GB862600A - Improvements in or relating to the preparation of single crystals from the vapour phase - Google Patents

Improvements in or relating to the preparation of single crystals from the vapour phase

Info

Publication number
GB862600A
GB862600A GB17140/59A GB1714059A GB862600A GB 862600 A GB862600 A GB 862600A GB 17140/59 A GB17140/59 A GB 17140/59A GB 1714059 A GB1714059 A GB 1714059A GB 862600 A GB862600 A GB 862600A
Authority
GB
United Kingdom
Prior art keywords
container
compound
silicon carbide
crystals
single crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB17140/59A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB862600A publication Critical patent/GB862600A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/06—Hydrogen phosphides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
    • C01B21/0726—Preparation by carboreductive nitridation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C01B32/984—Preparation from elemental silicon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/14—Peroxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Single crystals of a compound are produced on the inside walls of a porous container by packing the compound or the constituents thereof around the container and heating the packed material under such conditions that a supersaturated vapour of the compound is first formed in the container so as to produce nucleation of single crystals and the degree of supersaturation is thereafter lowered below the nucleation pressure so as to cause growth of the nucleated crystals. The compound may be silicon carbide, boron nitride, boron phosphide, or gallium phosphide. The porous container may be of graphite, silicon carbide, or silica. The container may be in the form of a hollow cylinder closed at each end by a disc. The walls of the cylinder may be thinner at certain points or may be perforated. In the production of silicon carbide, areas of silicon may be dabbed on the inside surface of the cylinder. The packed material may be contained in a carbon crucible which is surrounded by a resistance heating element in the form of an internally lined carbon tube slotted along most of its length. The carbon crucible may be contained in an apparatus which may be evacuated to a pressure of 10-6mm. of Hg. The components of the apparatus may be baked at 2700 DEG C. in an argon-chlorine atmosphere. Crystallization may be effected in the presence of argon which may contain a doping agent. An example specifying temperatures and rate of heating is given. P- and N-type silicon carbide crystals may be produced having a resistivity of 5 X 106 ohm-cm. and 1 X 106 ohm-cm. respectively.
GB17140/59A 1958-05-29 1959-05-20 Improvements in or relating to the preparation of single crystals from the vapour phase Expired GB862600A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73880658A 1958-05-29 1958-05-29

Publications (1)

Publication Number Publication Date
GB862600A true GB862600A (en) 1961-03-15

Family

ID=24969568

Family Applications (1)

Application Number Title Priority Date Filing Date
GB17140/59A Expired GB862600A (en) 1958-05-29 1959-05-20 Improvements in or relating to the preparation of single crystals from the vapour phase

Country Status (3)

Country Link
FR (1) FR1225566A (en)
GB (1) GB862600A (en)
NL (2) NL238194A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5879462A (en) * 1995-10-04 1999-03-09 Abb Research Ltd. Device for heat treatment of objects and a method for producing a susceptor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11155884B1 (en) 2020-10-16 2021-10-26 Klemm & Sohn Gmbh & Co. Kg Double-flowering dwarf Calibrachoa

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5879462A (en) * 1995-10-04 1999-03-09 Abb Research Ltd. Device for heat treatment of objects and a method for producing a susceptor

Also Published As

Publication number Publication date
NL238194A (en)
FR1225566A (en) 1960-07-01
NL121547C (en)

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