DE2365222A1 - Verfahren zur herstellung eines halbleiter-schaltelements mit einer zone relativ langer minoritaetstraeger-lebensdauer - Google Patents

Verfahren zur herstellung eines halbleiter-schaltelements mit einer zone relativ langer minoritaetstraeger-lebensdauer

Info

Publication number
DE2365222A1
DE2365222A1 DE2365222A DE2365222A DE2365222A1 DE 2365222 A1 DE2365222 A1 DE 2365222A1 DE 2365222 A DE2365222 A DE 2365222A DE 2365222 A DE2365222 A DE 2365222A DE 2365222 A1 DE2365222 A1 DE 2365222A1
Authority
DE
Germany
Prior art keywords
silicon layer
silicon
doped
layer
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE2365222A
Other languages
German (de)
English (en)
Inventor
Prosenjit Rai-Choudhury
Dieter K Schroder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of DE2365222A1 publication Critical patent/DE2365222A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
    • H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233—Manufacture of photoelectric screens or charge-storage screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
DE2365222A 1973-01-05 1973-12-31 Verfahren zur herstellung eines halbleiter-schaltelements mit einer zone relativ langer minoritaetstraeger-lebensdauer Pending DE2365222A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US32140673A 1973-01-05 1973-01-05

Publications (1)

Publication Number Publication Date
DE2365222A1 true DE2365222A1 (de) 1974-07-18

Family

ID=23250492

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2365222A Pending DE2365222A1 (de) 1973-01-05 1973-12-31 Verfahren zur herstellung eines halbleiter-schaltelements mit einer zone relativ langer minoritaetstraeger-lebensdauer

Country Status (5)

Country Link
JP (1) JPS50100980A (enrdf_load_stackoverflow)
CA (1) CA1010158A (enrdf_load_stackoverflow)
DE (1) DE2365222A1 (enrdf_load_stackoverflow)
FR (1) FR2213587B1 (enrdf_load_stackoverflow)
GB (1) GB1455840A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5931224B2 (ja) * 1974-02-18 1984-07-31 日本電気株式会社 半導体装置
US4196443A (en) * 1978-08-25 1980-04-01 Rca Corporation Buried contact configuration for CMOS/SOS integrated circuits
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US5191396B1 (en) * 1978-10-13 1995-12-26 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
JPS5799779A (en) * 1980-12-12 1982-06-21 Citizen Watch Co Ltd Thin-film transistor
JPH0618204B2 (ja) * 1987-01-16 1994-03-09 株式会社日立製作所 半導体装置の製造方法
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices

Also Published As

Publication number Publication date
CA1010158A (en) 1977-05-10
JPS50100980A (enrdf_load_stackoverflow) 1975-08-11
GB1455840A (en) 1976-11-17
FR2213587B1 (enrdf_load_stackoverflow) 1977-08-26
FR2213587A1 (enrdf_load_stackoverflow) 1974-08-02

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