GB1467860A - Monocrystalline semiconductor rods - Google Patents

Monocrystalline semiconductor rods

Info

Publication number
GB1467860A
GB1467860A GB5538374A GB5538374A GB1467860A GB 1467860 A GB1467860 A GB 1467860A GB 5538374 A GB5538374 A GB 5538374A GB 5538374 A GB5538374 A GB 5538374A GB 1467860 A GB1467860 A GB 1467860A
Authority
GB
United Kingdom
Prior art keywords
boat
rods
sio
reaction product
monocrystalline semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5538374A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1467860A publication Critical patent/GB1467860A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1467860 Monocrystalline semiconductor rods PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 23 Dec 1974 [28 Dec 1973] 55383/74 Heading B1S In the manufacture of rods of monocrystalline semiconductor compounds e.g. GaAs, by reacting a component thereof in the vapour phase with component thereof in the liquid phase to form a molten reaction product in a boat of SiO 2 , containing a monocrystalline seed crystal, followed by cooling, the reaction product is firstly solidified and then re-melted prior to the cooling step. GaAs rods may be prepared by heating Ga 7 in an SiO 2 boat 6 to a temperature of 1260‹C and As 4 to a temperature of 610‹C in a sealed SiO 2 tube 1, the inner surface of which has been roughened by sandblasting and/or etching with HF. Following wetting of the seed crystal 8 by the molten reaction product the boat is cooled to 1230‹C over a period of 1 hr. Subsequently the boat is re-heated to 1260‹C in 1 hr and then allowed to cool to 1200‹C in 10 hrs, progressive cooling being used so that the solidification starts at the seed-end.
GB5538374A 1973-12-28 1974-12-23 Monocrystalline semiconductor rods Expired GB1467860A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7346938A FR2255949B1 (en) 1973-12-28 1973-12-28

Publications (1)

Publication Number Publication Date
GB1467860A true GB1467860A (en) 1977-03-23

Family

ID=9129935

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5538374A Expired GB1467860A (en) 1973-12-28 1974-12-23 Monocrystalline semiconductor rods

Country Status (6)

Country Link
JP (1) JPS5099681A (en)
BE (1) BE823943A (en)
DE (1) DE2459591A1 (en)
FR (1) FR2255949B1 (en)
GB (1) GB1467860A (en)
IT (1) IT1028009B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2383728A1 (en) * 1977-03-16 1978-10-13 Radiotechnique Compelec IMPROVEMENT OF A PROCESS FOR MAKING AN INGOT OF CRYSTALLINE MATERIAL
FR2416729A1 (en) * 1978-02-09 1979-09-07 Radiotechnique Compelec IMPROVEMENT OF THE MANUFACTURING PROCESS OF A III-V COMPOUND SINGLE CRYSTAL ''
GB2097695B (en) * 1981-03-24 1984-08-22 Mitsubishi Monsanto Chem Method for producing a single crystal
JPS6345198A (en) * 1986-04-23 1988-02-26 Sumitomo Electric Ind Ltd Production of crystal of multiple system
US4853066A (en) * 1986-10-31 1989-08-01 Furukawa Electric Co., Ltd. Method for growing compound semiconductor crystal
JPS6465099A (en) * 1987-09-07 1989-03-10 Hitachi Cable Production of gaas single crystal

Also Published As

Publication number Publication date
FR2255949B1 (en) 1976-10-08
FR2255949A1 (en) 1975-07-25
IT1028009B (en) 1979-01-30
JPS5099681A (en) 1975-08-07
DE2459591A1 (en) 1975-07-10
BE823943A (en) 1975-06-27

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee