JPS5099681A - - Google Patents

Info

Publication number
JPS5099681A
JPS5099681A JP420175A JP420175A JPS5099681A JP S5099681 A JPS5099681 A JP S5099681A JP 420175 A JP420175 A JP 420175A JP 420175 A JP420175 A JP 420175A JP S5099681 A JPS5099681 A JP S5099681A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP420175A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5099681A publication Critical patent/JPS5099681A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP420175A 1973-12-28 1974-12-25 Pending JPS5099681A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7346938A FR2255949B1 (enrdf_load_stackoverflow) 1973-12-28 1973-12-28

Publications (1)

Publication Number Publication Date
JPS5099681A true JPS5099681A (enrdf_load_stackoverflow) 1975-08-07

Family

ID=9129935

Family Applications (1)

Application Number Title Priority Date Filing Date
JP420175A Pending JPS5099681A (enrdf_load_stackoverflow) 1973-12-28 1974-12-25

Country Status (6)

Country Link
JP (1) JPS5099681A (enrdf_load_stackoverflow)
BE (1) BE823943A (enrdf_load_stackoverflow)
DE (1) DE2459591A1 (enrdf_load_stackoverflow)
FR (1) FR2255949B1 (enrdf_load_stackoverflow)
GB (1) GB1467860A (enrdf_load_stackoverflow)
IT (1) IT1028009B (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2383728A1 (fr) * 1977-03-16 1978-10-13 Radiotechnique Compelec Perfectionnement a un procede de realisation d'un lingot de materiau cristallin
FR2416729A1 (fr) * 1978-02-09 1979-09-07 Radiotechnique Compelec Perfectionnement au procede de fabrication d'un monocristal de compose iii-v''
GB2097695B (en) * 1981-03-24 1984-08-22 Mitsubishi Monsanto Chem Method for producing a single crystal
JPS6345198A (ja) * 1986-04-23 1988-02-26 Sumitomo Electric Ind Ltd 多元系結晶の製造方法
US4853066A (en) * 1986-10-31 1989-08-01 Furukawa Electric Co., Ltd. Method for growing compound semiconductor crystal
JPS6465099A (en) * 1987-09-07 1989-03-10 Hitachi Cable Production of gaas single crystal

Also Published As

Publication number Publication date
IT1028009B (it) 1979-01-30
DE2459591A1 (de) 1975-07-10
GB1467860A (en) 1977-03-23
BE823943A (nl) 1975-06-27
FR2255949A1 (enrdf_load_stackoverflow) 1975-07-25
FR2255949B1 (enrdf_load_stackoverflow) 1976-10-08

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