75A patent/GB1495864A/en not_active Expired
-
1976
- 1976-02-10 FR FR7603632A patent/FR2301924A1/fr active Granted
- 1976-02-11 IT IT20063/76A patent/IT1055195B/it active
- 1976-02-18 JP JP51016881A patent/JPS51107778A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8410572B2 (en) | 2008-10-24 | 2013-04-02 | Epcos Ag | Bipolar transistor with emitter and/or collector contact structure forming a Schottky contact and method of production |
Also Published As
Publication number | Publication date |
---|---|
IT1055195B (it) | 1981-12-21 |
FR2301924B1 (enrdf_load_stackoverflow) | 1982-04-23 |
FR2301924A1 (fr) | 1976-09-17 |
JPS51107778A (enrdf_load_stackoverflow) | 1976-09-24 |
DE2507148A1 (de) | 1976-09-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |