GB1488860A - Method of manufacturing a semiconductor device having pressed contacts - Google Patents

Method of manufacturing a semiconductor device having pressed contacts

Info

Publication number
GB1488860A
GB1488860A GB5293774A GB5293774A GB1488860A GB 1488860 A GB1488860 A GB 1488860A GB 5293774 A GB5293774 A GB 5293774A GB 5293774 A GB5293774 A GB 5293774A GB 1488860 A GB1488860 A GB 1488860A
Authority
GB
United Kingdom
Prior art keywords
electrode
deposit
layer
semi
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5293774A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cegelec SA
Original Assignee
Cegelec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cegelec SA filed Critical Cegelec SA
Publication of GB1488860A publication Critical patent/GB1488860A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/233—Cathode or anode electrodes for thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
GB5293774A 1973-12-12 1974-12-06 Method of manufacturing a semiconductor device having pressed contacts Expired GB1488860A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7344329A FR2254879B1 (enExample) 1973-12-12 1973-12-12

Publications (1)

Publication Number Publication Date
GB1488860A true GB1488860A (en) 1977-10-12

Family

ID=9129097

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5293774A Expired GB1488860A (en) 1973-12-12 1974-12-06 Method of manufacturing a semiconductor device having pressed contacts

Country Status (6)

Country Link
BE (1) BE822433A (enExample)
DE (1) DE2458410C2 (enExample)
FR (1) FR2254879B1 (enExample)
GB (1) GB1488860A (enExample)
IT (1) IT1030873B (enExample)
NL (1) NL7416194A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4155155A (en) 1977-01-19 1979-05-22 Alsthom-Atlantique Method of manufacturing power semiconductors with pressed contacts
US4156963A (en) 1976-12-28 1979-06-05 Tokyo Shibaura Electric Co., Ltd. Method for manufacturing a semiconductor device

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2431506C3 (de) * 1974-07-01 1979-06-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen eines Thyristors
GB2095904B (en) * 1981-03-23 1985-11-27 Gen Electric Semiconductor device with built-up low resistance contact and laterally conducting second contact
JPS5871633A (ja) * 1981-10-23 1983-04-28 Toshiba Corp 圧接型半導体装置
DE3232837A1 (de) * 1982-09-03 1984-03-08 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen einer 2-ebenen-metallisierung fuer halbleiterbauelemente, insbesondere fuer leistungshalbleiterbauelemente wie thyristoren
JPS60132366A (ja) * 1983-12-21 1985-07-15 Toshiba Corp 半導体装置
EP0220469B1 (de) * 1985-10-15 1989-12-06 Siemens Aktiengesellschaft Leistungsthyristor
DE3840226A1 (de) * 1988-11-29 1990-05-31 Siemens Ag Verfahren zur herstellung von selbstjustierten metallisierungen fuer fet
DE19640242C2 (de) * 1996-09-30 2002-01-10 Infineon Technologies Ag Kathodenanordnung für GTO-Thyristor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3525910A (en) * 1968-05-31 1970-08-25 Westinghouse Electric Corp Contact system for intricate geometry devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4156963A (en) 1976-12-28 1979-06-05 Tokyo Shibaura Electric Co., Ltd. Method for manufacturing a semiconductor device
US4155155A (en) 1977-01-19 1979-05-22 Alsthom-Atlantique Method of manufacturing power semiconductors with pressed contacts

Also Published As

Publication number Publication date
NL7416194A (nl) 1975-06-16
FR2254879B1 (enExample) 1977-09-23
IT1030873B (it) 1979-04-10
FR2254879A1 (enExample) 1975-07-11
BE822433A (fr) 1975-05-20
DE2458410C2 (de) 1983-07-28
DE2458410A1 (de) 1975-06-19

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years

Effective date: 19941205