GB1463180A - Crystal growth - Google Patents

Crystal growth

Info

Publication number
GB1463180A
GB1463180A GB5541674A GB5541674A GB1463180A GB 1463180 A GB1463180 A GB 1463180A GB 5541674 A GB5541674 A GB 5541674A GB 5541674 A GB5541674 A GB 5541674A GB 1463180 A GB1463180 A GB 1463180A
Authority
GB
United Kingdom
Prior art keywords
crucible
temp
melt
whilst
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5541674A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CRYSTAL SYSTEMS Inc
Crystal Systems Corp
Original Assignee
CRYSTAL SYSTEMS Inc
Crystal Systems Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CRYSTAL SYSTEMS Inc, Crystal Systems Corp filed Critical CRYSTAL SYSTEMS Inc
Publication of GB1463180A publication Critical patent/GB1463180A/en
Expired legal-status Critical Current

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D7/00—Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall
    • F28D7/10—Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall the conduits being arranged one within the other, e.g. concentrically
    • F28D7/12—Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall the conduits being arranged one within the other, e.g. concentrically the surrounding tube being closed at one end, e.g. return type
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D21/00—Heat-exchange apparatus not covered by any of the groups F28D1/00 - F28D20/00
    • F28D2021/0019—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for
    • F28D2021/0056—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for for ovens or furnaces
    • F28D2021/0057—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for for ovens or furnaces for melting materials

Abstract

1463180 Growing single crystals from a melt CRYSTAL SYSTEMS INC 23 Dec 1974 [28 Dec 1973] 55416/74 Headings BIG and B1S Single crystals are grown from a melt in a crucible by cooling a bottom portion of the crucible below the m.p. of the material whilst maintaining the side portions of the crucible above the m.p. e.g. 50 C deg, until all of the material has solidified. As shown the melt, optionally with a seed crystal, is contained within crucible 48. The sides 56 of the crucible are heated by resistance heater 26 whilst the bottom 49 is cooled by gaseous He flowing through tubular heat exchanger 32, the upper flat end 38 of which is in contact with the bottom 49. The temp. of the heater 26 and the sides 56 are monitored by pyrometers 71, 73 whilst the melt is directly observed through lens assembly 64. The crucible and heater are surrounded by insulation 24. The furnace 10 operates at low pressure. In operation, the temp. of the crucible wall 56 is initially maintained at 50 C deg or more above the m.p. whilst He, at a flow rate of 40 c.f.h., is passed through the exchanger 32, [Fig. 3a (not shown)]. The rate of He flow is then increased at 10-15 c.f.h./hr to initiate crystal growth, the heat exchanger temp. being reduced at 50 C deg/hr or less i[Fig. 3b (not shown)]. Subsequently the temp. of the wall is reduced at 15 C deg/hr or less to continue crystallization to that of Fig. 3c (not shown). After complete solidification, the crystal is annealed at 50 C deg below the m.p., and then cooled at 50 C deg/hr to room temp.
GB5541674A 1973-12-28 1974-12-23 Crystal growth Expired GB1463180A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US429142A US3898051A (en) 1973-12-28 1973-12-28 Crystal growing

Publications (1)

Publication Number Publication Date
GB1463180A true GB1463180A (en) 1977-02-02

Family

ID=23701973

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5541674A Expired GB1463180A (en) 1973-12-28 1974-12-23 Crystal growth

Country Status (7)

Country Link
US (1) US3898051A (en)
JP (1) JPS5854115B2 (en)
CA (1) CA1038268A (en)
CH (1) CH595881A5 (en)
DE (1) DE2461553C2 (en)
FR (1) FR2255950B1 (en)
GB (1) GB1463180A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114737253A (en) * 2022-06-10 2022-07-12 太原彩源新材料科技有限公司 Single crystal furnace thermal field structure and method for growing large-size sapphire single crystal plate

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114737253A (en) * 2022-06-10 2022-07-12 太原彩源新材料科技有限公司 Single crystal furnace thermal field structure and method for growing large-size sapphire single crystal plate
CN114737253B (en) * 2022-06-10 2022-11-04 太原彩源新材料科技有限公司 Single crystal furnace thermal field structure and method for growing large-size sapphire single crystal plate

Also Published As

Publication number Publication date
DE2461553C2 (en) 1986-04-24
FR2255950B1 (en) 1980-12-26
JPS5854115B2 (en) 1983-12-02
CA1038268A (en) 1978-09-12
CH595881A5 (en) 1978-02-28
JPS5097587A (en) 1975-08-02
FR2255950A1 (en) 1975-07-25
US3898051A (en) 1975-08-05
DE2461553A1 (en) 1975-07-10

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee