GB1044848A - Method for producing homogeneous crystals of mixed semiconductive materials - Google Patents
Method for producing homogeneous crystals of mixed semiconductive materialsInfo
- Publication number
- GB1044848A GB1044848A GB10898/65A GB1089865A GB1044848A GB 1044848 A GB1044848 A GB 1044848A GB 10898/65 A GB10898/65 A GB 10898/65A GB 1089865 A GB1089865 A GB 1089865A GB 1044848 A GB1044848 A GB 1044848A
- Authority
- GB
- United Kingdom
- Prior art keywords
- flask
- semiconductive materials
- melt
- rotated
- producing homogeneous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/007—Mechanisms for moving either the charge or the heater
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
Abstract
A homogeneous crystal of mutually soluble semi-conductor materials is produced by forming a temperature gradient across a sealed flask 6 (Figs. 1, 2 and 3, not shown) containing a melt 30 so as to form a crystalline body 29 at one surface of the flask and slowly rotating the flask so as to cause freezing at one side of the crystalline body and melting at the other. The temperature gradient is formed by the use of annular resistance heating means 15 and cooling air applied through conduit 18. Melt 30 may be rotated in the same direction as the flask by electromagnetic means 27. Flask 6 may have a bulb diameter of 1 1/4 inch and be rotated at 1/8 -\ba1/2 rev/day. It may be of quartz, carbon, or aluminium nitride.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US352061A US3335084A (en) | 1964-03-16 | 1964-03-16 | Method for producing homogeneous crystals of mixed semiconductive materials |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1044848A true GB1044848A (en) | 1966-10-05 |
Family
ID=23383622
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB10898/65A Expired GB1044848A (en) | 1964-03-16 | 1965-03-15 | Method for producing homogeneous crystals of mixed semiconductive materials |
Country Status (3)
Country | Link |
---|---|
US (1) | US3335084A (en) |
DE (1) | DE1265126B (en) |
GB (1) | GB1044848A (en) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3464812A (en) * | 1966-03-29 | 1969-09-02 | Massachusetts Inst Technology | Process for making solids and products thereof |
US3468363A (en) * | 1967-10-10 | 1969-09-23 | Texas Instruments Inc | Method of producing homogeneous ingots of mercury cadmium telluride |
GB1181614A (en) * | 1968-03-19 | 1970-02-18 | Siemens Ag | Process for Producing Homogeneously Doped Selenium. |
US3537912A (en) * | 1968-03-20 | 1970-11-03 | Gen Electric | Method of growing chalcogenide pseudo-binary crystals of uniform composition |
US3656944A (en) * | 1970-02-16 | 1972-04-18 | Texas Instruments Inc | Method of producing homogeneous ingots of a metallic alloy |
US3873463A (en) * | 1972-02-23 | 1975-03-25 | Philips Corp | Method of and device for manufacturing substituted single crystals |
US3898051A (en) * | 1973-12-28 | 1975-08-05 | Crystal Syst | Crystal growing |
DE2445146C3 (en) * | 1974-09-20 | 1979-03-08 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V., 3400 Goettingen | Method and apparatus for forming epitaxial layers |
US9157167B1 (en) | 2008-06-05 | 2015-10-13 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
WO2009149254A1 (en) * | 2008-06-05 | 2009-12-10 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US8097081B2 (en) * | 2008-06-05 | 2012-01-17 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US8871024B2 (en) | 2008-06-05 | 2014-10-28 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US8303710B2 (en) * | 2008-06-18 | 2012-11-06 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US20100003492A1 (en) * | 2008-07-07 | 2010-01-07 | Soraa, Inc. | High quality large area bulk non-polar or semipolar gallium based substrates and methods |
US8124996B2 (en) | 2008-08-04 | 2012-02-28 | Soraa, Inc. | White light devices using non-polar or semipolar gallium containing materials and phosphors |
US8284810B1 (en) | 2008-08-04 | 2012-10-09 | Soraa, Inc. | Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods |
US8021481B2 (en) * | 2008-08-07 | 2011-09-20 | Soraa, Inc. | Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride |
US10036099B2 (en) | 2008-08-07 | 2018-07-31 | Slt Technologies, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
US8430958B2 (en) | 2008-08-07 | 2013-04-30 | Soraa, Inc. | Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride |
US8979999B2 (en) | 2008-08-07 | 2015-03-17 | Soraa, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
US8323405B2 (en) * | 2008-08-07 | 2012-12-04 | Soraa, Inc. | Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer |
US8148801B2 (en) * | 2008-08-25 | 2012-04-03 | Soraa, Inc. | Nitride crystal with removable surface layer and methods of manufacture |
US8354679B1 (en) | 2008-10-02 | 2013-01-15 | Soraa, Inc. | Microcavity light emitting diode method of manufacture |
US8455894B1 (en) | 2008-10-17 | 2013-06-04 | Soraa, Inc. | Photonic-crystal light emitting diode and method of manufacture |
USRE47114E1 (en) | 2008-12-12 | 2018-11-06 | Slt Technologies, Inc. | Polycrystalline group III metal nitride with getter and method of making |
US9543392B1 (en) | 2008-12-12 | 2017-01-10 | Soraa, Inc. | Transparent group III metal nitride and method of manufacture |
US8878230B2 (en) | 2010-03-11 | 2014-11-04 | Soraa, Inc. | Semi-insulating group III metal nitride and method of manufacture |
US8987156B2 (en) | 2008-12-12 | 2015-03-24 | Soraa, Inc. | Polycrystalline group III metal nitride with getter and method of making |
US8461071B2 (en) | 2008-12-12 | 2013-06-11 | Soraa, Inc. | Polycrystalline group III metal nitride with getter and method of making |
US8299473B1 (en) | 2009-04-07 | 2012-10-30 | Soraa, Inc. | Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors |
US8306081B1 (en) | 2009-05-27 | 2012-11-06 | Soraa, Inc. | High indium containing InGaN substrates for long wavelength optical devices |
US8435347B2 (en) | 2009-09-29 | 2013-05-07 | Soraa, Inc. | High pressure apparatus with stackable rings |
US9175418B2 (en) | 2009-10-09 | 2015-11-03 | Soraa, Inc. | Method for synthesis of high quality large area bulk gallium based crystals |
IT1396761B1 (en) * | 2009-10-21 | 2012-12-14 | Saet Spa | METHOD AND DEVICE FOR OBTAINING A MULTI-CRYSTALLINE SEMICONDUCTOR MATERIAL, IN PARTICULAR SILICON |
US9564320B2 (en) | 2010-06-18 | 2017-02-07 | Soraa, Inc. | Large area nitride crystal and method for making it |
US8729559B2 (en) | 2010-10-13 | 2014-05-20 | Soraa, Inc. | Method of making bulk InGaN substrates and devices thereon |
US8786053B2 (en) | 2011-01-24 | 2014-07-22 | Soraa, Inc. | Gallium-nitride-on-handle substrate materials and devices and method of manufacture |
US8482104B2 (en) | 2012-01-09 | 2013-07-09 | Soraa, Inc. | Method for growth of indium-containing nitride films |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2801192A (en) * | 1953-04-20 | 1957-07-30 | Ericsson Telefon Ab L M | Purification process for removing soluble impurities from fusible solid substances |
NL97193C (en) * | 1953-12-08 |
-
1964
- 1964-03-16 US US352061A patent/US3335084A/en not_active Expired - Lifetime
-
1965
- 1965-03-09 DE DEG43030A patent/DE1265126B/en active Pending
- 1965-03-15 GB GB10898/65A patent/GB1044848A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US3335084A (en) | 1967-08-08 |
DE1265126B (en) | 1968-04-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1044848A (en) | Method for producing homogeneous crystals of mixed semiconductive materials | |
ES348181A1 (en) | Method of manufacturing filamentary bodies of circular cross-section consisting of silicon carbide single crystals and filamentary bodies obtained by said method | |
ES445617A1 (en) | Novel silicon crystals and process for their preparation | |
IT964946B (en) | PROCEDURE FOR THE GROWTH OF MONOCRYSTALLINE GAL LIO GARNETS | |
GB931992A (en) | Improvements in or relating to methods of manufacturing crystalline semi-conductor material | |
GB908033A (en) | Improvements in semiconductive wafers and methods of making the same | |
ES403409A1 (en) | Abrasive material | |
FR2133840A1 (en) | Thin quartz glass beakers - consisting of fused slip cast powder | |
GB1081600A (en) | A method of melting a rod of crystalline material zone-by-zone | |
GB1031560A (en) | Improvements in or relating to the production of monocrystalline semiconductor material | |
ES365930A1 (en) | Crystals, in particular crystal whiskers and objects comprising such crystals | |
SpringThorpe | The preparation of single crystal orthorhombic SiP2 | |
GB894739A (en) | Improvements in or relating to methods for the treatment of meltable material in rod-shaped form by zone-melting | |
GB1010388A (en) | An energy transmitting device | |
GB1065728A (en) | Improvements in or relating to the preparation of group b and vb compound crystals | |
GB1094429A (en) | Crucible-free zone-by-zone melting | |
GB1037909A (en) | Improvements relating to methods of growing semiconductor substances | |
FR2158634A5 (en) | Hexagonal silicon carbide mfr - by sublimation in sealed crucible | |
GB1297755A (en) | ||
ES284780A1 (en) | Procedure for the obtaining of a semiconductor provision (Machine-translation by Google Translate, not legally binding) | |
CA901079A (en) | Method of producing single crystals of semiconductor material by floating-zone melting, semiconductor single crystal produced by said method and device for carrying out the same | |
GB1108633A (en) | Ceramic composite material | |
GB1099637A (en) | Improvements in or relating to the manufacture of crystals of semiconductor materials | |
GB862600A (en) | Improvements in or relating to the preparation of single crystals from the vapour phase | |
GB751126A (en) | Improvements in or relating to methods of producing semi-conductive monocrystals |