GB1492222A - Solid-state transistor circuit - Google Patents

Solid-state transistor circuit

Info

Publication number
GB1492222A
GB1492222A GB14433/75A GB1443375A GB1492222A GB 1492222 A GB1492222 A GB 1492222A GB 14433/75 A GB14433/75 A GB 14433/75A GB 1443375 A GB1443375 A GB 1443375A GB 1492222 A GB1492222 A GB 1492222A
Authority
GB
United Kingdom
Prior art keywords
transistor
stage
transistors
april
gate bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB14433/75A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bulova Watch Co Inc
Original Assignee
Bulova Watch Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bulova Watch Co Inc filed Critical Bulova Watch Co Inc
Publication of GB1492222A publication Critical patent/GB1492222A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/354—Astable circuits
    • H03K3/3545—Stabilisation of output, e.g. using crystal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying
    • H03K5/023—Shaping pulses by amplifying using field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/162—FETs are biased in the weak inversion region

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Amplifiers (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Logic Circuits (AREA)
GB14433/75A 1974-04-08 1975-04-08 Solid-state transistor circuit Expired GB1492222A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US459169A US3913026A (en) 1974-04-08 1974-04-08 Mos transistor gain block

Publications (1)

Publication Number Publication Date
GB1492222A true GB1492222A (en) 1977-11-16

Family

ID=23823688

Family Applications (1)

Application Number Title Priority Date Filing Date
GB14433/75A Expired GB1492222A (en) 1974-04-08 1975-04-08 Solid-state transistor circuit

Country Status (7)

Country Link
US (1) US3913026A (en, 2012)
JP (1) JPS50143459A (en, 2012)
CA (1) CA1027190A (en, 2012)
CH (1) CH588771A5 (en, 2012)
DE (1) DE2515309C3 (en, 2012)
FR (1) FR2275066A1 (en, 2012)
GB (1) GB1492222A (en, 2012)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3946327A (en) * 1974-10-23 1976-03-23 Rca Corporation Amplifier employing complementary field-effect transistors
US4071830A (en) * 1975-07-03 1978-01-31 Motorola, Inc. Complementary field effect transistor linear amplifier
US4016434A (en) * 1975-09-04 1977-04-05 International Business Machines Corporation Load gate compensator circuit
JPS5931863B2 (ja) * 1976-01-07 1984-08-04 株式会社日立製作所 電圧出力回路
US4093909A (en) * 1976-07-21 1978-06-06 General Electric Company Method and apparatus for operating a semiconductor integrated circuit at minimum power requirements
JPS53148957A (en) * 1977-05-31 1978-12-26 Nec Corp Switching circuit
US4135102A (en) * 1977-07-18 1979-01-16 Mostek Corporation High performance inverter circuits
GB1592800A (en) * 1977-12-30 1981-07-08 Philips Electronic Associated Linear amplifier
US4201947A (en) * 1978-02-10 1980-05-06 Rca Corporation Long-tailed-pair connections of MOSFET's operated in sub-threshold region
US4224539A (en) * 1978-09-05 1980-09-23 Motorola, Inc. FET Voltage level detecting circuit
US4260946A (en) * 1979-03-22 1981-04-07 Rca Corporation Reference voltage circuit using nested diode means
US4275313A (en) * 1979-04-09 1981-06-23 Bell Telephone Laboratories, Incorporated Current limiting output circuit with output feedback
US4323846A (en) * 1979-06-21 1982-04-06 Rockwell International Corporation Radiation hardened MOS voltage generator circuit
US4306185A (en) * 1980-07-01 1981-12-15 Motorola, Inc. Breakdown voltage protection circuit
JPS5750109A (en) * 1980-09-10 1982-03-24 Toshiba Corp High impedance circuit for integrated circuit
EP0077771A1 (en) * 1981-04-16 1983-05-04 Mostek Corporation Current limiting driver circuit
US4347447A (en) * 1981-04-16 1982-08-31 Mostek Corporation Current limiting MOS transistor driver circuit
JPS5886362U (ja) * 1981-12-07 1983-06-11 セイコーエプソン株式会社 オ−トカツタ−装置
EP0088291B1 (en) * 1982-02-26 1985-07-10 Kabushiki Kaisha Toshiba Mos switch circuit
JPS58209206A (ja) * 1982-05-31 1983-12-06 Seiko Instr & Electronics Ltd 電子回路
JPS59151510A (ja) * 1983-02-18 1984-08-30 Hitachi Ltd Ｃ−ｍｏｓ負荷型増幅器
FR2542526A1 (fr) * 1983-03-09 1984-09-14 American Telephone & Telegraph Oscillateur a quartz
US4614882A (en) * 1983-11-22 1986-09-30 Digital Equipment Corporation Bus transceiver including compensation circuit for variations in electrical characteristics of components
US4667256A (en) * 1985-11-25 1987-05-19 Eastman Kodak Company Circuit for electro-optic modulators
DE19534065A1 (de) * 1995-09-14 1996-07-04 Telefunken Microelectron Spannungsverstärkerstufe
JP3508401B2 (ja) * 1996-07-12 2004-03-22 富士通株式会社 増幅回路および多段増幅回路
US5990744A (en) * 1997-11-21 1999-11-23 Lucent Technologies Inc. Wide band process independent gain controllable amplifier stage
GB2416255A (en) * 2004-07-12 2006-01-18 Toumaz Technology Ltd CMOS current mode logic circuits using subthreshold conduction for low power operation
DE102006008284B3 (de) * 2006-02-22 2007-10-25 Infineon Technologies Ag Schaltung mit einer Anordnung zur Detektion einer unterbrochenen Anschlussleitung
JP2012203528A (ja) * 2011-03-24 2012-10-22 Seiko Instruments Inc ボルテージ・レギュレータ
FI20150294A7 (fi) * 2015-10-23 2017-04-24 Ari Paasio Matalan tehonkulutuksen logiikkaperhe

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3289093A (en) * 1964-02-20 1966-11-29 Fairchild Camera Instr Co A. c. amplifier using enhancement-mode field effect devices
US3508084A (en) * 1967-10-06 1970-04-21 Texas Instruments Inc Enhancement-mode mos circuitry
US3518584A (en) * 1968-07-25 1970-06-30 Bell Telephone Labor Inc Gyrator circuit utilizing a plurality of cascaded pairs of insulated-gate,field effect transistors
US3823332A (en) * 1970-01-30 1974-07-09 Rca Corp Mos fet reference voltage supply
JPS5211199B1 (en, 2012) * 1970-05-27 1977-03-29
US3638047A (en) * 1970-07-07 1972-01-25 Gen Instrument Corp Delay and controlled pulse-generating circuit
FR2143553B1 (en, 2012) * 1971-06-29 1974-05-31 Sescosem
JPS5334701B2 (en, 2012) * 1971-09-30 1978-09-21
US3775693A (en) * 1971-11-29 1973-11-27 Moskek Co Mosfet logic inverter for integrated circuits
US3789246A (en) * 1972-02-14 1974-01-29 Rca Corp Insulated dual gate field-effect transistor signal translator having means for reducing its sensitivity to supply voltage variations
US3806741A (en) * 1972-05-17 1974-04-23 Standard Microsyst Smc Self-biasing technique for mos substrate voltage

Also Published As

Publication number Publication date
DE2515309B2 (de) 1977-07-28
CA1027190A (en) 1978-02-28
DE2515309C3 (de) 1978-03-16
DE2515309A1 (de) 1975-10-16
JPS50143459A (en, 2012) 1975-11-18
US3913026A (en) 1975-10-14
FR2275066B1 (en, 2012) 1978-02-03
CH588771A5 (en, 2012) 1977-06-15
FR2275066A1 (fr) 1976-01-09

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee