JPS50100980A - - Google Patents

Info

Publication number
JPS50100980A
JPS50100980A JP49005064A JP506474A JPS50100980A JP S50100980 A JPS50100980 A JP S50100980A JP 49005064 A JP49005064 A JP 49005064A JP 506474 A JP506474 A JP 506474A JP S50100980 A JPS50100980 A JP S50100980A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP49005064A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS50100980A publication Critical patent/JPS50100980A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
    • H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233—Manufacture of photoelectric screens or charge-storage screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
JP49005064A 1973-01-05 1974-01-05 Pending JPS50100980A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US32140673A 1973-01-05 1973-01-05

Publications (1)

Publication Number Publication Date
JPS50100980A true JPS50100980A (enrdf_load_stackoverflow) 1975-08-11

Family

ID=23250492

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49005064A Pending JPS50100980A (enrdf_load_stackoverflow) 1973-01-05 1974-01-05

Country Status (5)

Country Link
JP (1) JPS50100980A (enrdf_load_stackoverflow)
CA (1) CA1010158A (enrdf_load_stackoverflow)
DE (1) DE2365222A1 (enrdf_load_stackoverflow)
FR (1) FR2213587B1 (enrdf_load_stackoverflow)
GB (1) GB1455840A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50114986A (enrdf_load_stackoverflow) * 1974-02-18 1975-09-09
JPS5799779A (en) * 1980-12-12 1982-06-21 Citizen Watch Co Ltd Thin-film transistor
JPS62188278A (ja) * 1987-01-16 1987-08-17 Hitachi Ltd 半導体装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4196443A (en) * 1978-08-25 1980-04-01 Rca Corporation Buried contact configuration for CMOS/SOS integrated circuits
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US5191396B1 (en) * 1978-10-13 1995-12-26 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50114986A (enrdf_load_stackoverflow) * 1974-02-18 1975-09-09
JPS5799779A (en) * 1980-12-12 1982-06-21 Citizen Watch Co Ltd Thin-film transistor
JPS62188278A (ja) * 1987-01-16 1987-08-17 Hitachi Ltd 半導体装置

Also Published As

Publication number Publication date
CA1010158A (en) 1977-05-10
DE2365222A1 (de) 1974-07-18
GB1455840A (en) 1976-11-17
FR2213587B1 (enrdf_load_stackoverflow) 1977-08-26
FR2213587A1 (enrdf_load_stackoverflow) 1974-08-02

Similar Documents

Publication Publication Date Title
AR201758A1 (enrdf_load_stackoverflow)
AU476761B2 (enrdf_load_stackoverflow)
AU465372B2 (enrdf_load_stackoverflow)
AR201235Q (enrdf_load_stackoverflow)
AR201231Q (enrdf_load_stackoverflow)
AU474593B2 (enrdf_load_stackoverflow)
AU474511B2 (enrdf_load_stackoverflow)
AU474838B2 (enrdf_load_stackoverflow)
AU465453B2 (enrdf_load_stackoverflow)
AU471343B2 (enrdf_load_stackoverflow)
AU465434B2 (enrdf_load_stackoverflow)
AU450229B2 (enrdf_load_stackoverflow)
AU476714B2 (enrdf_load_stackoverflow)
AR201229Q (enrdf_load_stackoverflow)
AU466283B2 (enrdf_load_stackoverflow)
AU476696B2 (enrdf_load_stackoverflow)
AU472848B2 (enrdf_load_stackoverflow)
AR199451A1 (enrdf_load_stackoverflow)
AU477823B2 (enrdf_load_stackoverflow)
AU461342B2 (enrdf_load_stackoverflow)
AU471461B2 (enrdf_load_stackoverflow)
AR200256A1 (enrdf_load_stackoverflow)
AR201432A1 (enrdf_load_stackoverflow)
AR210729A1 (enrdf_load_stackoverflow)
AU476873B1 (enrdf_load_stackoverflow)