GB1425102A - Methods of etching gallium arsenide substrates and epitaxially depositing gallium arsenide thereon - Google Patents
Methods of etching gallium arsenide substrates and epitaxially depositing gallium arsenide thereonInfo
- Publication number
- GB1425102A GB1425102A GB1384073A GB1384073A GB1425102A GB 1425102 A GB1425102 A GB 1425102A GB 1384073 A GB1384073 A GB 1384073A GB 1384073 A GB1384073 A GB 1384073A GB 1425102 A GB1425102 A GB 1425102A
- Authority
- GB
- United Kingdom
- Prior art keywords
- gallium arsenide
- hydrogen
- helium
- flow
- carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title abstract 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 title abstract 6
- 239000000758 substrate Substances 0.000 title abstract 5
- 238000005530 etching Methods 0.000 title abstract 2
- 238000000151 deposition Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000001257 hydrogen Substances 0.000 abstract 6
- 229910052739 hydrogen Inorganic materials 0.000 abstract 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 5
- 229910052734 helium Inorganic materials 0.000 abstract 4
- 239000001307 helium Substances 0.000 abstract 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract 4
- OEYOHULQRFXULB-UHFFFAOYSA-N arsenic trichloride Chemical compound Cl[As](Cl)Cl OEYOHULQRFXULB-UHFFFAOYSA-N 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- 239000002019 doping agent Substances 0.000 abstract 2
- 229910052733 gallium Inorganic materials 0.000 abstract 2
- 150000002431 hydrogen Chemical class 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30621—Vapour phase etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00237060A US3808072A (en) | 1972-03-22 | 1972-03-22 | In situ etching of gallium arsenide during vapor phase growth of epitaxial gallium arsenide |
| US24931172A | 1972-05-01 | 1972-05-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1425102A true GB1425102A (en) | 1976-02-18 |
Family
ID=26930348
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1384073A Expired GB1425102A (en) | 1972-03-22 | 1973-03-22 | Methods of etching gallium arsenide substrates and epitaxially depositing gallium arsenide thereon |
| GB1383973A Expired GB1425101A (en) | 1972-03-22 | 1973-03-22 | Schottky barrier diode devices and methods of fabricating the same |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1383973A Expired GB1425101A (en) | 1972-03-22 | 1973-03-22 | Schottky barrier diode devices and methods of fabricating the same |
Country Status (6)
| Country | Link |
|---|---|
| JP (2) | JPS5232831B2 (xx) |
| FR (2) | FR2176998B1 (xx) |
| GB (2) | GB1425102A (xx) |
| IT (2) | IT979892B (xx) |
| NL (2) | NL162313C (xx) |
| SE (2) | SE388972B (xx) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5244582A (en) * | 1975-10-06 | 1977-04-07 | New Japan Radio Co Ltd | Semiconductor device and process for production of the same |
| JPS55114620A (en) * | 1979-02-22 | 1980-09-04 | Yoshio Kaneda | Driver's cab on tractor or the like |
| JPS56169331A (en) * | 1980-05-30 | 1981-12-26 | Nec Corp | Vapor phase etching method for compound semiconductor |
| JPS5770810A (en) * | 1980-10-17 | 1982-05-01 | Lion Corp | Cosmetic for hair |
| JPS60222410A (ja) * | 1984-04-20 | 1985-11-07 | Asahi Denka Kogyo Kk | シヤンプ−組成物 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4916231A (xx) * | 1972-06-06 | 1974-02-13 |
-
1973
- 1973-03-09 SE SE7303348A patent/SE388972B/xx unknown
- 1973-03-09 SE SE7303347A patent/SE375557B/xx unknown
- 1973-03-16 IT IT4887073A patent/IT979892B/it active
- 1973-03-16 IT IT4886973A patent/IT982897B/it active
- 1973-03-21 NL NL7303954A patent/NL162313C/xx not_active IP Right Cessation
- 1973-03-21 NL NL7303958A patent/NL160989C/xx not_active IP Right Cessation
- 1973-03-21 FR FR7310133A patent/FR2176998B1/fr not_active Expired
- 1973-03-21 FR FR7310134A patent/FR2176999B1/fr not_active Expired
- 1973-03-22 GB GB1384073A patent/GB1425102A/en not_active Expired
- 1973-03-22 GB GB1383973A patent/GB1425101A/en not_active Expired
- 1973-03-22 JP JP3193373A patent/JPS5232831B2/ja not_active Expired
- 1973-05-10 JP JP5125473A patent/JPS5433711B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| IT979892B (it) | 1974-09-30 |
| NL160989B (nl) | 1979-07-16 |
| SE388972B (sv) | 1976-10-18 |
| JPS5232831B2 (xx) | 1977-08-24 |
| FR2176998B1 (xx) | 1976-11-05 |
| JPS5019367A (xx) | 1975-02-28 |
| FR2176998A1 (xx) | 1973-11-02 |
| NL162313C (nl) | 1980-05-16 |
| JPS5433711B2 (xx) | 1979-10-22 |
| NL160989C (nl) | 1979-12-17 |
| GB1425101A (en) | 1976-02-18 |
| DE2313768B2 (de) | 1975-11-20 |
| NL162313B (nl) | 1979-12-17 |
| FR2176999A1 (xx) | 1973-11-02 |
| NL7303954A (xx) | 1973-09-25 |
| FR2176999B1 (xx) | 1978-03-03 |
| SE375557B (xx) | 1975-04-21 |
| NL7303958A (xx) | 1973-09-25 |
| JPS4948281A (xx) | 1974-05-10 |
| DE2313768A1 (de) | 1973-10-04 |
| IT982897B (it) | 1974-10-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |