GB1442930A - Manufacture of uniformly doped rod-shaped p-conductive silicon monocrystals - Google Patents

Manufacture of uniformly doped rod-shaped p-conductive silicon monocrystals

Info

Publication number
GB1442930A
GB1442930A GB3955974A GB3955974A GB1442930A GB 1442930 A GB1442930 A GB 1442930A GB 3955974 A GB3955974 A GB 3955974A GB 3955974 A GB3955974 A GB 3955974A GB 1442930 A GB1442930 A GB 1442930A
Authority
GB
United Kingdom
Prior art keywords
manufacture
shaped
conductive silicon
gallium
germanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3955974A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1442930A publication Critical patent/GB1442930A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P34/20—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)
GB3955974A 1974-02-18 1974-09-11 Manufacture of uniformly doped rod-shaped p-conductive silicon monocrystals Expired GB1442930A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2407697A DE2407697C3 (de) 1974-02-18 1974-02-18 Verfahren zum Herstellen eines homogen Ga-dotierten Siliciumeinkristalls

Publications (1)

Publication Number Publication Date
GB1442930A true GB1442930A (en) 1976-07-14

Family

ID=5907718

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3955974A Expired GB1442930A (en) 1974-02-18 1974-09-11 Manufacture of uniformly doped rod-shaped p-conductive silicon monocrystals

Country Status (12)

Country Link
JP (1) JPS5329572B2 (enExample)
AT (1) AT339379B (enExample)
BE (1) BE816719A (enExample)
DE (1) DE2407697C3 (enExample)
DK (1) DK658274A (enExample)
FR (1) FR2261055B1 (enExample)
GB (1) GB1442930A (enExample)
IT (1) IT1031627B (enExample)
NL (1) NL7410745A (enExample)
PL (1) PL91842B1 (enExample)
SU (1) SU717999A3 (enExample)
ZA (1) ZA746269B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9799736B1 (en) 2016-07-20 2017-10-24 International Business Machines Corporation High acceptor level doping in silicon germanium

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9799736B1 (en) 2016-07-20 2017-10-24 International Business Machines Corporation High acceptor level doping in silicon germanium
US10361306B2 (en) 2016-07-20 2019-07-23 International Business Machines Corporation High acceptor level doping in silicon germanium

Also Published As

Publication number Publication date
BE816719A (fr) 1974-10-16
IT1031627B (it) 1979-05-10
JPS5329572B2 (enExample) 1978-08-22
DE2407697C3 (de) 1978-11-30
AT339379B (de) 1977-10-10
DK658274A (enExample) 1975-10-27
JPS50120253A (enExample) 1975-09-20
SU717999A3 (ru) 1980-02-25
ATA667874A (de) 1977-02-15
FR2261055A1 (enExample) 1975-09-12
ZA746269B (en) 1975-10-29
DE2407697A1 (de) 1975-09-18
DE2407697B2 (de) 1978-04-06
NL7410745A (nl) 1975-08-20
PL91842B1 (enExample) 1977-03-31
FR2261055B1 (enExample) 1979-01-05

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee