GB1481474A - Stencil process for high resolution pattern replication - Google Patents

Stencil process for high resolution pattern replication

Info

Publication number
GB1481474A
GB1481474A GB26700/74A GB2670074A GB1481474A GB 1481474 A GB1481474 A GB 1481474A GB 26700/74 A GB26700/74 A GB 26700/74A GB 2670074 A GB2670074 A GB 2670074A GB 1481474 A GB1481474 A GB 1481474A
Authority
GB
United Kingdom
Prior art keywords
stencil
substrate
molecular beam
source
patterned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB26700/74A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB1481474A publication Critical patent/GB1481474A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/04—Pattern deposit, e.g. by using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/944—Shadow

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Spinning Or Twisting Of Yarns (AREA)
  • Weting (AREA)
GB26700/74A 1973-06-18 1974-06-17 Stencil process for high resolution pattern replication Expired GB1481474A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/370,897 US4013502A (en) 1973-06-18 1973-06-18 Stencil process for high resolution pattern replication

Publications (1)

Publication Number Publication Date
GB1481474A true GB1481474A (en) 1977-07-27

Family

ID=23461632

Family Applications (2)

Application Number Title Priority Date Filing Date
GB26700/74A Expired GB1481474A (en) 1973-06-18 1974-06-17 Stencil process for high resolution pattern replication
GB2670074A Expired GB1475702A (en) 1973-06-18 1976-02-26 Supply strand interrupting apparatus for textile yarn forming machines

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB2670074A Expired GB1475702A (en) 1973-06-18 1976-02-26 Supply strand interrupting apparatus for textile yarn forming machines

Country Status (5)

Country Link
US (1) US4013502A (cg-RX-API-DMAC7.html)
JP (1) JPS5037376A (cg-RX-API-DMAC7.html)
DE (1) DE2429026A1 (cg-RX-API-DMAC7.html)
FR (1) FR2233654A1 (cg-RX-API-DMAC7.html)
GB (2) GB1481474A (cg-RX-API-DMAC7.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3601632A1 (de) * 1986-01-21 1987-07-23 Leybold Heraeus Gmbh & Co Kg Verfahren zum herstellen von extraktionsgittern fuer ionenquellen und durch das verfahren hergestellte extraktionsgitter
GB2233983A (en) * 1989-06-07 1991-01-23 Ppg Industries Inc Producing sputtered coating using foraminous mask member
GB2321256A (en) * 1997-01-20 1998-07-22 Coherent Optics Three-dimensional masking
US6168832B1 (en) 1997-01-20 2001-01-02 Coherent, Inc. Three-dimensional masking method for control of coating thickness

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51149784A (en) * 1975-06-17 1976-12-22 Matsushita Electric Ind Co Ltd Solid state light emission device
US4086127A (en) * 1977-07-01 1978-04-25 Westinghouse Electric Corporation Method of fabricating apertured deposition masks used for fabricating thin film transistors
IT1109829B (it) * 1977-07-05 1985-12-23 Ibm Processo di fabbricazione di cercuiti integrati
JPS6026830B2 (ja) * 1977-10-07 1985-06-26 大日本印刷株式会社 極めて微細なメツシユ部とスペ−サ−部を有するメツシユ製品の製造方法
US4303489A (en) * 1978-08-21 1981-12-01 Vac-Tec Systems, Inc. Method and apparatus for producing a variable intensity pattern of sputtering material on a substrate
US4293374A (en) * 1980-03-10 1981-10-06 International Business Machines Corporation High aspect ratio, high resolution mask fabrication
US4331758A (en) * 1980-11-03 1982-05-25 Xerox Corporation Process for the preparation of large area TFT arrays
US4411728A (en) * 1981-03-30 1983-10-25 Agency Of Industrial Science & Technology Method for manufacture of interdigital periodic structure device
US4798165A (en) * 1985-10-07 1989-01-17 Epsilon Apparatus for chemical vapor deposition using an axially symmetric gas flow
US4915057A (en) * 1985-10-23 1990-04-10 Gte Products Corporation Apparatus and method for registration of shadow masked thin-film patterns
US4746548A (en) * 1985-10-23 1988-05-24 Gte Products Corporation Method for registration of shadow masked thin-film patterns
JPH0639357B2 (ja) * 1986-09-08 1994-05-25 新技術開発事業団 元素半導体単結晶薄膜の成長方法
US5361967A (en) * 1993-11-10 1994-11-08 Motorola, Inc. Monolithic circuit fabrication method
EP0898733B1 (de) * 1996-05-13 2001-11-28 Infineon Technologies AG Verfahren zur herstellung einer stencil-maske
US6025278A (en) 1997-08-22 2000-02-15 Micron Technology, Inc. Methods for manufacturing semiconductive wafers and semiconductive material stencil masks
US6187481B1 (en) 1998-08-20 2001-02-13 Micron Technology, Inc. Semiconductive material stencil mask and methods of manufacturing stencil masks from semiconductive material, utilizing different dopants
US6300017B1 (en) * 1998-08-20 2001-10-09 Micron Technology, Inc. Stencil masks and methods of manufacturing stencil masks
JP2002175878A (ja) * 2000-09-28 2002-06-21 Sanyo Electric Co Ltd 層の形成方法及びカラー発光装置の製造方法
US6656614B1 (en) 2001-06-04 2003-12-02 Seagate Technology Llc Method for manufacturing magnetic media with textured CSS landing zone formed by ion implantation, and media obtained thereby
US6692094B1 (en) 2002-07-23 2004-02-17 Eastman Kodak Company Apparatus and method of material deposition using compressed fluids
US6780249B2 (en) * 2002-12-06 2004-08-24 Eastman Kodak Company System for producing patterned deposition from compressed fluid in a partially opened deposition chamber
US6790483B2 (en) * 2002-12-06 2004-09-14 Eastman Kodak Company Method for producing patterned deposition from compressed fluid
US6843556B2 (en) * 2002-12-06 2005-01-18 Eastman Kodak Company System for producing patterned deposition from compressed fluid in a dual controlled deposition chamber
US20040108060A1 (en) * 2002-12-06 2004-06-10 Eastman Kodak Company System for producing patterned deposition from compressed fluids
US7444934B2 (en) * 2005-05-24 2008-11-04 Micron Technology, Inc. Supercritical fluid-assisted direct write for printing integrated circuits
US9005848B2 (en) * 2008-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same
US9005849B2 (en) * 2009-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same
CN102693909A (zh) * 2011-03-23 2012-09-26 中芯国际集成电路制造(上海)有限公司 硅片上的三维薄膜的成型方法
CN106460167B (zh) 2014-03-18 2019-06-14 3D-奥克赛茨公司 化学气相沉积方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3839108A (en) * 1970-07-22 1974-10-01 Us Navy Method of forming a precision pattern of apertures in a plate
US3713922A (en) * 1970-12-28 1973-01-30 Bell Telephone Labor Inc High resolution shadow masks and their preparation
US3737346A (en) * 1971-07-01 1973-06-05 Bell Telephone Labor Inc Semiconductor device fabrication using combination of energy beams for masking and impurity doping
US3718503A (en) * 1971-07-14 1973-02-27 Us Army Method of forming a diffusion mask barrier on a silicon substrate
BE789090A (fr) * 1971-09-22 1973-01-15 Western Electric Co Procede et solution d'attaque de semi-conducteurs

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3601632A1 (de) * 1986-01-21 1987-07-23 Leybold Heraeus Gmbh & Co Kg Verfahren zum herstellen von extraktionsgittern fuer ionenquellen und durch das verfahren hergestellte extraktionsgitter
GB2233983A (en) * 1989-06-07 1991-01-23 Ppg Industries Inc Producing sputtered coating using foraminous mask member
GB2233983B (en) * 1989-06-07 1993-07-21 Ppg Industries Inc Apparatus and method for making sputtered coatings
GB2321256A (en) * 1997-01-20 1998-07-22 Coherent Optics Three-dimensional masking
US5993904A (en) * 1997-01-20 1999-11-30 Coherent, Inc. Three-dimensional masking method for control of coating thickness
US6168832B1 (en) 1997-01-20 2001-01-02 Coherent, Inc. Three-dimensional masking method for control of coating thickness
GB2321256B (en) * 1997-01-20 2001-10-17 Coherent Optics Three-dimensional masking method for control of optical coating thickness

Also Published As

Publication number Publication date
US4013502A (en) 1977-03-22
DE2429026A1 (de) 1975-01-09
FR2233654A1 (cg-RX-API-DMAC7.html) 1975-01-10
GB1475702A (en) 1977-06-01
JPS5037376A (cg-RX-API-DMAC7.html) 1975-04-08

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Legal Events

Date Code Title Description
CSNS Application of which complete specification have been accepted and published, but patent is not sealed