GB1475656A - Method of etching materials containing silicon - Google Patents
Method of etching materials containing siliconInfo
- Publication number
- GB1475656A GB1475656A GB2047575A GB2047575A GB1475656A GB 1475656 A GB1475656 A GB 1475656A GB 2047575 A GB2047575 A GB 2047575A GB 2047575 A GB2047575 A GB 2047575A GB 1475656 A GB1475656 A GB 1475656A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon
- etched
- mask
- layer
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052710 silicon Inorganic materials 0.000 title abstract 6
- 239000010703 silicon Substances 0.000 title abstract 6
- 239000000463 material Substances 0.000 title abstract 4
- 238000005530 etching Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 abstract 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- 239000012943 hotmelt Substances 0.000 abstract 1
- 239000000155 melt Substances 0.000 abstract 1
- 235000011007 phosphoric acid Nutrition 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Surface Treatment Of Glass (AREA)
- Silicon Compounds (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19742425684 DE2425684A1 (de) | 1974-05-28 | 1974-05-28 | Verfahren zum aetzen von silicium enthaltenden materialien |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1475656A true GB1475656A (en) | 1977-06-01 |
Family
ID=5916629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2047575A Expired GB1475656A (en) | 1974-05-28 | 1975-05-15 | Method of etching materials containing silicon |
Country Status (5)
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004051738A2 (en) * | 2002-12-03 | 2004-06-17 | Koninklijke Philips Electronics N.V. | Method for the manufacture of a display |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5339349A (en) * | 1976-09-24 | 1978-04-11 | Asahi Glass Co Ltd | Thermosetting resin molding material |
JPS5370688A (en) * | 1976-12-06 | 1978-06-23 | Toshiba Corp | Production of semoconductor device |
US4283248A (en) * | 1979-02-01 | 1981-08-11 | Nitto Electric Industrial Co., Ltd. | Etching solution for tin-nickel alloy and process for etching the same |
US4465550A (en) * | 1982-06-16 | 1984-08-14 | General Signal Corporation | Method and apparatus for slicing semiconductor ingots |
US4713145A (en) * | 1986-12-19 | 1987-12-15 | Gulton Industries, Inc. | Method of etching etch-resistant materials |
DE4414925A1 (de) * | 1994-04-28 | 1995-11-02 | Wacker Chemitronic | Verfahren zur Behandlung von Halbleitermaterial mit einer säurehaltigen Flüssigkeit |
US6117351A (en) * | 1998-04-06 | 2000-09-12 | Micron Technology, Inc. | Method for etching dielectric films |
US6286685B1 (en) * | 1999-03-15 | 2001-09-11 | Seh America, Inc. | System and method for wafer thickness sorting |
US20040226506A1 (en) * | 2003-05-14 | 2004-11-18 | Lynn David Mark | Coated wafer processing equipment |
JP4746413B2 (ja) * | 2005-11-28 | 2011-08-10 | 大王製紙株式会社 | 体液吸収性物品 |
DE102007054484B3 (de) | 2007-11-15 | 2009-03-12 | Deutsche Cell Gmbh | Strukturier-Verfahren |
JP6433730B2 (ja) * | 2014-09-08 | 2018-12-05 | 東芝メモリ株式会社 | 半導体装置の製造方法及び半導体製造装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3715249A (en) * | 1971-09-03 | 1973-02-06 | Bell Telephone Labor Inc | Etching si3n4 |
GB1423448A (en) * | 1973-07-18 | 1976-02-04 | Plessey Co Ltd | Method of selectively etching silicon nitride |
-
1974
- 1974-05-28 DE DE19742425684 patent/DE2425684A1/de not_active Withdrawn
-
1975
- 1975-04-21 US US05/570,068 patent/US3971683A/en not_active Expired - Lifetime
- 1975-04-24 FR FR7513743A patent/FR2273081B1/fr not_active Expired
- 1975-05-06 JP JP50053326A patent/JPS50153795A/ja active Pending
- 1975-05-15 GB GB2047575A patent/GB1475656A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004051738A2 (en) * | 2002-12-03 | 2004-06-17 | Koninklijke Philips Electronics N.V. | Method for the manufacture of a display |
WO2004051738A3 (en) * | 2002-12-03 | 2004-09-02 | Koninkl Philips Electronics Nv | Method for the manufacture of a display |
Also Published As
Publication number | Publication date |
---|---|
US3971683A (en) | 1976-07-27 |
JPS50153795A (US06265458-20010724-C00018.png) | 1975-12-11 |
FR2273081B1 (US06265458-20010724-C00018.png) | 1977-07-22 |
DE2425684A1 (de) | 1975-12-11 |
FR2273081A1 (US06265458-20010724-C00018.png) | 1975-12-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1475656A (en) | Method of etching materials containing silicon | |
JPS5351970A (en) | Manufacture for semiconductor substrate | |
JPS5244173A (en) | Method of flat etching of silicon substrate | |
GB1445659A (en) | Method of etching silicon oxide to produce a tapered edge thereon | |
GB1285778A (en) | Improvements in and relating to methods of etching | |
GB1190893A (en) | A Method of Manufacturing a Semiconductor Device and a Semiconductor Device Obtained Thereby | |
GB1432949A (en) | Silicon dioxide semiconductor product containing boron trioxide and phosphorus pentoxide dopants | |
JPS53135263A (en) | Production of semiconductor device | |
JPS5688320A (en) | Gas etching method | |
JPS5743428A (en) | Mesa etching method | |
GB1527106A (en) | Method of etching multilayered articles | |
JPS52127085A (en) | Semiconductor laser | |
JPS5243370A (en) | Method of forming depression in semiconductor substrate | |
JPS57124440A (en) | Compound etching method | |
JPS51136289A (en) | Semi-conductor producing | |
JPS643663A (en) | Forming method for fine pattern | |
IT7927554A0 (it) | Procedimento per il ricupero dell'uranio presente nelle soluzioni di acido fosforico. | |
JPS5338982A (en) | Taper etching method | |
JPS5436185A (en) | Etching method of gaas system compound semiconductor crystal | |
JPS5478980A (en) | Anisotropic etching method | |
JPS5321573A (en) | Etching method | |
JPS52123171A (en) | Anisotropic etching method of semiconductor single crystal | |
JPS57100734A (en) | Etching method for semiconductor substrate | |
JPS56111284A (en) | Manufacture of semiconductor laser | |
GB1477512A (en) | Methods of manufacturing semiconductor devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |