GB1495864A - Inverse planar transistors - Google Patents

Inverse planar transistors

Info

Publication number
GB1495864A
GB1495864A GB51227/75A GB5122775A GB1495864A GB 1495864 A GB1495864 A GB 1495864A GB 51227/75 A GB51227/75 A GB 51227/75A GB 5122775 A GB5122775 A GB 5122775A GB 1495864 A GB1495864 A GB 1495864A
Authority
GB
United Kingdom
Prior art keywords
zone
region
schottky contact
base zone
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB51227/75A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1495864A publication Critical patent/GB1495864A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • H10D10/40Vertical BJTs
    • H10D10/461Inverted vertical BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/64Electrodes comprising a Schottky barrier to a semiconductor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
GB51227/75A 1975-02-19 1975-12-15 Inverse planar transistors Expired GB1495864A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752507148 DE2507148A1 (de) 1975-02-19 1975-02-19 Inverser planartransistor

Publications (1)

Publication Number Publication Date
GB1495864A true GB1495864A (en) 1977-12-21

Family

ID=5939287

Family Applications (1)

Application Number Title Priority Date Filing Date
GB51227/75A Expired GB1495864A (en) 1975-02-19 1975-12-15 Inverse planar transistors

Country Status (5)

Country Link
JP (1) JPS51107778A (enrdf_load_stackoverflow)
DE (1) DE2507148A1 (enrdf_load_stackoverflow)
FR (1) FR2301924A1 (enrdf_load_stackoverflow)
GB (1) GB1495864A (enrdf_load_stackoverflow)
IT (1) IT1055195B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8410572B2 (en) 2008-10-24 2013-04-02 Epcos Ag Bipolar transistor with emitter and/or collector contact structure forming a Schottky contact and method of production

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5276887A (en) * 1975-12-22 1977-06-28 Fujitsu Ltd Semiconductor device
JPS5267275A (en) * 1976-10-08 1977-06-03 Sony Corp Semiconductor unit

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3659675A (en) * 1969-06-30 1972-05-02 Transportation Specialists Inc Lubrication system and reservoir therefor
JPS4911659U (enrdf_load_stackoverflow) * 1972-05-09 1974-01-31

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8410572B2 (en) 2008-10-24 2013-04-02 Epcos Ag Bipolar transistor with emitter and/or collector contact structure forming a Schottky contact and method of production

Also Published As

Publication number Publication date
IT1055195B (it) 1981-12-21
FR2301924B1 (enrdf_load_stackoverflow) 1982-04-23
FR2301924A1 (fr) 1976-09-17
JPS51107778A (enrdf_load_stackoverflow) 1976-09-24
DE2507148A1 (de) 1976-09-02

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee