GB1455840A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1455840A
GB1455840A GB5994273A GB5994273A GB1455840A GB 1455840 A GB1455840 A GB 1455840A GB 5994273 A GB5994273 A GB 5994273A GB 5994273 A GB5994273 A GB 5994273A GB 1455840 A GB1455840 A GB 1455840A
Authority
GB
United Kingdom
Prior art keywords
layer
atoms
doped
transistor
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5994273A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB1455840A publication Critical patent/GB1455840A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
    • H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233—Manufacture of photoelectric screens or charge-storage screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
GB5994273A 1973-01-05 1973-12-28 Semiconductor devices Expired GB1455840A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US32140673A 1973-01-05 1973-01-05

Publications (1)

Publication Number Publication Date
GB1455840A true GB1455840A (en) 1976-11-17

Family

ID=23250492

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5994273A Expired GB1455840A (en) 1973-01-05 1973-12-28 Semiconductor devices

Country Status (5)

Country Link
JP (1) JPS50100980A (enrdf_load_stackoverflow)
CA (1) CA1010158A (enrdf_load_stackoverflow)
DE (1) DE2365222A1 (enrdf_load_stackoverflow)
FR (1) FR2213587B1 (enrdf_load_stackoverflow)
GB (1) GB1455840A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2933694A1 (de) * 1978-08-25 1980-03-06 Rca Corp Integrierter schaltkreis
US4959699A (en) * 1978-10-13 1990-09-25 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5338961A (en) * 1978-10-13 1994-08-16 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5931224B2 (ja) * 1974-02-18 1984-07-31 日本電気株式会社 半導体装置
JPS5799779A (en) * 1980-12-12 1982-06-21 Citizen Watch Co Ltd Thin-film transistor
JPH0618204B2 (ja) * 1987-01-16 1994-03-09 株式会社日立製作所 半導体装置の製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2933694A1 (de) * 1978-08-25 1980-03-06 Rca Corp Integrierter schaltkreis
US4959699A (en) * 1978-10-13 1990-09-25 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5191396A (en) * 1978-10-13 1993-03-02 International Rectifier Corp. High power mosfet with low on-resistance and high breakdown voltage
US5338961A (en) * 1978-10-13 1994-08-16 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5598018A (en) * 1978-10-13 1997-01-28 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5742087A (en) * 1978-10-13 1998-04-21 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
US6046473A (en) * 1995-06-07 2000-04-04 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of MOS-gated power devices

Also Published As

Publication number Publication date
CA1010158A (en) 1977-05-10
DE2365222A1 (de) 1974-07-18
JPS50100980A (enrdf_load_stackoverflow) 1975-08-11
FR2213587B1 (enrdf_load_stackoverflow) 1977-08-26
FR2213587A1 (enrdf_load_stackoverflow) 1974-08-02

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee