GB1421924A - Paired transistor arrangement - Google Patents

Paired transistor arrangement

Info

Publication number
GB1421924A
GB1421924A GB1279773A GB1279773A GB1421924A GB 1421924 A GB1421924 A GB 1421924A GB 1279773 A GB1279773 A GB 1279773A GB 1279773 A GB1279773 A GB 1279773A GB 1421924 A GB1421924 A GB 1421924A
Authority
GB
United Kingdom
Prior art keywords
transistors
sections
corners
group
march
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1279773A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB1421924A publication Critical patent/GB1421924A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Semiconductor Memories (AREA)
GB1279773A 1972-03-16 1973-03-16 Paired transistor arrangement Expired GB1421924A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2697772A JPS53675B2 (en:Method) 1972-03-16 1972-03-16

Publications (1)

Publication Number Publication Date
GB1421924A true GB1421924A (en) 1976-01-21

Family

ID=12208203

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1279773A Expired GB1421924A (en) 1972-03-16 1973-03-16 Paired transistor arrangement

Country Status (7)

Country Link
JP (1) JPS53675B2 (en:Method)
AU (1) AU470370B2 (en:Method)
CA (1) CA972071A (en:Method)
DE (1) DE2313196A1 (en:Method)
FR (1) FR2176129B3 (en:Method)
GB (1) GB1421924A (en:Method)
IT (1) IT979867B (en:Method)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175604A (en) * 1985-11-15 1992-12-29 Kabushiki Kaisha Toshiba Field-effect transistor device
US5488249A (en) * 1992-12-24 1996-01-30 At&T Global Information Solutions Company Differential analog transistors constructed from digital transistors
US5610429A (en) * 1994-05-06 1997-03-11 At&T Global Information Solutions Company Differential analog transistors constructed from digital transistors

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586322B2 (ja) * 1975-02-19 1983-02-04 株式会社日立製作所 熱帰還を考慮した集積回路
JPS54107688A (en) * 1978-02-13 1979-08-23 Seiko Epson Corp Semiconductor integrated circuit for temperature detection
US4467227A (en) * 1981-10-29 1984-08-21 Hughes Aircraft Company Channel charge compensation switch with first order process independence
JPS5894232A (ja) * 1981-11-30 1983-06-04 Toshiba Corp 半導体アナログスイッチ回路
DE3818533C2 (de) * 1987-06-01 1994-05-26 Mitsubishi Electric Corp Feldeffekttransistor
JP3523521B2 (ja) 1998-04-09 2004-04-26 松下電器産業株式会社 Ｍｏｓトランジスタ対装置
JP2009188223A (ja) * 2008-02-07 2009-08-20 Seiko Instruments Inc 半導体装置
JP5945155B2 (ja) 2012-05-07 2016-07-05 矢崎総業株式会社 電線の外部導体端子の接続構造
JP5863892B2 (ja) * 2014-07-07 2016-02-17 ルネサスエレクトロニクス株式会社 半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175604A (en) * 1985-11-15 1992-12-29 Kabushiki Kaisha Toshiba Field-effect transistor device
US5488249A (en) * 1992-12-24 1996-01-30 At&T Global Information Solutions Company Differential analog transistors constructed from digital transistors
US5610429A (en) * 1994-05-06 1997-03-11 At&T Global Information Solutions Company Differential analog transistors constructed from digital transistors

Also Published As

Publication number Publication date
JPS4895194A (en:Method) 1973-12-06
FR2176129A1 (en:Method) 1973-10-26
DE2313196A1 (de) 1973-10-04
IT979867B (it) 1974-09-30
AU470370B2 (en) 1976-03-11
CA972071A (en) 1975-07-29
JPS53675B2 (en:Method) 1978-01-11
FR2176129B3 (en:Method) 1976-03-12
AU5334173A (en) 1974-09-19

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PE20 Patent expired after termination of 20 years

Effective date: 19930315