JPH03137085A - Production of ii-vi compound semiconductor crystal - Google Patents
Production of ii-vi compound semiconductor crystalInfo
- Publication number
- JPH03137085A JPH03137085A JP27351189A JP27351189A JPH03137085A JP H03137085 A JPH03137085 A JP H03137085A JP 27351189 A JP27351189 A JP 27351189A JP 27351189 A JP27351189 A JP 27351189A JP H03137085 A JPH03137085 A JP H03137085A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- vapor pressure
- cdte
- crystal
- boat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 58
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 150000001875 compounds Chemical class 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 229910004613 CdTe Inorganic materials 0.000 claims abstract description 22
- 238000002791 soaking Methods 0.000 claims abstract description 22
- 239000002994 raw material Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 20
- 239000010453 quartz Substances 0.000 abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 11
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 239000007788 liquid Substances 0.000 description 8
- 239000000155 melt Substances 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 239000007791 liquid phase Substances 0.000 description 5
- 230000002265 prevention Effects 0.000 description 5
- 230000008646 thermal stress Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 239000007790 solid phase Substances 0.000 description 4
- 229910004611 CdZnTe Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- 229910007709 ZnTe Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010587 phase diagram Methods 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は、化合物半導体単結晶の製造技術、さらには熱
伝導率の低いＩＩ−ＶＩ族化合物半導体単結晶特にＣ：
ｄＴｅ系単結晶の育成に利用して効果的な技術に関する
。DETAILED DESCRIPTION OF THE INVENTION [Industrial Fields of Application] The present invention relates to a technology for manufacturing compound semiconductor single crystals, and more particularly to II-VI group compound semiconductor single crystals having low thermal conductivity, particularly C:
This invention relates to effective techniques for growing dTe-based single crystals.
［従来の技術］
従来、ＣｄＴｅ、ＣｄＺｎＴｅ等のＩＩ−ＶＩ族化合物
半導体単結晶は、化学量論的比率のＣｄ、ＴｅおよびＣ
ｄ、Ｚｎ、ＴｅあるいはＣｄＴｅ多結晶やＣｄＺｎＴｅ
多結晶を原料として、ブリッジマン法やグラジエントフ
リージング法、トラベリングヒータ法等で融液を冷却さ
せることで育成していた。[Prior Art] Conventionally, II-VI group compound semiconductor single crystals such as CdTe and CdZnTe contain stoichiometric ratios of Cd, Te and C.
d, Zn, Te or CdTe polycrystal or CdZnTe
Using polycrystals as raw materials, they were grown by cooling the melt using the Bridgman method, gradient freezing method, traveling heater method, etc.
一方、ＣｄＴｅに関しては、９７０’Ｃで融解したＣｄ
過剰融液を、Ｃｄ蒸気圧を印加しながら１０２５℃に昇
温することによってＣｄＴｅ単結晶を育成する方法がＬ
ｏｒｅｎｚによって提案されている（Ｊｏｕｒｎａｌ
ｏｆ ＡｐｐｌｉｅｄＰｈｙｓｉｃｓ Ｖｏｌ、
３３．Ｎｏ、１１゜１９６２年１１月、ｐ３３０４）。On the other hand, regarding CdTe, Cd melted at 970'C
L
proposed by orenz (Journal
of Applied Physics Vol.
33. No. 11゜November 1962, p3304).
［発明が解決しようとする課題］
原料融液を冷却して単結晶を育成する従来の一般的なボ
ート法にあっては、ＩＩ−ＶＩ族化合物半導体の熱伝導
率が小さいので、凝固潜熱が結晶内を伝わって逃げにく
くなる。そのため、成長容器を伝わって逃げる熱の割合
が多くなってしまう。その結果、固液界面形状が第５図
に示すごとく融液側に凹状となるため、成長容器に接し
た部分で核ができて多結晶化し易い。また、トラベリン
グヒータ法以外の結晶成長方法では、融点直下の高温で
結晶を成長するため結晶中に熱応力が生じ易く、リニエ
ージやセル構造の転位の発生を助長するという欠点があ
った。[Problem to be solved by the invention] In the conventional general boat method in which a raw material melt is cooled to grow a single crystal, the latent heat of solidification is It travels through the crystal and becomes difficult to escape. Therefore, the proportion of heat that escapes through the growth container increases. As a result, the solid-liquid interface shape becomes concave toward the melt side as shown in FIG. 5, so that nuclei are formed in the portion in contact with the growth container and polycrystals are likely to occur. In addition, crystal growth methods other than the traveling heater method have the disadvantage that because the crystal is grown at a high temperature just below the melting point, thermal stress is likely to occur in the crystal, promoting lineage and dislocation of the cell structure.
一方、Ｌｏｒｅｎｚの方法にあっては、結晶化温度が９
７０℃〜１０２５℃の間にあって融点（１０９２℃）よ
りも１００℃近く低くさせることはできているが、品質
については報告されていない。On the other hand, in Lorenz's method, the crystallization temperature is 9
Although it has been possible to lower the melting point (1092°C) by nearly 100°C between 70°C and 1025°C, the quality has not been reported.
本発明は、上記のような問題点に着目してなされたもの
で、その目的とするところは、ＣｄＴｅのような熱伝導
率の低い化合物半導体単結晶を育成する場合に、単結晶
化率を向上させ、かつ転位の少ない高品質の結晶を育成
可能な結晶成長技術を提供することにある。The present invention was made in view of the above-mentioned problems, and its purpose is to improve the single crystallization rate when growing compound semiconductor single crystals with low thermal conductivity such as CdTe. It is an object of the present invention to provide a crystal growth technique capable of growing high-quality crystals with improved performance and fewer dislocations.
［課題を解決するための手段］
本発明者は、Ｃｄ過剰融液をＣｄ蒸気圧を印加しながら
昇温することによってＣｄＴｅ単結晶を育成するＬｏｒ
ｅｎｚの方法が可能ならば、Ｔｅ過剰融液をＴｅ蒸気圧
を印加しながら昇温することでＣｄＴｅ単結晶を育成で
きるのではないかと考え、検討した。[Means for Solving the Problem] The present inventor has developed a Lor method for growing a CdTe single crystal by heating an excess Cd melt while applying a Cd vapor pressure.
If enz's method is possible, we considered that it would be possible to grow a CdTe single crystal by heating a Te-excess melt while applying Te vapor pressure.
その結果、Ｔｅ蒸気圧制御の場合、ＣｄＴｅの相図上に
平衡するＴｅ蒸気圧Ｐ’ｒｅを記入すると、第３図のよ
うになり、０．０８＜Ｐｒｅ＜０．２４５ａｔｍの範囲
では同−Ｔｅ蒸気圧で液相線と交わる点が二点ずつ存在
する。この二点のうち低温側の点をＴＱ、、高温側の点
をＴｈとすると、低温側（ＴＱ）では、この温度以下で
液相である原料融液をＴｅ蒸気圧を制御しながら温度Ｔ
Ｑから高温側の点Ｔｈに向かって加熱昇温させることに
より、結晶を成長させ得ることができる。As a result, in the case of Te vapor pressure control, if the equilibrium Te vapor pressure P're is written on the phase diagram of CdTe, it becomes as shown in Figure 3, and in the range of 0.08<Pre<0.245 atm, - There are two points each where the Te vapor pressure intersects the liquidus line. If the point on the low temperature side of these two points is TQ, and the point on the high temperature side is Th, then on the low temperature side (TQ), the raw material melt, which is in the liquid phase below this temperature, is heated to a temperature of T while controlling the Te vapor pressure.
By heating and increasing the temperature from Q toward point Th on the high temperature side, crystals can be grown.
しかも、Ｔｅ過剰側で結晶を育成すると、Ｃｄ過剰にお
ける９７０℃から１０２５℃への昇温に比べて低い温度
で結晶化できるので不純物の混入量を減らし、かつ熱応
力を低減できるとともに、Ｃｄ蒸気圧（５、９ａｔｍ）
に比べ低いＴｅ蒸気圧（０，２ａｔｍ）で結晶を育成で
きるとの結論に達した。Moreover, when crystals are grown in an excess of Te, they can be crystallized at a lower temperature compared to raising the temperature from 970°C to 1025°C in an excess of Cd, reducing the amount of impurities mixed in and reducing thermal stress. Pressure (5, 9 atm)
It was concluded that crystals can be grown at a Te vapor pressure (0.2 atm) that is lower than that of Te vapor pressure (0.2 atm).
この発明は、上記考察に基づいてなされたもので、化学
量論組成よりＴｅ過剰とされた原料融液を、Ｔｅ蒸気圧
を制御しながら８００℃〜９００℃から９２０”Ｃ〜９
７０℃へｐＡさせることでＣｄＴｅ系結晶を育成する方
法を提案するものである。This invention was made based on the above consideration, and the raw material melt containing excessive Te compared to the stoichiometric composition was heated from 800 to 900 °C to 920"C to 92"C while controlling the Te vapor pressure.
This paper proposes a method of growing CdTe-based crystals by raising the pA to 70°C.
なお、本発明はＣｄＴｅのみならずＣｄＺｎＴｅその他
ＣｄＴｅ系結晶の育成に適用できる。その場合、最適の
結晶化温度範囲およびＴｅ蒸気圧は結晶の種類に応じて
変化する。Note that the present invention can be applied to the growth of not only CdTe but also CdZnTe and other CdTe-based crystals. In that case, the optimal crystallization temperature range and Te vapor pressure vary depending on the type of crystal.
［作用］
上記手段によれば、従来方法に比べ低い成長温度で結晶
を育成でき、これによって不純物の混入量を減らし熱応
力を低減できるた、ノ、リニエージやセル構造の転位の
発生を抑えることができるとともに、昇温により結晶化
するため冷却により結晶化する従来の一般的なボート法
に対し、熱の伝達方向（液相から固相）が逆（固相がら
液相）になるので、固液界面形状が融液側に凸形になり
。[Function] According to the above means, crystals can be grown at a lower growth temperature than conventional methods, thereby reducing the amount of impurities mixed in and reducing thermal stress, and also suppressing the generation of lineage and dislocations in the cell structure. In addition, the direction of heat transfer (from liquid phase to solid phase) is reversed (from solid phase to liquid phase), compared to the conventional general boat method in which crystallization occurs when the temperature is raised and crystallizes when cooled. The solid-liquid interface shape becomes convex toward the melt side.
多結晶化を抑えることが可能となる。It becomes possible to suppress polycrystalization.
［実施例コ
横型ボート法の−っである三温度帯水平ブリッジマン法
を適用した結晶成長装置によりＣｄ Ｔｅ結晶の育成を
行なった。[Example] A CdTe crystal was grown using a crystal growth apparatus to which a three-temperature horizontal Bridgman method, which is an alternative to the horizontal boat method, was applied.
第１図に使用した結晶成長装置の構成例を示す。FIG. 1 shows an example of the configuration of the crystal growth apparatus used.
この装置は原料を充填したボート２と蒸気圧制御用の元
素３および対流防止板４を真空封入した石英反応管５が
ヒータ１内に挿入され、ヒータ１によって炉内に軸方向
に沿って３つの均熱帯Ｔ Ｉ ｔＴ、、Ｔ、（Ｔ、’＞
Ｔ、＞Ｔ、）が形成されるように構成されている。石英
反応管５は当初原料を装填したボート２が中間温度均熱
帯Ｔ、に位置し、蒸気圧制御用の元素３が低温度均熱帯
Ｔ１に位置するように配置される（第１図）。この状態
で、先ずボート２内の原料を溶融させてがら、ボート２
が中間温度均熱帯Ｔ、から高温度均熱帯Ｔ１に向がうよ
うに移動させることにより、ボート２内の原料の固液界
面を相対的に移動させ、左端から右端に向かって結晶を
成長させるものである。また、結晶成長中低温度均熱帯
Ｔ、は反応管５内が元素３の蒸気圧によって所望の圧力
となるように温度が制御される。ＣｄＴｅの成長に伴っ
て融液からＴｅが吐き出され、過剰のＴｅが低温部へ移
動する。In this device, a boat 2 filled with raw materials, a quartz reaction tube 5 vacuum-sealed with an element 3 for vapor pressure control, and a convection prevention plate 4 are inserted into a heater 1, and the heater 1 moves three quartz tubes along the axial direction into the furnace. Soaking zone T I tT,,T,(T,'>
T,>T,) is formed. The quartz reaction tube 5 is initially arranged so that the boat 2 loaded with raw materials is located in the intermediate temperature soaking zone T, and the element 3 for vapor pressure control is located in the low temperature soaking zone T1 (FIG. 1). In this state, first, while melting the raw materials in the boat 2,
By moving the material from the medium-temperature soaking zone T toward the high-temperature soaking zone T1, the solid-liquid interface of the raw material in the boat 2 is relatively moved, and crystals grow from the left end to the right end. It is something. Further, the temperature of the low-temperature soaking zone T during crystal growth is controlled so that the inside of the reaction tube 5 has a desired pressure depending on the vapor pressure of the element 3. As CdTe grows, Te is expelled from the melt, and excess Te moves to the low temperature section.
第２図には結晶育成終了時のボートの位置を示す。Figure 2 shows the position of the boat at the end of crystal growth.
（具体例１）
Ｃｄ ： Ｔｅ＝３０ ： ７０ａｔ％で予め合成した
Ｔｅ過剰ＣｄＴｅ多結晶１７００ｇを、ｐＢＮ製ボート
２に充填し、蒸気圧制御用のＴｅ塊６５０ｇ及び対流防
止板４とともに、石英反応管５内に真空封入した。ヒー
タ１により高温度均熱帯Ｔ、を９５０’Ｃ１中間温度均
熱帯Ｔ３を８８０℃、低温度均熱帯Ｔ、を８２５℃に制
御した温度分布を形成し、中間温度均熱帯Ｔ、にボート
２が位置し、蒸気圧制御用Ｔｅが低温度均熱帯Ｔ、に位
置するように石英反応ｖ５を設置し、Ｔｅ蒸気圧０．２
ａｔｍの条件のもとて原料を融解した。ヒータ１を０．
１ｍｍ／ｈｒで移動させ、ボート部の温度を８８０℃か
ら９５０℃に昇温させ、ＣｄＴｅ結晶を育成した。得ら
れた結晶は出発原料に対して約６割の重量で、平均の大
きさが３０×３０×４０ｍｍの単結晶粒が４個得られ、
転位密度は（１〜３）×１０’ｃｍ−″であった。(Specific Example 1) 1700 g of Te-excess CdTe polycrystals synthesized in advance at Cd:Te=30:70 at% were filled into a pBN boat 2, and together with 650 g of Te lumps for vapor pressure control and a convection prevention plate 4, a quartz reaction was carried out. The tube 5 was sealed in vacuum. Heater 1 forms a temperature distribution in which the high temperature soaking zone T is controlled to 950'C, the intermediate temperature soaking zone T3 is controlled to 880℃, and the low temperature soaking zone T is controlled to 825℃. The quartz reaction v5 is installed so that the Te for vapor pressure control is located in the low temperature soaking zone T, and the Te vapor pressure is 0.2.
The raw material was melted under ATM conditions. Set heater 1 to 0.
The boat was moved at a rate of 1 mm/hr and the temperature of the boat portion was raised from 880°C to 950°C to grow CdTe crystals. The obtained crystals had a weight of about 60% of the starting material, and four single crystal grains with an average size of 30 x 30 x 40 mm were obtained.
The dislocation density was (1-3) x 10'cm-''.
（具体例２）
Ｃｄ ： Ｔｅ＝３０ ： ７０ａｔ％で予め合成した
Ｔｅ過剰ＣｄＴｅ多結晶１７００ｇと、Ｚ ｎ Ｔ ｅ
３０ｇをｐＢＮ製ボート１に充填し、蒸気圧制御用Ｔ
ｅ６５０ｇ及び対流防止板４とともに石英反応管５内に
真空封入した。ヒータｌで高温度均熱帯９５０℃、中間
温度均熱帯８７０’Ｃ１低温度均熱帯８２５℃の温度分
布を形成し、中間温度均熱帯にボート２が位置するよう
に石英反応管５を設置して、Ｔｅ蒸気圧０．２ａｔｍの
条件のもとで、ヒータ１を０．１ｍｍ／ｈｒで移動させ
、ボート部の温度を８７０℃から９５０℃に昇温させて
Ｃｄ ＺｎＴｅ結晶を育成した。得られた結晶は、出発
原料に対して約６割の重量で平均の大きさが２５×３５
×４０（財）の単結晶粒が５個集まった結晶体が得られ
た。Ｚｎ濃度から固液界面形状を調べた結果、第４図に
示すように融液側に対して凸型を有し、転位密度は（１
〜２）×１０４ＣＩＴｌ−であった。(Specific Example 2) 1700 g of Te-excess CdTe polycrystal synthesized in advance with Cd:Te=30:70at% and ZnTe
30g was filled into pBN boat 1, and T for steam pressure control was filled.
It was vacuum sealed in a quartz reaction tube 5 together with 650 g of e and a convection prevention plate 4. A temperature distribution of 950°C in a high-temperature soaking zone, 870'C in a middle-temperature soaking zone, and 825°C in a low-temperature soaking zone is formed using the heater L, and the quartz reaction tube 5 is installed so that the boat 2 is located in the middle-temperature soaking zone. , Te vapor pressure of 0.2 atm, the heater 1 was moved at a rate of 0.1 mm/hr, and the temperature of the boat portion was raised from 870° C. to 950° C. to grow a Cd ZnTe crystal. The obtained crystals weigh approximately 60% of the starting material and have an average size of 25 x 35
A crystal body consisting of five single crystal grains of ×40 (Foundation) was obtained. As a result of examining the shape of the solid-liquid interface from the Zn concentration, it was found that it had a convex shape toward the melt side, as shown in Figure 4, and the dislocation density was (1
~2)×104CITl−.
（比較例）
上記実施例と同一の結晶成長装置を用い、化学量論組成
で合成したＣｄＴｅ多結晶２４００ｇ及びＺｎＴｅ６０
ｇをｐＢＮ製ボートに充填し、蒸気圧制御用Ｃｄ７０ｇ
及び対流防止板とともに、石英反応管内に真空封入した
。高温度均熱帯１１０５℃、中間温度均熱帯１０５０℃
、低温度均熱帯８２０℃の温度分布を形成し、高温度均
熱帯にボートが位置するように石英反応管を設置し、ｃ
ｄ蒸気圧１．５ａｔｍの条件のもとて原料を融解した。(Comparative example) 2400 g of CdTe polycrystal and ZnTe60 synthesized with stoichiometric composition using the same crystal growth apparatus as in the above example.
g into a pBN boat, and 70 g of Cd for vapor pressure control.
It was vacuum sealed in a quartz reaction tube together with a convection prevention plate. High temperature soaking zone 1105℃, medium temperature soaking zone 1050℃
A quartz reaction tube was installed so that a temperature distribution of 820°C was formed in the low-temperature soaking zone, and the boat was located in the high-temperature soaking zone.
d The raw material was melted under the condition of vapor pressure of 1.5 atm.
ヒータを１ｍｍ／ｈｒで逆方向に移動させ、ボート部の
温度を１１０５℃から１０５０℃に冷却して、Ｃｄ Ｚ
ｎＴｅ結晶を育成した。得られた結晶は、出発原料に対
してほぼ同じ重量の結晶であったが、その平均の大きさ
が１５×２０×２０ｍｍの結晶粒が２０〜３０個存在し
、Ｚｎ濃度から固液界面形状を調べた結果、融液側に対
して凹形をなし、転位密度は７Ｘ１０’〜５×１０“印
−″で、リニエージが存在した。The heater was moved in the opposite direction at 1 mm/hr to cool the temperature of the boat part from 1105°C to 1050°C, and the Cd Z
An nTe crystal was grown. The obtained crystals had approximately the same weight as the starting material, but there were 20 to 30 crystal grains with an average size of 15 x 20 x 20 mm, and the solid-liquid interface shape was determined from the Zn concentration. As a result of examination, it was found that the shape was concave toward the melt side, the dislocation density was 7×10' to 5×10 "mark-", and lineage was present.
［発明の効果］
以上説明したようにこの発明は、化学量論組成よりＴｅ
過剰とされた原料融液を、Ｔｅ蒸気圧を制御しながら８
００℃〜９００℃から９２０℃〜９７０℃へ昇温させる
ことでＣｄＴｅ系結晶を育成するようにしたので、従来
方法に比べ低い成長温度で結晶を育成でき、これによっ
て、不純物の混入量を減らし熱応力を低減できるため、
リニエージやセル構造の転位の発生を抑えることができ
るとともに、昇温により結晶化するため、冷却により結
晶化する方法に対し、熱の伝達方向（液相から固相）が
逆（固相から液相）になるので、固液界面形状が融液側
に凸形になり、多結晶化を抑えることが可能となるとい
う効果がある。[Effect of the invention] As explained above, the present invention has the advantage that Te
While controlling the Te vapor pressure, the excess raw material melt was
Since CdTe-based crystals are grown by raising the temperature from 00°C to 900°C to 920°C to 970°C, crystals can be grown at a lower growth temperature than conventional methods, thereby reducing the amount of impurities mixed in. Because thermal stress can be reduced,
In addition to suppressing the occurrence of lineage and dislocations in the cell structure, the heat transfer direction (from liquid phase to solid phase) is opposite (from solid phase to liquid phase), compared to the method of crystallization by cooling, since the generation of lineage and dislocations in the cell structure can be suppressed. phase), the solid-liquid interface shape becomes convex toward the melt side, which has the effect of suppressing polycrystalization.
さらに、Ｔｅ過剰側で結晶を育成するので、Ｃｄ過剰側
における９７０’Ｃから１０２５℃への昇温による結晶
化に比べて低い温度で結晶化できるため、不純物の混入
量を減らし、かつ熱応力を低減し、高品質の結晶を育成
できるとともに、Ｃｄ蒸気圧（５，９ａｔｍ）に比べ低
いＴｅ蒸気圧（０゜２ａｔｍ）で結晶を汀成できるため
高圧容器とする必要がなく、設備が安価で危険性も少な
い。Furthermore, since crystals are grown on the Te-excessive side, they can be crystallized at a lower temperature compared to crystallization by raising the temperature from 970'C to 1025°C on the Cd-excessive side, which reduces the amount of impurities mixed in and reduces thermal stress. In addition to being able to grow high-quality crystals, there is no need for a high-pressure vessel, and the equipment is inexpensive because the crystals can be grown at Te vapor pressure (0°2 atm), which is lower than Cd vapor pressure (5,9 atm). And it's less dangerous.
第１図は本発明方法が適用される結晶成長装置の一例と
しての三温度帯水平ブリッジマン法を用いる結晶成長装
置の結晶成長開始時の状態を示す断面正面図、
第２図はその装置の結晶成長終了時の状態を示す断面正
面図、
第３図はＣｄＴｅの融液組成と温度との関係を示す状態
図、
第４図は本発明方法による結晶育成中のボート内原料の
固液界面の形状を示す平面図、第５図は従来方法による
結晶育成中のボート内原料の固液界面の形状を示す平面
図である。
１・・・・ヒータ、２・・・・ボート、３・・・・蒸気
圧制御用元素、４・・・・対流防止板、５・・・・石英
反応管。
第 １ 図
第 ３
ｄ
ＯｌＯｍｉＣｐｅｒｃｅｎ↑ｔｅｌｌｕｒｉｕｍ第
４ 図
鷹鴨
第
壷八
手続補正書
（自発）
１、事件の表示
平成１年特許願第２７３５１１号
２゜
発明の名称
ＩＩ−ＶＩ族化合物半導体単結晶の製造方法３゜
補正をする者
事件との関係Figure 1 is a cross-sectional front view showing the state at the start of crystal growth of a crystal growth apparatus using the three-temperature horizontal Bridgman method as an example of a crystal growth apparatus to which the method of the present invention is applied, and Figure 2 is a front view of the apparatus. Figure 3 is a phase diagram showing the relationship between CdTe melt composition and temperature; Figure 4 is the solid-liquid interface of the raw material in the boat during crystal growth according to the method of the present invention. FIG. 5 is a plan view showing the shape of the solid-liquid interface of the raw material in the boat during crystal growth by the conventional method. 1... Heater, 2... Boat, 3... Element for vapor pressure control, 4... Convection prevention plate, 5... Quartz reaction tube. Figure 1 Figure 3 d OlOmiCpercen↑tellurium
4 Illustration Takakamo No. 8 Procedural Amendment (Voluntary) 1. Indication of the Case 1999 Patent Application No. 273511 2゜ Title of Invention Method for Manufacturing Group II-VI Group Compound Semiconductor Single Crystal 3゜ Person Who Makes Amendment Case and connection of
Claims (2)
ｅ蒸気圧を制御しながら８００℃〜９００℃から９２０
℃〜９７０℃へ昇温させることでＣｄＴｅ系結晶を育成
することを特徴とするII−VI族化合物半導体結晶の製造
方法。(1) The raw material melt, which has an excess of Te than the stoichiometric composition, is
e From 800℃ to 900℃ to 920℃ while controlling the vapor pressure.
A method for producing a II-VI group compound semiconductor crystal, which comprises growing a CdTe-based crystal by raising the temperature to 970°C.
装置において低温度均熱帯でＴｅの蒸気圧を制御すると
ともに、原料を入れたボートを中間温度均熱帯から高温
度均熱帯へ移動して結晶を成長させるようにしたことを
特徴とする請求項１記載のII−VI族化合物半導体結晶の
製造方法。(2) In a crystal growth apparatus applying the three-temperature horizontal Bridgman method, the vapor pressure of Te is controlled in the low-temperature soaking zone, and the boat containing the raw materials is moved from the intermediate-temperature soaking zone to the high-temperature soaking zone. 2. The method for producing a II-VI group compound semiconductor crystal according to claim 1, wherein the crystal is grown.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27351189A JPH03137085A (en) | 1989-10-20 | 1989-10-20 | Production of ii-vi compound semiconductor crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27351189A JPH03137085A (en) | 1989-10-20 | 1989-10-20 | Production of ii-vi compound semiconductor crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03137085A true JPH03137085A (en) | 1991-06-11 |
Family
ID=17528892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27351189A Pending JPH03137085A (en) | 1989-10-20 | 1989-10-20 | Production of ii-vi compound semiconductor crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03137085A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021167266A (en) * | 2020-04-09 | 2021-10-21 | エスケイシー・カンパニー・リミテッドSkc Co., Ltd. | Method and system for producing silicon carbide ingot |
| JP2021187728A (en) * | 2020-05-29 | 2021-12-13 | エスケイシー・カンパニー・リミテッドSkc Co., Ltd. | Production method of silicon carbide ingot, and production system of silicon carbide ingot |
-
1989
- 1989-10-20 JP JP27351189A patent/JPH03137085A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021167266A (en) * | 2020-04-09 | 2021-10-21 | エスケイシー・カンパニー・リミテッドSkc Co., Ltd. | Method and system for producing silicon carbide ingot |
| JP2021187728A (en) * | 2020-05-29 | 2021-12-13 | エスケイシー・カンパニー・リミテッドSkc Co., Ltd. | Production method of silicon carbide ingot, and production system of silicon carbide ingot |
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