GB1255415A - Semiconductor device with improved ohmic contact - Google Patents
Semiconductor device with improved ohmic contactInfo
- Publication number
- GB1255415A GB1255415A GB1109769A GB1109769A GB1255415A GB 1255415 A GB1255415 A GB 1255415A GB 1109769 A GB1109769 A GB 1109769A GB 1109769 A GB1109769 A GB 1109769A GB 1255415 A GB1255415 A GB 1255415A
- Authority
- GB
- United Kingdom
- Prior art keywords
- contacts
- layer
- phosphorus
- semi
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 6
- 229910052698 phosphorus Inorganic materials 0.000 abstract 6
- 239000011574 phosphorus Substances 0.000 abstract 6
- 239000000463 material Substances 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000005137 deposition process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000005360 phosphosilicate glass Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1,255,415. Semi-conductor devices. R.C.A. CORPORATION. 3 March, 1969 [22 March, 1968], No. 11097/69. Heading H1K. A region of a semi-conductor device having a junction intersecting a surface where it is covered with an insulating layer is contacted by means of a layer of crystalline semi-conductor material disposed in an opening in the insulating layer and having a thickness greater than that of the insulating layer and a layer of metal on the crystalline layer. As shown, Fig. 1, in an overlay transistor having an N type collector region 6 and a P type base region 10 provided with heavily doped collector and annular base contact regions 2 and 8 respectively, a plurality of emitter regions 14 are provided by depositing phosphorus from the vapour phase to form a compound layer (e.g. P 2 O 5 ) over the surface of an apertured SiO 2 mask 20, and heating to diffuse-in the phosphorus. The phospho-silicate glass layer which forms over the mask is removed by etching. The wafer is then subjected to an epitaxial deposition process to provide N type emitter contacts 16 in the windows the process being continued until these regions have grown to a thickness greater than that of the oxide layer 20 and have started to spread out on its surface. Windows are then formed over the base contact regions and aluminium is deposited, masked, etched and sintered to produce emitter contacts 18 and interconnections (not shown) and base contacts 12. The insulating layer may also be silicon nitride. In an alternative embodiment, Figs. 2 to 4 (not shown), emitter windows are formed in the insulating layer (20) a shallow phosphorus diffusion is performed, N+ type contacts (22) heavily doped with phosphorus are epitaxially grown in the windows, the surface impurity concentration of the epitaxial contacts is increased by a phosphorus diffusion, and the device is then heated to diffuse phosphorus from the epitaxial contacts (22) into the P type base region (10) to form the emitter regions (24). Ohmic contacts are then applied. The crystalline contact material may also be a polycrystalline semi-conductor material and the overlying metal may also be indium or tungsten. The semi-conductor wafer may also be of germanium or of a III-V compound.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US71542568A | 1968-03-22 | 1968-03-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1255415A true GB1255415A (en) | 1971-12-01 |
Family
ID=24873995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1109769A Expired GB1255415A (en) | 1968-03-22 | 1969-03-03 | Semiconductor device with improved ohmic contact |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS4921462B1 (en) |
| BR (1) | BR6907437D0 (en) |
| DE (1) | DE1913712A1 (en) |
| ES (1) | ES364975A1 (en) |
| FR (1) | FR2004483A1 (en) |
| GB (1) | GB1255415A (en) |
| NL (1) | NL6904389A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE755371A (en) * | 1969-08-27 | 1971-02-01 | Ibm | OHMIC CONTACTS FOR SEMICONDUCTOR DEVICES |
| FR2204889B1 (en) * | 1972-10-27 | 1975-03-28 | Sescosem |
-
1968
- 1968-03-20 ES ES364975A patent/ES364975A1/en not_active Expired
-
1969
- 1969-03-03 GB GB1109769A patent/GB1255415A/en not_active Expired
- 1969-03-12 FR FR6906888A patent/FR2004483A1/en not_active Withdrawn
- 1969-03-18 DE DE19691913712 patent/DE1913712A1/en active Pending
- 1969-03-21 NL NL6904389A patent/NL6904389A/xx unknown
- 1969-03-21 BR BR20743769A patent/BR6907437D0/en unknown
-
1971
- 1971-08-20 JP JP6397071A patent/JPS4921462B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| BR6907437D0 (en) | 1973-04-26 |
| NL6904389A (en) | 1969-09-24 |
| ES364975A1 (en) | 1971-02-16 |
| JPS4921462B1 (en) | 1974-06-01 |
| FR2004483A1 (en) | 1969-11-28 |
| DE1913712A1 (en) | 1969-10-09 |
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