FR2255950B1 - - Google Patents

Info

Publication number
FR2255950B1
FR2255950B1 FR7429576A FR7429576A FR2255950B1 FR 2255950 B1 FR2255950 B1 FR 2255950B1 FR 7429576 A FR7429576 A FR 7429576A FR 7429576 A FR7429576 A FR 7429576A FR 2255950 B1 FR2255950 B1 FR 2255950B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7429576A
Other versions
FR2255950A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CRYSTAL SYSTEMS Inc
Crystal Systems Inc USA
Original Assignee
CRYSTAL SYSTEMS Inc
Crystal Systems Inc USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CRYSTAL SYSTEMS Inc, Crystal Systems Inc USA filed Critical CRYSTAL SYSTEMS Inc
Publication of FR2255950A1 publication Critical patent/FR2255950A1/fr
Application granted granted Critical
Publication of FR2255950B1 publication Critical patent/FR2255950B1/fr
Expired legal-status Critical Current

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D7/00—Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall
    • F28D7/10—Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall the conduits being arranged one within the other, e.g. concentrically
    • F28D7/12—Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall the conduits being arranged one within the other, e.g. concentrically the surrounding tube being closed at one end, e.g. return type
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D21/00—Heat-exchange apparatus not covered by any of the groups F28D1/00 - F28D20/00
    • F28D2021/0019—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for
    • F28D2021/0056—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for for ovens or furnaces
    • F28D2021/0057—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for for ovens or furnaces for melting materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
FR7429576A 1973-12-28 1974-08-29 Expired FR2255950B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US429142A US3898051A (en) 1973-12-28 1973-12-28 Crystal growing

Publications (2)

Publication Number Publication Date
FR2255950A1 FR2255950A1 (fr) 1975-07-25
FR2255950B1 true FR2255950B1 (fr) 1980-12-26

Family

ID=23701973

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7429576A Expired FR2255950B1 (fr) 1973-12-28 1974-08-29

Country Status (7)

Country Link
US (1) US3898051A (fr)
JP (1) JPS5854115B2 (fr)
CA (1) CA1038268A (fr)
CH (1) CH595881A5 (fr)
DE (1) DE2461553C2 (fr)
FR (1) FR2255950B1 (fr)
GB (1) GB1463180A (fr)

Families Citing this family (80)

* Cited by examiner, † Cited by third party
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US4096025A (en) * 1974-02-21 1978-06-20 The United States Of America As Represented By The Secretary Of The Army Method of orienting seed crystals in a melt, and product obtained thereby
US4049384A (en) * 1975-04-14 1977-09-20 Arthur D. Little, Inc. Cold crucible system
US4186046A (en) * 1976-09-29 1980-01-29 The United States Of America As Represented By The Secretary Of The Army Growing doped single crystal ceramic materials
US4218418A (en) * 1978-06-22 1980-08-19 Crystal Systems, Inc. Processes of casting an ingot and making a silica container
US4251206A (en) * 1979-05-14 1981-02-17 Rca Corporation Apparatus for and method of supporting a crucible for EFG growth of sapphire
US4264406A (en) * 1979-06-11 1981-04-28 The United States Of America As Represented By The Secretary Of The Army Method for growing crystals
FR2512846A1 (fr) * 1981-09-16 1983-03-18 Labo Electronique Physique Procede pour la croissance cristalline de materiau, et cristaux ainsi obtenus
JPS6041033B2 (ja) * 1982-06-24 1985-09-13 財団法人 半導体研究振興会 結晶成長装置
US4540550A (en) * 1982-10-29 1985-09-10 Westinghouse Electric Corp. Apparatus for growing crystals
DE3323896A1 (de) * 1983-07-02 1985-01-17 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum gerichteten erstarren von schmelzen
US4963499A (en) * 1983-07-25 1990-10-16 American Cyanamid Company Method for the calorimetry of chemical processes
US4892707A (en) * 1983-07-25 1990-01-09 American Cyanamid Company Apparatus for the calorimetry of chemical processes
FR2553232B1 (fr) * 1983-10-05 1985-12-27 Comp Generale Electricite Procede et dispositif pour elaborer un lingot d'un materiau semi-conducteur polycristallin
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DE3644746A1 (de) * 1986-12-30 1988-07-14 Hagen Hans Dr Ing Verfahren und vorrichtung zum zuechten von kristallen
FR2614404B1 (fr) * 1987-04-23 1989-06-09 Snecma Four de coulee de pieces a structure orientee, a ecran thermique deplacable
US4840699A (en) * 1987-06-12 1989-06-20 Ghemini Technologies Gallium arsenide crystal growth
US5116456A (en) * 1988-04-18 1992-05-26 Solon Technologies, Inc. Apparatus and method for growth of large single crystals in plate/slab form
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US4946544A (en) * 1989-02-27 1990-08-07 At&T Bell Laboratories Crystal growth method
US5047113A (en) * 1989-08-23 1991-09-10 Aleksandar Ostrogorsky Method for directional solidification of single crystals
US5064497A (en) * 1990-03-09 1991-11-12 At&T Bell Laboratories Crystal growth method and apparatus
DE69230962T2 (de) * 1991-08-22 2000-10-05 Raytheon Co Kristallzüchtungsverfahren zur Herstellung von grossflächigen GaAs und damit hergestellte Infrarot-Fenster/Kuppel
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US5830268A (en) * 1995-06-07 1998-11-03 Thermometrics, Inc. Methods of growing nickel-manganese oxide single crystals
US6099164A (en) * 1995-06-07 2000-08-08 Thermometrics, Inc. Sensors incorporating nickel-manganese oxide single crystals
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JP3242292B2 (ja) * 1995-06-15 2001-12-25 シャープ株式会社 多結晶半導体の製造方法および製造装置
JP3388664B2 (ja) * 1995-12-28 2003-03-24 シャープ株式会社 多結晶半導体の製造方法および製造装置
JP3520957B2 (ja) * 1997-06-23 2004-04-19 シャープ株式会社 多結晶半導体インゴットの製造方法および装置
JP3523986B2 (ja) * 1997-07-02 2004-04-26 シャープ株式会社 多結晶半導体の製造方法および製造装置
DE29715846U1 (de) * 1997-09-04 1997-12-11 ALD Vacuum Technologies GmbH, 63526 Erlensee Vorrichtung zum gerichteten Erstarren von Schmelzen
US6839362B2 (en) * 2001-05-22 2005-01-04 Saint-Gobain Ceramics & Plastics, Inc. Cobalt-doped saturable absorber Q-switches and laser systems
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US8021483B2 (en) 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
JP4658453B2 (ja) * 2002-11-14 2011-03-23 ヘムロック・セミコンダクター・コーポレーション 流動性チップ、それを製造する方法及び使用する方法並びにその方法の実施に用いる装置
JP4151474B2 (ja) * 2003-05-13 2008-09-17 信越半導体株式会社 単結晶の製造方法及び単結晶
US7045223B2 (en) * 2003-09-23 2006-05-16 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US7326477B2 (en) * 2003-09-23 2008-02-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel boules, wafers, and methods for fabricating same
US20050061230A1 (en) * 2003-09-23 2005-03-24 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
CN1914119B (zh) * 2004-01-29 2010-09-29 京瓷株式会社 铸模及其形成方法，和采用此铸模的多晶硅基板的制造方法
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US8992683B2 (en) * 2004-11-16 2015-03-31 Nippon Telegraph And Telephone Corporation Apparatus for producing crystals
US7919815B1 (en) 2005-02-24 2011-04-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel wafers and methods of preparation
US7344596B2 (en) * 2005-08-25 2008-03-18 Crystal Systems, Inc. System and method for crystal growing
US7572334B2 (en) * 2006-01-03 2009-08-11 Applied Materials, Inc. Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application
AU2007205947B2 (en) 2006-01-20 2012-03-08 Amg Idealcast Solar Corporation Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics
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CN103221340B (zh) * 2010-11-29 2016-06-15 株式会社爱发科 硅精炼装置以及硅精炼方法
US9709699B2 (en) 2012-02-03 2017-07-18 Raytheon Company Nano-nano-composite optical ceramic lenses
US9012823B2 (en) 2012-07-31 2015-04-21 Raytheon Company Vehicle having a nanocomposite optical ceramic dome
JP6384921B2 (ja) * 2013-03-25 2018-09-05 国立大学法人九州大学 シリコン単結晶生成装置、シリコン単結晶生成方法
CN103205799A (zh) * 2013-04-23 2013-07-17 广东赛翡蓝宝石科技有限公司 一种生长c向白宝石单晶体的方法
WO2015047819A1 (fr) * 2013-09-30 2015-04-02 Gt Crystal Systems, Llc Procédé et appareil pour le traitement de saphir
US10633759B2 (en) * 2013-09-30 2020-04-28 Gtat Corporation Technique for controlling temperature uniformity in crystal growth apparatus
US9845548B2 (en) * 2013-09-30 2017-12-19 Gtat Corporation Advanced crucible support and thermal distribution management
CN104195640A (zh) * 2014-08-28 2014-12-10 杭州铸泰科技有限公司 一种用于蓝宝石单晶生长的热场系统
CN104250852B (zh) * 2014-09-17 2016-09-14 哈尔滨化兴软控科技有限公司 蓝宝石晶体生长装置及生长方法
JP6827461B2 (ja) * 2016-02-26 2021-02-10 株式会社アライドマテリアル モリブデン坩堝
CN206562482U (zh) * 2017-01-13 2017-10-17 许昌天戈硅业科技有限公司 一种蓝宝石长晶炉的分级闭环控制冷却设备
DE102020120715A1 (de) 2020-08-05 2022-02-10 Forschungsverbund Berlin E.V. Verfahren und Vorrichtung zum Züchten eines Seltenerd-Sesquioxid-Kristalls
CN114737253B (zh) * 2022-06-10 2022-11-04 太原彩源新材料科技有限公司 生长大尺寸蓝宝石单晶板材的单晶炉热场结构及方法

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US3335084A (en) * 1964-03-16 1967-08-08 Gen Electric Method for producing homogeneous crystals of mixed semiconductive materials
BE684801A (fr) * 1965-08-05 1967-01-03
US3464812A (en) * 1966-03-29 1969-09-02 Massachusetts Inst Technology Process for making solids and products thereof
DE1936443C3 (de) * 1969-07-17 1975-03-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Aufwachsen homogen dotierter, planparalleler epitaktischer ScNchten aus halbleitenden Verbindungen durch Schmelzepitaxie
US3653432A (en) * 1970-09-01 1972-04-04 Us Army Apparatus and method for unidirectionally solidifying high temperature material

Also Published As

Publication number Publication date
DE2461553C2 (de) 1986-04-24
FR2255950A1 (fr) 1975-07-25
US3898051A (en) 1975-08-05
CA1038268A (fr) 1978-09-12
DE2461553A1 (de) 1975-07-10
CH595881A5 (fr) 1978-02-28
JPS5097587A (fr) 1975-08-02
GB1463180A (en) 1977-02-02
JPS5854115B2 (ja) 1983-12-02

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