GB1431205A - Monolithic semiconductor circuit arrangement - Google Patents

Monolithic semiconductor circuit arrangement

Info

Publication number
GB1431205A
GB1431205A GB2582573A GB2582573A GB1431205A GB 1431205 A GB1431205 A GB 1431205A GB 2582573 A GB2582573 A GB 2582573A GB 2582573 A GB2582573 A GB 2582573A GB 1431205 A GB1431205 A GB 1431205A
Authority
GB
United Kingdom
Prior art keywords
fet
potential
current
over
fed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2582573A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1431205A publication Critical patent/GB1431205A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Static Random-Access Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Amplifiers (AREA)
GB2582573A 1972-06-30 1973-05-30 Monolithic semiconductor circuit arrangement Expired GB1431205A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2232274A DE2232274C2 (de) 1972-06-30 1972-06-30 Statischer Halbleiterspeicher mit Feldeffekttransistoren

Publications (1)

Publication Number Publication Date
GB1431205A true GB1431205A (en) 1976-04-07

Family

ID=5849362

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2582573A Expired GB1431205A (en) 1972-06-30 1973-05-30 Monolithic semiconductor circuit arrangement

Country Status (5)

Country Link
JP (1) JPS545937B2 (enrdf_load_stackoverflow)
DE (1) DE2232274C2 (enrdf_load_stackoverflow)
FR (1) FR2241929B1 (enrdf_load_stackoverflow)
GB (1) GB1431205A (enrdf_load_stackoverflow)
IT (1) IT981508B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0029231A1 (en) * 1979-11-19 1981-05-27 Nec Corporation Reference voltage generator circuit

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3970875A (en) * 1974-11-21 1976-07-20 International Business Machines Corporation LSI chip compensator for process parameter variations
JPS54152845A (en) * 1978-05-24 1979-12-01 Hitachi Ltd High dielectric strength mosfet circuit
DE2855844C2 (de) * 1978-12-22 1984-06-07 Texas Instruments Deutschland Gmbh, 8050 Freising Schaltung für einen Verstärker mit einem Feldeffekttransistor
US4394751A (en) * 1980-10-23 1983-07-19 Standard Microsystems Corporation Low power storage cell
JPS5799765A (en) * 1980-12-12 1982-06-21 Fujitsu Ltd Semiconductor resistance element
US4433252A (en) * 1982-01-18 1984-02-21 International Business Machines Corporation Input signal responsive pulse generating and biasing circuit for integrated circuits
JPH0493997U (enrdf_load_stackoverflow) * 1990-12-21 1992-08-14
JP3017871B2 (ja) * 1991-01-02 2000-03-13 テキサス インスツルメンツ インコーポレイテツド Ｉｃデバイスに対するチップ上のバラツキ検知回路

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3508084A (en) * 1967-10-06 1970-04-21 Texas Instruments Inc Enhancement-mode mos circuitry
JPS528660A (en) * 1975-07-09 1977-01-22 Hitachi Ltd Anaerobic digestion of organic waste fluid

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0029231A1 (en) * 1979-11-19 1981-05-27 Nec Corporation Reference voltage generator circuit

Also Published As

Publication number Publication date
FR2241929B1 (enrdf_load_stackoverflow) 1976-06-18
JPS545937B2 (enrdf_load_stackoverflow) 1979-03-23
DE2232274C2 (de) 1982-05-06
FR2241929A1 (enrdf_load_stackoverflow) 1975-03-21
IT981508B (it) 1974-10-10
DE2232274A1 (de) 1974-01-31
JPS4959541A (enrdf_load_stackoverflow) 1974-06-10

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee