GB1467860A - Monocrystalline semiconductor rods - Google Patents
Monocrystalline semiconductor rodsInfo
- Publication number
- GB1467860A GB1467860A GB5538374A GB5538374A GB1467860A GB 1467860 A GB1467860 A GB 1467860A GB 5538374 A GB5538374 A GB 5538374A GB 5538374 A GB5538374 A GB 5538374A GB 1467860 A GB1467860 A GB 1467860A
- Authority
- GB
- United Kingdom
- Prior art keywords
- boat
- rods
- sio
- reaction product
- monocrystalline semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 3
- 239000007795 chemical reaction product Substances 0.000 abstract 3
- 238000001816 cooling Methods 0.000 abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- -1 GaAs Chemical class 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000008710 crystal-8 Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000012071 phase Substances 0.000 abstract 1
- 230000000750 progressive effect Effects 0.000 abstract 1
- 238000005488 sandblasting Methods 0.000 abstract 1
- 238000007711 solidification Methods 0.000 abstract 1
- 230000008023 solidification Effects 0.000 abstract 1
- 238000009736 wetting Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7346938A FR2255949B1 (enrdf_load_stackoverflow) | 1973-12-28 | 1973-12-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1467860A true GB1467860A (en) | 1977-03-23 |
Family
ID=9129935
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB5538374A Expired GB1467860A (en) | 1973-12-28 | 1974-12-23 | Monocrystalline semiconductor rods |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5099681A (enrdf_load_stackoverflow) |
BE (1) | BE823943A (enrdf_load_stackoverflow) |
DE (1) | DE2459591A1 (enrdf_load_stackoverflow) |
FR (1) | FR2255949B1 (enrdf_load_stackoverflow) |
GB (1) | GB1467860A (enrdf_load_stackoverflow) |
IT (1) | IT1028009B (enrdf_load_stackoverflow) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2383728A1 (fr) * | 1977-03-16 | 1978-10-13 | Radiotechnique Compelec | Perfectionnement a un procede de realisation d'un lingot de materiau cristallin |
FR2416729A1 (fr) * | 1978-02-09 | 1979-09-07 | Radiotechnique Compelec | Perfectionnement au procede de fabrication d'un monocristal de compose iii-v'' |
GB2097695B (en) * | 1981-03-24 | 1984-08-22 | Mitsubishi Monsanto Chem | Method for producing a single crystal |
JPS6345198A (ja) * | 1986-04-23 | 1988-02-26 | Sumitomo Electric Ind Ltd | 多元系結晶の製造方法 |
US4853066A (en) * | 1986-10-31 | 1989-08-01 | Furukawa Electric Co., Ltd. | Method for growing compound semiconductor crystal |
JPS6465099A (en) * | 1987-09-07 | 1989-03-10 | Hitachi Cable | Production of gaas single crystal |
-
1973
- 1973-12-28 FR FR7346938A patent/FR2255949B1/fr not_active Expired
-
1974
- 1974-12-17 DE DE19742459591 patent/DE2459591A1/de active Pending
- 1974-12-23 GB GB5538374A patent/GB1467860A/en not_active Expired
- 1974-12-23 IT IT3096974A patent/IT1028009B/it active
- 1974-12-25 JP JP420175A patent/JPS5099681A/ja active Pending
- 1974-12-27 BE BE152008A patent/BE823943A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
IT1028009B (it) | 1979-01-30 |
DE2459591A1 (de) | 1975-07-10 |
BE823943A (nl) | 1975-06-27 |
FR2255949A1 (enrdf_load_stackoverflow) | 1975-07-25 |
JPS5099681A (enrdf_load_stackoverflow) | 1975-08-07 |
FR2255949B1 (enrdf_load_stackoverflow) | 1976-10-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1467860A (en) | Monocrystalline semiconductor rods | |
GB1309347A (en) | Production of doped gallium arsenide | |
GB1473485A (en) | Method for growing crystals of iii-v compound semicon ductors | |
JP2001180918A (ja) | リン化インジウムの直接合成法 | |
US3322501A (en) | Preparation of gallium arsenide with controlled silicon concentrations | |
GB1260924A (en) | Improvements in and relating to methods of manufacturing semiconductor compounds | |
KR850000779A (ko) | 결정질 폴리포스파이드의 액상성장 | |
GB1406597A (en) | Method of producing a high density body of a polycrystalline compound | |
US3671330A (en) | Removal of acceptor impurities from high purity germanium | |
US2937075A (en) | Method of preparing pure indium phosphide | |
US3690847A (en) | Method of producing highly pure,particularly silicon free gallium arsenide | |
JP2887978B2 (ja) | Iii−v族化合物半導体組成物の合成方法 | |
JPS54141388A (en) | Production of compound semiconductor single crystal | |
JPS53139970A (en) | Liquid phase epitaxial growth method of gaas crystal | |
JPS5843326B2 (ja) | 砒化シリコンの製造方法 | |
JPS52116071A (en) | Process for liquid phase epitaxial growth | |
JPS6036397A (ja) | 化合物単結晶育成装置 | |
FR2116915A5 (fr) | Procede de fabrication de composes semiconducteurs sous forme de lingots monocristallins | |
FR2116914A5 (fr) | Procede de fabrication de monocristaux semiconducteurs | |
KR950013003B1 (ko) | 갈륨비소 단결정 성장용 다결정 성장방법 | |
JPS54158164A (en) | Manufacture of multi-component 3-5 group compound semiconductor crystal | |
GB862600A (en) | Improvements in or relating to the preparation of single crystals from the vapour phase | |
FR2079493A5 (en) | Seeded solution growth - of single crystal compound semiconductors | |
JPH0818904B2 (ja) | ▲iii▼−▲v▼族化合物半導体単結晶の製造方法 | |
JPS5850958B2 (ja) | 単結晶の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |